ES2048734T3 - Elaboracion de obleas semiconductoras. - Google Patents

Elaboracion de obleas semiconductoras.

Info

Publication number
ES2048734T3
ES2048734T3 ES87303454T ES87303454T ES2048734T3 ES 2048734 T3 ES2048734 T3 ES 2048734T3 ES 87303454 T ES87303454 T ES 87303454T ES 87303454 T ES87303454 T ES 87303454T ES 2048734 T3 ES2048734 T3 ES 2048734T3
Authority
ES
Spain
Prior art keywords
semiconductor
elaboration
waves
sleeve
curved surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES87303454T
Other languages
English (en)
Inventor
Martin Feldman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of ES2048734T3 publication Critical patent/ES2048734T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49998—Work holding

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Electron Beam Exposure (AREA)

Abstract

UN MANGUITO (10) PARA MANTENER UNA PIEZA (TAL COMO UNA LAMINA DE SEMICONDUCTOR) EN EL VACIO QUE COMPRENDE UNA SUPERFICIE CURVADA (13). EMPALMANDO LOS EJES DE LA PIEZA Y MANTENIENDO SU PARTE POSTERIOR CONTRA LA SUPERFICIE CURVADA LA PARTE FRONTAL DE LA MISMA PUEDE SER ESTABLECIDA EN UNA RELACION EQUIDISTANTE PRECISA CON RESPECTO A LA SUPERFICIE DE REFERENCIA. ESTE MANGUITO ES ADECUADO PARA MANTENER LAMINAS QUE VAN A SER LITOGRAFIADAS EN ALTA RESOLUCION POR UN HAZ DE ELECTRONES, UNA HAZ DE IONES O UN HAZ DE RAYOS X.
ES87303454T 1986-04-28 1987-04-21 Elaboracion de obleas semiconductoras. Expired - Lifetime ES2048734T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/856,175 US4724222A (en) 1986-04-28 1986-04-28 Wafer chuck comprising a curved reference surface

Publications (1)

Publication Number Publication Date
ES2048734T3 true ES2048734T3 (es) 1994-04-01

Family

ID=25323001

Family Applications (1)

Application Number Title Priority Date Filing Date
ES87303454T Expired - Lifetime ES2048734T3 (es) 1986-04-28 1987-04-21 Elaboracion de obleas semiconductoras.

Country Status (6)

Country Link
US (1) US4724222A (es)
EP (1) EP0244137B1 (es)
JP (1) JPS62260326A (es)
CA (1) CA1255814A (es)
DE (1) DE3789069T2 (es)
ES (1) ES2048734T3 (es)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3639346A1 (de) * 1986-11-18 1988-05-26 Siemens Ag Verfahren und anordnung zur aenderung des abbildungsmassstabes in der roentgenlithografie
US4982153A (en) * 1989-02-06 1991-01-01 Cray Research, Inc. Method and apparatus for cooling an integrated circuit chip during testing
US5147828A (en) * 1989-12-14 1992-09-15 Applied Materials, Inc. Method of handling magnetic semiconductor wafers
US5224581A (en) * 1989-12-14 1993-07-06 Applied Materials, Inc. Magnetic semiconductor wafers with handling apparatus and method
US5029418A (en) * 1990-03-05 1991-07-09 Eastman Kodak Company Sawing method for substrate cutting operations
JPH06216060A (ja) * 1993-01-12 1994-08-05 Tokyo Electron Ltd 真空処理方法
JPH08130207A (ja) * 1994-10-31 1996-05-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
DE69610821T2 (de) * 1995-02-10 2001-06-07 Advanced Micro Devices, Inc. Chemisch-mechanisch polieren mit gebogenen traegern
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US5905566A (en) * 1997-04-10 1999-05-18 International Business Machines Corporation Laser ablation top surface reference chuck
WO2000055686A1 (en) * 1997-05-21 2000-09-21 Joseph Lyons Passive shaped chuck for correcting field curvature
JPH1174164A (ja) 1997-08-27 1999-03-16 Canon Inc 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法
JP3406488B2 (ja) * 1997-09-05 2003-05-12 東京エレクトロン株式会社 真空処理装置
US6207006B1 (en) 1997-09-18 2001-03-27 Tokyo Electron Limited Vacuum processing apparatus
US6030275A (en) * 1998-03-17 2000-02-29 International Business Machines Corporation Variable control of carrier curvature with direct feedback loop
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
SG142150A1 (en) * 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
KR100827741B1 (ko) * 2000-07-17 2008-05-07 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피 공정을 위한 자동 유체 분배 방법 및시스템
US20050160011A1 (en) * 2004-01-20 2005-07-21 Molecular Imprints, Inc. Method for concurrently employing differing materials to form a layer on a substrate
JP2004505273A (ja) * 2000-08-01 2004-02-19 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 転写リソグラフィのための透明テンプレートと基板の間のギャップおよび配向を高精度でセンシングするための方法
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
CN100365507C (zh) * 2000-10-12 2008-01-30 德克萨斯州大学系统董事会 用于室温下低压微刻痕和毫微刻痕光刻的模板
US6513796B2 (en) 2001-02-23 2003-02-04 International Business Machines Corporation Wafer chuck having a removable insert
TW558861B (en) * 2001-06-15 2003-10-21 Semiconductor Energy Lab Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US7641840B2 (en) * 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
AU2003300865A1 (en) * 2002-12-13 2004-07-09 Molecular Imprints, Inc. Magnification corrections employing out-of-plane distortions on a substrate
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7122079B2 (en) * 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20070131563A1 (en) * 2003-04-14 2007-06-14 Asm Nutool, Inc. Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface
US6805054B1 (en) 2003-05-14 2004-10-19 Molecular Imprints, Inc. Method, system and holder for transferring templates during imprint lithography processes
ATE487579T1 (de) * 2003-05-14 2010-11-15 Molecular Imprints Inc Verfahren, system, halter und anordnung zur übertragung von templates bei imprint- lithographieverfahren
US6951173B1 (en) * 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) * 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US7301623B1 (en) * 2003-12-16 2007-11-27 Nanometrics Incorporated Transferring, buffering and measuring a substrate in a metrology system
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US20050189676A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
US7906180B2 (en) * 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
WO2009041373A1 (ja) 2007-09-28 2009-04-02 Toray Industries, Inc. 微細形状転写シートの製造方法及び製造装置
TWI437672B (zh) 2011-12-16 2014-05-11 印能科技股份有限公司 利用氣體充壓以抑制載板翹曲的載板固定方法
KR20180021914A (ko) * 2015-07-21 2018-03-05 코닝 인코포레이티드 유리 기판의 에지 마감을 위한 방법 및 장치
KR102507283B1 (ko) 2015-12-22 2023-03-07 삼성전자주식회사 기판 척 및 이를 포함하는 기판 접합 시스템
JP7114269B2 (ja) * 2018-02-23 2022-08-08 三菱重工業株式会社 被加工物の支持装置及び被加工物の支持方法
US12601057B2 (en) * 2021-12-11 2026-04-14 Lam Research Corporation Soaking and ESC clamping sequence for high bow substrates

