ES2096768T3 - Aparato para tratamientos rapidos con plasma y metodo. - Google Patents
Aparato para tratamientos rapidos con plasma y metodo.Info
- Publication number
- ES2096768T3 ES2096768T3 ES92919953T ES92919953T ES2096768T3 ES 2096768 T3 ES2096768 T3 ES 2096768T3 ES 92919953 T ES92919953 T ES 92919953T ES 92919953 T ES92919953 T ES 92919953T ES 2096768 T3 ES2096768 T3 ES 2096768T3
- Authority
- ES
- Spain
- Prior art keywords
- plasma
- distance
- treatments
- confined
- coating surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/47—Generating plasma using corona discharges
- H05H1/473—Cylindrical electrodes, e.g. rotary drums
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
- H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Auxiliary Devices For And Details Of Packaging Control (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemically Coating (AREA)
- Treatment Of Fiber Materials (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Electrotherapy Devices (AREA)
Abstract
UN APARATO DE TRATAMIENTO DE PLASMA ES UTIL PARA REVESTIR SUBSTRATOS CON PELICULAS FINAS QUE TIENEN UNAS PROPIEDADES DE BARRERA DE VAPOR PARA PROPORCIONES DE DEPOSICION RELATIVAMENTE RAPIDAS. EL APARATO COMPRENDE UNA CAMARA EVACUABLE, UN ELECTRODO CARGADO ELECTRICAMENTE QUE DEFINE UNA SUPERFICIE DE REVESTIMIENTO DE PLASMA DENTRO DE LA CAMARA, Y UN BLINDAJE ESPACIADO UNA DISTANCIA DELTA TRANSVERSAL A LA SUPERFICIE DE REVESTIMIENTO DE PLASMA. DURANTE LOS TRATAMIENTOS DE PLASMA, EL PLASMA SE CONFINA DENTRO DE UNA DISTANCIA DELTA MIENTRAS UN SUBSTRATO SE DESPLAZA A TRAVES DEL PLASMA CONFINADO.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/767,146 US5224441A (en) | 1991-09-27 | 1991-09-27 | Apparatus for rapid plasma treatments and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2096768T3 true ES2096768T3 (es) | 1997-03-16 |
Family
ID=25078620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES92919953T Expired - Lifetime ES2096768T3 (es) | 1991-09-27 | 1992-09-11 | Aparato para tratamientos rapidos con plasma y metodo. |
Country Status (21)
| Country | Link |
|---|---|
| US (2) | US5224441A (es) |
| EP (1) | EP0605534B1 (es) |
| JP (1) | JP3155278B2 (es) |
| KR (1) | KR100294932B1 (es) |
| CN (2) | CN1036079C (es) |
| AT (1) | ATE148507T1 (es) |
| AU (1) | AU666675B2 (es) |
| CA (1) | CA2119561C (es) |
| DE (1) | DE69217233T2 (es) |
| DK (1) | DK0605534T3 (es) |
| ES (1) | ES2096768T3 (es) |
| FI (1) | FI941439A7 (es) |
| ID (1) | ID1054B (es) |
| IL (1) | IL102831A (es) |
| MX (1) | MX9205420A (es) |
| MY (1) | MY110816A (es) |
| NO (1) | NO941075D0 (es) |
| NZ (1) | NZ244055A (es) |
| PT (1) | PT100880B (es) |
| WO (1) | WO1993006258A1 (es) |
| ZA (1) | ZA926102B (es) |
Families Citing this family (134)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3101330B2 (ja) * | 1991-01-23 | 2000-10-23 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
| US5670224A (en) * | 1992-11-13 | 1997-09-23 | Energy Conversion Devices, Inc. | Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates |
| JPH06280026A (ja) * | 1993-03-24 | 1994-10-04 | Semiconductor Energy Lab Co Ltd | 成膜装置及び成膜方法 |
| FR2703073B1 (fr) * | 1993-03-26 | 1995-05-05 | Lorraine Laminage | Procédé et dispositif pour le revêtement en continu d'un matériau métallique en défilement par un dépôt de polymère à gradient de composition, et produit obtenu par ce procédé. |
