ES2064524T3 - Dispositivo semiconductor de alto voltaje y proceso de fabricacion. - Google Patents

Dispositivo semiconductor de alto voltaje y proceso de fabricacion.

Info

Publication number
ES2064524T3
ES2064524T3 ES90109951T ES90109951T ES2064524T3 ES 2064524 T3 ES2064524 T3 ES 2064524T3 ES 90109951 T ES90109951 T ES 90109951T ES 90109951 T ES90109951 T ES 90109951T ES 2064524 T3 ES2064524 T3 ES 2064524T3
Authority
ES
Spain
Prior art keywords
layer
doped
high voltage
zone
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90109951T
Other languages
English (en)
Inventor
Denis Jaume
Georges Charitat
Lavigne Andre Peyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freescale Semiconducteurs France SAS
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Application granted granted Critical
Publication of ES2064524T3 publication Critical patent/ES2064524T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)

Abstract

ESTE INVENTO SE REFIERE A UN DISPOSITIVO SEMICONDUCTOR DE ALTA TENSION QUE COMPRENDE: UN SUBSTRATO 44; UNA ZONA EPITAXIAL 46 SOBRE DICHO SUBSTRATO QUE INCLUYE UNA ZONA DE ELECTRODOS DOPADA, 48 Y UNA ZONA DE AISLAMIENTO DOPADA, 50, ESTANDO SEPARADAS DICHA ZONA DE ELECTRODOS DOPADA Y DICHA ZONA DOPADA DE AISLAMIENTO POR UN PRIMER TRECHO 54; UNA CAPA DE AISLAMIENTO 56 SOBRE PARTE DE DICHA ZONA EPITAXIAL ENTRE DICHA ZONA DE AISLAMIENTO DOPADA Y DICHA ZONA DE ELECTRODOS DOPADA, CUBRIENDO DICHA CAPA DE AISLAMIENTO UNA PARTE DEL EXTREMO DE DICHA ZONA DOPADA DE ELECTRODOS; UNA PRIMERA CAPA SEMICONDUCTORA POLICRISTALINA 60 SOBRE DICHA CAPA DE AISLAMIENTO; Y UNA CAPA DE METALIZACION 68, 74, CARACTERIZANDOSE DICHO DISPOSITIVO SEMICONDUCTOR DE ALTA TENSION POR: UNA SEGUNDA CAPA SEMICONDUCTORA POLICRISTALINA 40 SOBRE DICHA PRIMERA CAPA SEMICONDUCTORA POLICRISTALINA. TAMBIEN SE DESCRIBE UN PROCEDIMIENTO PARA FABRICAR UN DISPOSITIVO SEMICONDUCTOR DE ALTA TENSION
ES90109951T 1989-07-21 1990-05-25 Dispositivo semiconductor de alto voltaje y proceso de fabricacion. Expired - Lifetime ES2064524T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8909897A FR2650122B1 (fr) 1989-07-21 1989-07-21 Dispositif semi-conducteur a haute tension et son procede de fabrication

Publications (1)

Publication Number Publication Date
ES2064524T3 true ES2064524T3 (es) 1995-02-01

Family

ID=9384046

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90109951T Expired - Lifetime ES2064524T3 (es) 1989-07-21 1990-05-25 Dispositivo semiconductor de alto voltaje y proceso de fabricacion.

Country Status (9)