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875416A (en) * 1970-06-30 1975-04-01 Texas Instruments Inc Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby
US3920233A (en) * 1974-06-11 1975-11-18 Ibm Spherical support and translation device for wafers
JPS51140577A (en) * 1975-05-30 1976-12-03 Fujitsu Ltd Wafer holder for electronic beam exposing device
US4213698A (en) * 1978-12-01 1980-07-22 Bell Telephone Laboratories, Incorporated Apparatus and method for holding and planarizing thin workpieces
USRE31053E (en) * 1978-01-23 1982-10-12 Bell Telephone Laboratories, Incorporated Apparatus and method for holding and planarizing thin workpieces
JPS5621321A (en) * 1979-07-27 1981-02-27 Fujitsu Ltd Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus
US4310743A (en) * 1979-09-24 1982-01-12 Hughes Aircraft Company Ion beam lithography process and apparatus using step-and-repeat exposure
JPS5792831A (en) * 1980-11-29 1982-06-09 Toshiba Corp Exposure to charged beam
JPS57204547A (en) * 1981-06-12 1982-12-15 Hitachi Ltd Exposing method
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
US4517465A (en) * 1983-03-29 1985-05-14 Veeco/Ai, Inc. Ion implantation control system
US4603466A (en) * 1984-02-17 1986-08-05 Gca Corporation Wafer chuck

Also Published As

Publication number Publication date
US4724222A (en) 1988-02-09
DE3789069T2 (de) 1994-05-19
EP0244137A3 (en) 1989-05-03
DE3789069D1 (de) 1994-03-24
JPS62260326A (ja) 1987-11-12
EP0244137A2 (en) 1987-11-04
EP0244137B1 (en) 1994-02-16
CA1255814A (en) 1989-06-13

Similar Documents

Publication Publication Date Title
ES2048734T3 (es) Elaboracion de obleas semiconductoras.
IL132351A (en) High resolution x-ray imaging of very small objects
ES2044126T3 (es) Panel de atenuacion del ruido.
ES8406547A1 (es) Un metodo de preparacion de un derivado de monofosfato de guaminas antiviricas.(como divisional de la patente numero 515.193)
ATE45246T1 (de) Vorrichtung zur roentgenbestrahlung.
ES2021164T5 (es) Aparato para realizar micro-abrasiones en tejido humano.
PE991A1 (es) Compensacion cromatica y de delineacion en un sistema de barrido de rayos laser de haces multiples
ES2018175T5 (es) Aspirador.
EP1041444A3 (en) Apparatus and method for manufacturing a semiconductor device
ES2064748T3 (es) Composiciones antiviricas conteniendo derivados del sulfoquinovosil glicerol y analogos del mismo y su uso.
ES483116A1 (es) Procedimiento para la preparacion de derivados de acidos aziridin-2-carboxilicos substituidos en n, inmunoestimulan- tes
JPS54162452A (en) Manufacture of semiconductor and its unit
KR890008901A (ko) 표시장치
JPS5293264A (en) Cathode of electrolytic radiation
JPS54111296A (en) X ray generating device
JPS526589A (en) Monochrometor
JPS52101965A (en) Device for generating electron beam in crt
JPS52101964A (en) Device for generating electron beam in crt
JPS53126960A (en) Radiation thickness gauge
Gorbunov¹ A. Artamonov¹, V. Barassi², S. Buontempo², V. Epstein¹, A. Ereditato², G. Fiorillo², F. Garufi²
JMMP et al. A small hollow cathode arc as an optical line source
JPS51147097A (en) Laser processing method
ES2054319T3 (es) Aparato para manipular haces de laser, particularmente haces de laser de potencia para uso por robots.
JPS5766633A (en) Pattern formation of fine processing resist
Arata et al. Development and Application of Strong Focusing Electron Beam Gun With Multi-Stage Electromagnetic Accelerating Units.--I

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 244137

Country of ref document: ES