| FR2704558B1 (fr) * | 1993-04-29 | 1995-06-23 | Air Liquide | Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement. |
| US6835523B1 (en) * | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| CH685755A5 (de) * | 1993-06-03 | 1995-09-29 | Tetra Pak Suisse Sa | Verfahren zur Herstellung eines Schichtstoffes. |
| US6183816B1 (en) | 1993-07-20 | 2001-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the coating |
| US5534066A (en) * | 1993-10-29 | 1996-07-09 | International Business Machines Corporation | Fluid delivery apparatus having an infrared feedline sensor |
| US5803976A (en) * | 1993-11-09 | 1998-09-08 | Imperial Chemical Industries Plc | Vacuum web coating |
| CH687614A5 (de) * | 1994-02-04 | 1997-01-15 | Tetra Pak Suisse Sa | Verfahren zum Versehen einer Verpackung mit hervorragenden Sperreigenschaften in bezug auf Gase. |
| CH687601A5 (de) * | 1994-02-04 | 1997-01-15 | Tetra Pak Suisse Sa | Verfahren zur Herstellung von im Innern sterilen Verpackungen mit hervorragenden Sperreigenschaften. |
| DE4404690A1 (de) * | 1994-02-15 | 1995-08-17 | Leybold Ag | Verfahren zur Erzeugung von Sperrschichten für Gase und Dämpfe auf Kunststoff-Substraten |
| DE69519228T2 (de) * | 1994-05-13 | 2001-02-22 | Novex, San Diego | Vorrichtung mit einer beschichteten Kunststoffgiessform für elektroforetisches Gel |
| US6146724A (en) * | 1994-06-06 | 2000-11-14 | The University Of Tennessee Research Corporation | One atmosphere uniform glow discharge plasma coating with gas barrier properties |
| US5558843A (en) * | 1994-09-01 | 1996-09-24 | Eastman Kodak Company | Near atmospheric pressure treatment of polymers using helium discharges |
| WO1996009537A1 (en) * | 1994-09-19 | 1996-03-28 | Novel Experimental Technology | Plastic mold for electrophoresis gel |
| DE19523444A1 (de) * | 1995-06-28 | 1997-01-02 | Antec Angewandte Neue Technolo | Verfahren zur Beschichtung von Kunststoffen oder ähnlichen weichen Werkstoffen |
| US5728224A (en) * | 1995-09-13 | 1998-03-17 | Tetra Laval Holdings & Finance S.A. | Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate |
| DE19538176A1 (de) * | 1995-10-13 | 1997-04-17 | Arcotec Oberflaechentech Gmbh | Vorrichtung zur Behandlung flächiger Substrate mit einer Koronastation |
| US5968324A (en) * | 1995-12-05 | 1999-10-19 | Applied Materials, Inc. | Method and apparatus for depositing antireflective coating |
| TW303480B (en) | 1996-01-24 | 1997-04-21 | Applied Materials Inc | Magnetically confined plasma reactor for processing a semiconductor wafer |
| US6116185A (en) * | 1996-05-01 | 2000-09-12 | Rietzel; James G. | Gas injector for plasma enhanced chemical vapor deposition |
| US5743966A (en) * | 1996-05-31 | 1998-04-28 | The Boc Group, Inc. | Unwinding of plastic film in the presence of a plasma |
| US6110540A (en) * | 1996-07-12 | 2000-08-29 | The Boc Group, Inc. | Plasma apparatus and method |
| KR100296692B1 (ko) | 1996-09-10 | 2001-10-24 | 사토 도리 | 플라즈마cvd장치 |
| US6112695A (en) | 1996-10-08 | 2000-09-05 | Nano Scale Surface Systems, Inc. | Apparatus for plasma deposition of a thin film onto the interior surface of a container |
| US5948166A (en) * | 1996-11-05 | 1999-09-07 | 3M Innovative Properties Company | Process and apparatus for depositing a carbon-rich coating on a moving substrate |
| US5888594A (en) * | 1996-11-05 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Process for depositing a carbon-rich coating on a moving substrate |