Country Link
US (1) US5060047A (es)
EP (1) EP0408868B1 (es)
JP (1) JP2580850B2 (es)
KR (1) KR940002768B1 (es)
CA (1) CA2021671C (es)
DE (1) DE69014454T2 (es)
ES (1) ES2064524T3 (es)
FR (1) FR2650122B1 (es)
MY (1) MY105940A (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666174B1 (fr) * 1990-08-21 1997-03-21 Sgs Thomson Microelectronics Composant semiconducteur haute tension a faible courant de fuite.
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
JPH0799307A (ja) * 1993-09-29 1995-04-11 Fuji Electric Co Ltd 半導体装置およびその製造方法
US6489213B1 (en) * 1996-01-05 2002-12-03 Integrated Device Technology, Inc. Method for manufacturing semiconductor device containing a silicon-rich layer
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation
KR19990024988A (ko) * 1997-09-09 1999-04-06 윤종용 반절연 폴리실리콘막을 이용한 전력 반도체장치의 제조방법
KR100297703B1 (ko) 1998-02-24 2001-08-07 김덕중 반절연폴리실리콘(sipos)을이용한전력반도체장치및그제조방법
EP0977264B1 (en) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Semiconductor structure for driver circuits with level shifting
KR100343151B1 (ko) 1999-10-28 2002-07-05 김덕중 Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법
JP2007507877A (ja) * 2003-09-30 2007-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 絶縁された金属領域を備えたフィールドプレートを有する横方向薄膜ｓｏｉデバイス
US7820473B2 (en) * 2005-03-21 2010-10-26 Semiconductor Components Industries, Llc Schottky diode and method of manufacture
US7279390B2 (en) * 2005-03-21 2007-10-09 Semiconductor Components Industries, L.L.C. Schottky diode and method of manufacture
US7821095B2 (en) * 2006-07-14 2010-10-26 Semiconductor Components Industries, Llc Method of forming a Schottky diode and structure therefor
US8884378B2 (en) 2010-11-03 2014-11-11 Infineon Technologies Ag Semiconductor device and a method for manufacturing a semiconductor device
CN103021801B (zh) * 2011-09-22 2015-07-15 北大方正集团有限公司 掺氧半绝缘多晶硅膜及其制作方法
CN106783608B (zh) * 2016-12-22 2019-10-25 株洲中车时代电气股份有限公司 一种终端结构及其制作方法和功率半导体器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979782A (es) * 1972-12-08 1974-08-01
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
JPS56131954A (en) * 1980-03-19 1981-10-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS577959A (en) * 1980-06-19 1982-01-16 Toshiba Corp Semiconductor device
JPS5853860A (ja) * 1981-09-26 1983-03-30 Toshiba Corp 高耐圧プレ−ナ型半導体装置
JPS5934638A (ja) * 1982-08-20 1984-02-25 Matsushita Electronics Corp 半導体装置
US4583106A (en) * 1983-08-04 1986-04-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
US4647958A (en) * 1984-04-16 1987-03-03 Trw Inc. Bipolar transistor construction
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
JPS63184364A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の製造方法
USH665H (en) * 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices

Also Published As

Publication number Publication date
US5060047A (en) 1991-10-22
FR2650122A1 (fr) 1991-01-25
KR940002768B1 (ko) 1994-04-02
JPH0358429A (ja) 1991-03-13
KR910003829A (ko) 1991-02-28
FR2650122B1 (fr) 1991-11-08
CA2021671A1 (en) 1991-01-22
DE69014454T2 (de) 1995-06-22
CA2021671C (en) 1993-11-02
EP0408868B1 (en) 1994-11-30
EP0408868A3 (en) 1991-03-20
MY105940A (en) 1995-02-28
DE69014454D1 (de) 1995-01-12
JP2580850B2 (ja) 1997-02-12
EP0408868A2 (en) 1991-01-23

Similar Documents

Publication Publication Date Title
ES2064524T3 (es) Dispositivo semiconductor de alto voltaje y proceso de fabricacion.
KR940020594A (ko) 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법
KR960701479A (ko) 매립된 다이오드가 있는 래터럴 반도체-온-절연체 반도체 디바이스(Lateral semiconductor-on-insulator (soi)semiconductor device having a buried diode)
TW335513B (en) Semiconductor component for high voltage
EP0510604A3 (en) Semiconductor device and method of manufacturing the same
KR890003038A (ko) 페데스탈 구조를 가지는 반도체 제조 공정
KR910001993A (ko) 반도체장치의 제조방법
KR900003030B1 (en) Programmable device for semiconductor integrated cricuit
KR970052023A (ko) 에스 오 아이 소자 및 그의 제조방법
ES8705705A1 (es) Perfeccionamientos en dispositivos semiconductores para aisladores.
KR910019260A (ko) 반도체장치및 그의 제조방법
EP0311419A3 (en) Semiconductor device having bipolar transistor and method of producing the same
SE8007199L (sv) Zener-diod
EP4307384A3 (en) Power mosfet device with improved isolated gate structure and manufacturing process thereof
ATE371955T1 (de) Igbt mit pn-isolation
ES2076468T3 (es) Dispositivo semiconductor que tiene un transistor mejorado con puerta aislada.
US2773224A (en) Transistor point contact arrangement
KR880009426A (ko) 반도체 메모리장치 및 그 제조방법
JPS6451662A (en) Semiconductor device and its manufacture
EP0335632A3 (en) High current thin film transistor
TW353191B (en) Semiconductor device and process for producing the same
JPS6489372A (en) Semiconductor device
EP0377871A3 (en) Self-aligned window at recessed intersection of insulating regions
KR880010508A (ko) 반도체장치와 그 제조방법
KR950004547A (ko) 반도체 소자의 제조방법

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 408868

Country of ref document: ES