| US5829353A (en) * | 1997-06-18 | 1998-11-03 | Presstek, Inc. | Method of modulating lithographic affinity and printing members made thereby |
| US6106659A (en) * | 1997-07-14 | 2000-08-22 | The University Of Tennessee Research Corporation | Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials |
| US6083355A (en) * | 1997-07-14 | 2000-07-04 | The University Of Tennessee Research Corporation | Electrodes for plasma treater systems |
| JP3906325B2 (ja) * | 1997-10-09 | 2007-04-18 | テトラ ラバル ホールデイングス アンド ファイナンス エス エイ | 気体及び芳香バリア特性を備える包装積層体 |
| DE19802506A1 (de) * | 1998-01-23 | 1999-07-29 | Leybold Systems Gmbh | Metallhaltige Barriereschicht für Verpackungsmaterial und Verfahren zur Herstellung einer metallhaltigen Barriereschicht für Verpackungsmaterial |
| US6627532B1 (en) * | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
| US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
| US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
| US6593247B1 (en) | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
| US6660656B2 (en) | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
| US6287990B1 (en) | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
| US6159871A (en) | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
| US6667553B2 (en) | 1998-05-29 | 2003-12-23 | Dow Corning Corporation | H:SiOC coated substrates |
| US6082292A (en) * | 1999-01-05 | 2000-07-04 | Wisconsin Alumni Research Foundation | Sealing roller system for surface treatment gas reactors |
| SE520491C2 (sv) | 1999-04-07 | 2003-07-15 | Tetra Laval Holdings & Finance | Förpackningslaminat med barriäregenskaper mot gas och aromämnen |
| DE19927540A1 (de) | 1999-06-16 | 2000-12-21 | Ct Therm Elek Sche Anlagen Gmb | Abgasreinigungssystem |
| US6149985A (en) | 1999-07-07 | 2000-11-21 | Eastman Kodak Company | High-efficiency plasma treatment of imaging supports |
| US6399489B1 (en) | 1999-11-01 | 2002-06-04 | Applied Materials, Inc. | Barrier layer deposition using HDP-CVD |
| JP4841023B2 (ja) * | 2000-02-10 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 成膜装置及び太陽電池の作製方法 |
| US6863835B1 (en) | 2000-04-25 | 2005-03-08 | James D. Carducci | Magnetic barrier for plasma in chamber exhaust |
| US6603121B2 (en) | 2000-05-19 | 2003-08-05 | Eastman Kodak Company | High-efficiency plasma treatment of paper |
| JP4382265B2 (ja) * | 2000-07-12 | 2009-12-09 | 日本電気株式会社 | 酸化シリコン膜の形成方法及びその形成装置 |
| EP1401731A2 (en) * | 2000-11-29 | 2004-03-31 | American Aerogel Corporation | Insulated barriers and methods for producing same |
| US7025856B2 (en) * | 2001-02-02 | 2006-04-11 | The Regents Of The University Of California | Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge |
| US6802315B2 (en) | 2001-03-21 | 2004-10-12 | Hollingsorth & Vose Company | Vapor deposition treated electret filter media |
| US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
| US7294283B2 (en) * | 2001-04-20 | 2007-11-13 | Applied Process Technologies, Inc. | Penning discharge plasma source |
| WO2002086932A1 (en) | 2001-04-20 | 2002-10-31 | Applied Process Technologies | Magnetic mirror plasma source |
| US7023128B2 (en) * | 2001-04-20 | 2006-04-04 | Applied Process Technologies, Inc. | Dipole ion source |
| JP2002322558A (ja) * | 2001-04-25 | 2002-11-08 | Konica Corp | 薄膜形成方法、光学フィルム、偏光板及び画像表示装置 |
| US6926926B2 (en) * | 2001-09-10 | 2005-08-09 | Applied Materials, Inc. | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias |
| US6759327B2 (en) | 2001-10-09 | 2004-07-06 | Applied Materials Inc. | Method of depositing low k barrier layers |
| US6838393B2 (en) * | 2001-12-14 | 2005-01-04 | Applied Materials, Inc. | Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide |
| US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
| US7091137B2 (en) * | 2001-12-14 | 2006-08-15 | Applied Materials | Bi-layer approach for a hermetic low dielectric constant layer for barrier applications |
| US6878419B2 (en) * | 2001-12-14 | 2005-04-12 | 3M Innovative Properties Co. | Plasma treatment of porous materials |
| EP1540714A4 (en) * | 2002-08-26 | 2007-11-14 | Sigma Lab Arizona Inc | BARRIER COATING PRODUCED BY LUMINESCENT DISCHARGE AT ATMOSPHERIC PRESSURE |
| CH696013A5 (de) | 2002-10-03 | 2006-11-15 | Tetra Laval Holdings & Finance | Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess. |
| CH707466B1 (de) * | 2002-10-03 | 2014-07-15 | Tetra Laval Holdings & Finance | Vorrichtung zur Durchführung eines Plasma-unterstützten Prozesses. |
| US7749563B2 (en) * | 2002-10-07 | 2010-07-06 | Applied Materials, Inc. | Two-layer film for next generation damascene barrier application with good oxidation resistance |
| US7208389B1 (en) * | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
| WO2005028697A1 (en) | 2003-09-12 | 2005-03-31 | Applied Process Technologies, Inc. | Magnetic mirror plasma source and method using same |
| JP4581366B2 (ja) * | 2003-10-03 | 2010-11-17 | コニカミノルタオプト株式会社 | 放電プラズマ処理方法 |
| US20050172897A1 (en) * | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
| US7030041B2 (en) | 2004-03-15 | 2006-04-18 | Applied Materials Inc. | Adhesion improvement for low k dielectrics |
| US7229911B2 (en) | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
| JP4608944B2 (ja) * | 2004-05-21 | 2011-01-12 | ソニー株式会社 | 成膜装置及び成膜方法 |
| US20050277302A1 (en) * | 2004-05-28 | 2005-12-15 | Nguyen Son V | Advanced low dielectric constant barrier layers |
| US7229041B2 (en) * | 2004-06-30 | 2007-06-12 | Ohio Central Steel Company | Lifting lid crusher |
| US7288205B2 (en) | 2004-07-09 | 2007-10-30 | Applied Materials, Inc. | Hermetic low dielectric constant layer for barrier applications |
| KR20070072900A (ko) * | 2004-10-29 | 2007-07-06 | 다우 글로벌 테크놀로지스 인크. | 플라즈마 강화 화학 기상 증착에 의한 내마모성 코팅 |
| WO2006049865A1 (en) * | 2004-10-29 | 2006-05-11 | Dow Global Technologies Inc. | Improved deposition rate plasma enhanced chemical vapor process |
| US7166531B1 (en) | 2005-01-31 | 2007-01-23 | Novellus Systems, Inc. | VLSI fabrication processes for introducing pores into dielectric materials |
| US8016894B2 (en) * | 2005-12-22 | 2011-09-13 | Apjet, Inc. | Side-specific treatment of textiles using plasmas |
| US7626135B2 (en) | 2006-05-10 | 2009-12-01 | Sub-One Technology, Inc. | Electrode systems and methods of using electrodes |
| JP4811108B2 (ja) * | 2006-05-10 | 2011-11-09 | 住友電気工業株式会社 | 被覆層の厚み計量機構およびそれを用いた被覆層形成装置 |
| US7838793B2 (en) * | 2006-07-21 | 2010-11-23 | Sub-One Technology, Inc. | System and method for treating surfaces of components |
| JP5093113B2 (ja) * | 2006-11-02 | 2012-12-05 | 旭硝子株式会社 | エチレン−テトラフルオロエチレン系共重合体成形品およびその製造方法 |
| KR20090126273A (ko) * | 2007-03-28 | 2009-12-08 | 다우 코닝 코포레이션 | 실리콘 및 탄소를 함유하는 장벽층의 롤투롤 플라즈마 화학 기상 증착법 |
| CN101641400B (zh) | 2007-04-04 | 2014-09-10 | 利乐拉瓦尔集团及财务有限公司 | 包装层压板,制造该包装层压板的方法和由其生产的包装容器 |
| JP4870615B2 (ja) * | 2007-04-25 | 2012-02-08 | 株式会社アルバック | プラズマcvd成膜装置およびプラズマcvd成膜方法 |
| JP4558810B2 (ja) * | 2008-02-29 | 2010-10-06 | 富士フイルム株式会社 | 成膜装置 |
| JP4999737B2 (ja) * | 2008-03-14 | 2012-08-15 | 富士フイルム株式会社 | 成膜装置 |
| US9481927B2 (en) * | 2008-06-30 | 2016-11-01 | 3M Innovative Properties Company | Method of making inorganic or inorganic/organic hybrid barrier films |
| JP5156552B2 (ja) * | 2008-09-08 | 2013-03-06 | 富士フイルム株式会社 | ガスバリアフィルムの製造方法 |
| MX345403B (es) | 2009-05-13 | 2017-01-30 | Sio2 Medical Products Inc | Revestimiento por pecvd utilizando un precursor organosilícico. |
| US7985188B2 (en) * | 2009-05-13 | 2011-07-26 | Cv Holdings Llc | Vessel, coating, inspection and processing apparatus |
| US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| EP2473650A4 (en) * | 2009-09-05 | 2015-09-02 | Gen Plasma Inc | DEVICE FOR PLASMA-BASED CHEMICAL STEAM STORAGE |
| JP5270505B2 (ja) | 2009-10-05 | 2013-08-21 | 株式会社神戸製鋼所 | プラズマcvd装置 |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
| EP2776603B1 (en) | 2011-11-11 | 2019-03-06 | SiO2 Medical Products, Inc. | PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| EP2799589B1 (en) * | 2011-12-28 | 2021-04-07 | Dai Nippon Printing Co., Ltd. | Vapor deposition method having pretreatment that uses plasma |
| JP5828770B2 (ja) | 2012-01-24 | 2015-12-09 | 株式会社神戸製鋼所 | 真空成膜装置 |
| JP2013204053A (ja) * | 2012-03-27 | 2013-10-07 | Ulvac Japan Ltd | 成膜装置 |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| CA2890066C (en) | 2012-11-01 | 2021-11-09 | Sio2 Medical Products, Inc. | Coating inspection method |
| US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
| JP2014122419A (ja) * | 2012-11-20 | 2014-07-03 | Kobe Steel Ltd | プラズマcvd装置 |
| KR102211950B1 (ko) | 2012-11-30 | 2021-02-04 | 에스아이오2 메디컬 프로덕츠, 인크. | 의료용 주사기 카트리지 등의 pecvd 증착 균일성 제어 |
| US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
| GB2510389B (en) * | 2013-02-01 | 2016-08-03 | Camvac Ltd | Apparatus and method for defining a plasma |
| US20140242367A1 (en) * | 2013-02-25 | 2014-08-28 | Au Optronics Corporation | Barrier film and methods of making same |
| US20160015898A1 (en) | 2013-03-01 | 2016-01-21 | Sio2 Medical Products, Inc. | Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
| US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
| US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
| US11066745B2 (en) | 2014-03-28 | 2021-07-20 | Sio2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
| CN108138316A (zh) | 2015-08-18 | 2018-06-08 | Sio2医药产品公司 | 具有低氧气传输速率的药物和其他包装 |
| DE102017204525A1 (de) | 2016-03-23 | 2017-09-28 | Basf Se | Verbundfolienlaminate für flexible Verpackungen |
| JP6388146B1 (ja) * | 2017-08-07 | 2018-09-12 | 春日電機株式会社 | 表面改質装置 |
| CN107523808B (zh) * | 2017-08-23 | 2019-05-10 | 江苏菲沃泰纳米科技有限公司 | 一种有机硅纳米防护涂层的制备方法 |
| US11389825B2 (en) | 2017-08-23 | 2022-07-19 | Jiangsu Favored Nanotechnology Co., LTD | Methods for preparing nano-protective coating with a modulation structure |
| CN107523809B (zh) * | 2017-08-23 | 2019-06-25 | 江苏菲沃泰纳米科技有限公司 | 一种有机硅硬质纳米防护涂层的制备方法 |
| CN107587119B (zh) * | 2017-08-23 | 2018-11-13 | 江苏菲沃泰纳米科技有限公司 | 一种复合结构高绝缘硬质纳米防护涂层的制备方法 |
| US11185883B2 (en) | 2017-08-23 | 2021-11-30 | Jiangsu Favored Nanotechnology Co., LTD | Methods for preparing nano-protective coating |
| US11170980B2 (en) | 2017-10-27 | 2021-11-09 | Corning Incorporated | Methods of treating a surface of a polymer material by atmospheric pressure plasma |
| CN108559974A (zh) * | 2017-12-25 | 2018-09-21 | 兰州空间技术物理研究所 | 一种基于弧形电极结构的pecvd镀膜设备 |
| CN108315722A (zh) * | 2017-12-25 | 2018-07-24 | 兰州空间技术物理研究所 | 一种弧形电极等离子体增强化学气相沉积装置 |
| GB201815842D0 (en) * | 2018-09-28 | 2018-11-14 | Power Roll Ltd | Method of processing substrate for an energy storage device |
| JP2024542372A (ja) * | 2021-10-26 | 2024-11-15 | アプライド マテリアルズ インコーポレイテッド | 薄膜基板を搬送するための真空処理システム、装置および方法 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5642054B2 (es) * | 1973-07-25 | 1981-10-02 | ||
| DE2900772C2 (de) * | 1979-01-10 | 1984-08-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Erzeugung von Schichten auf einer bandförmigen Trägerfolie |
| JPS5730733A (en) * | 1980-07-30 | 1982-02-19 | Shin Etsu Chem Co Ltd | Device for continuous plasma treatment |
| DE3175345D1 (en) * | 1980-08-21 | 1986-10-23 | Nat Res Dev | Coating insulating materials by glow discharge |
| US4384918A (en) * | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| US4741801A (en) * | 1981-07-17 | 1988-05-03 | Plasma Physics Corp. | Glow discharge method and apparatus and photoreceptor devices made therewith |
| US4462333A (en) * | 1982-10-27 | 1984-07-31 | Energy Conversion Devices, Inc. | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
| JPS5984516A (ja) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | 薄膜パタ−ンの連続形成装置 |
| JPS59124038A (ja) * | 1982-12-29 | 1984-07-18 | Matsushita Electric Ind Co Ltd | 磁気記録媒体の製造方法 |
| JPS59213735A (ja) * | 1983-05-18 | 1984-12-03 | Kuraray Co Ltd | プラズマ処理方法 |
| US4557946A (en) * | 1983-06-03 | 1985-12-10 | Edward Sacher | Moisture impermeability or organosilicone films |
| US4559112A (en) * | 1983-10-07 | 1985-12-17 | Nippon Telegraph & Telephone | Electrically conducting polymer film and method of manufacturing the same |
| JPS60226533A (ja) * | 1984-04-25 | 1985-11-11 | Hitachi Ltd | 連続式プラズマ処理装置 |
| JPH0244854B2 (ja) * | 1985-03-11 | 1990-10-05 | Hiraoka Shokusen | Shiitojobutsunopurazumashorisochi |
| US4626447A (en) * | 1985-03-18 | 1986-12-02 | Energy Conversion Devices, Inc. | Plasma confining apparatus |
| US4599678A (en) * | 1985-03-19 | 1986-07-08 | Wertheimer Michael R | Plasma-deposited capacitor dielectrics |
| DE3521318A1 (de) * | 1985-06-14 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung |
| JPH0734332B2 (ja) * | 1986-03-12 | 1995-04-12 | 株式会社ト−ビ | 透明導電性フイルムの製造方法 |
| JPS62274080A (ja) * | 1986-05-21 | 1987-11-28 | Hitachi Ltd | プラズマ処理方法 |
| US4842707A (en) * | 1986-06-23 | 1989-06-27 | Oki Electric Industry Co., Ltd. | Dry process apparatus |
| US4900625A (en) * | 1987-03-03 | 1990-02-13 | Kanebo, Ltd. | Deep-colored fibers and a process for manufacturing the same |
| US4920917A (en) * | 1987-03-18 | 1990-05-01 | Teijin Limited | Reactor for depositing a layer on a moving substrate |
| US4968918A (en) * | 1987-07-06 | 1990-11-06 | Kanebo, Ltd. | Apparatus for plasma treatment |
| ZA884511B (en) * | 1987-07-15 | 1989-03-29 | Boc Group Inc | Method of plasma enhanced silicon oxide deposition |
| US4847469A (en) * | 1987-07-15 | 1989-07-11 | The Boc Group, Inc. | Controlled flow vaporizer |
| WO1989003587A1 (fr) * | 1987-10-14 | 1989-04-20 | The Furukawa Electric Co., Ltd. | Procede et dispositif de formation de films minces par depot de vapeur chimique au plasma |
| JP2670623B2 (ja) * | 1988-09-19 | 1997-10-29 | アネルバ株式会社 | マイクロ波プラズマ処理装置 |
| JPH02267267A (ja) * | 1989-04-06 | 1990-11-01 | Tonen Corp | フィルムへの薄膜形成方法およびその装置 |
| JPH02281420A (ja) * | 1989-04-21 | 1990-11-19 | Matsushita Electric Ind Co Ltd | 金属薄膜型磁気記録媒体の保護膜製造方法およびその装置 |
| JPH0791645B2 (ja) * | 1989-04-28 | 1995-10-04 | 株式会社日立製作所 | 薄膜形成装置 |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| US5130170A (en) * | 1989-06-28 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation |
| JP2990608B2 (ja) * | 1989-12-13 | 1999-12-13 | 株式会社ブリヂストン | 表面処理方法 |
| JP2587507B2 (ja) * | 1989-12-13 | 1997-03-05 | 松下電器産業株式会社 | 薄膜製造装置 |
| WO1991017561A1 (en) * | 1990-05-10 | 1991-11-14 | Eastman Kodak Company | Apparatus for-plasma treatment of continuous material |
-
1991
- 1991-09-27 US US07/767,146 patent/US5224441A/en not_active Expired - Lifetime
-
1992
- 1992-08-13 ZA ZA926102A patent/ZA926102B/xx unknown
- 1992-08-17 IL IL10283192A patent/IL102831A/en not_active IP Right Cessation
- 1992-08-19 MY MYPI92001499A patent/MY110816A/en unknown
- 1992-08-21 NZ NZ244055A patent/NZ244055A/en unknown
- 1992-08-27 ID IDP463392A patent/ID1054B/id unknown
- 1992-09-11 CA CA002119561A patent/CA2119561C/en not_active Expired - Lifetime
- 1992-09-11 AU AU25724/92A patent/AU666675B2/en not_active Ceased
- 1992-09-11 AT AT92919953T patent/ATE148507T1/de not_active IP Right Cessation
- 1992-09-11 DK DK92919953.7T patent/DK0605534T3/da active
- 1992-09-11 ES ES92919953T patent/ES2096768T3/es not_active Expired - Lifetime
- 1992-09-11 FI FI941439A patent/FI941439A7/fi not_active Application Discontinuation
- 1992-09-11 WO PCT/US1992/007681 patent/WO1993006258A1/en not_active Ceased
- 1992-09-11 EP EP92919953A patent/EP0605534B1/en not_active Expired - Lifetime
- 1992-09-11 KR KR1019940700987A patent/KR100294932B1/ko not_active Expired - Fee Related
- 1992-09-11 JP JP50611893A patent/JP3155278B2/ja not_active Expired - Fee Related
- 1992-09-11 DE DE69217233T patent/DE69217233T2/de not_active Expired - Lifetime
- 1992-09-18 PT PT100880A patent/PT100880B/pt not_active IP Right Cessation
- 1992-09-23 MX MX9205420A patent/MX9205420A/es not_active IP Right Cessation
- 1992-09-26 CN CN92111259A patent/CN1036079C/zh not_active Expired - Fee Related
-
1993
- 1993-10-25 US US08/142,641 patent/US5364665A/en not_active Expired - Lifetime
-
1994
- 1994-03-24 NO NO941075A patent/NO941075D0/no unknown
-
1995
- 1995-10-10 CN CN95115696A patent/CN1054652C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993006258A1 (en) | 1993-04-01 |
| FI941439L (fi) | 1994-03-28 |
| CN1125267A (zh) | 1996-06-26 |
| US5364665A (en) | 1994-11-15 |
| CN1036079C (zh) | 1997-10-08 |
| AU2572492A (en) | 1993-04-27 |
| KR100294932B1 (ko) | 2001-09-17 |
| CA2119561C (en) | 2002-01-15 |
| EP0605534B1 (en) | 1997-01-29 |
| NO941075L (no) | 1994-03-24 |
| IL102831A (en) | 1996-11-14 |
| MY110816A (en) | 1999-05-31 |
| CN1072734A (zh) | 1993-06-02 |
| FI941439A0 (fi) | 1994-03-28 |
| DE69217233D1 (de) | 1997-03-13 |
| CA2119561A1 (en) | 1993-04-01 |
| JPH07502074A (ja) | 1995-03-02 |
| DK0605534T3 (da) | 1997-02-17 |
| IL102831A0 (en) | 1993-01-31 |
| NO941075D0 (no) | 1994-03-24 |
| PT100880B (pt) | 1999-07-30 |
| DE69217233T2 (de) | 1997-05-22 |
| AU666675B2 (en) | 1996-02-22 |
| JP3155278B2 (ja) | 2001-04-09 |
| ID1054B (id) | 1996-10-30 |
| ZA926102B (en) | 1993-03-02 |
| PT100880A (pt) | 1994-05-31 |
| US5224441A (en) | 1993-07-06 |
| FI941439A7 (fi) | 1994-03-28 |
| EP0605534A1 (en) | 1994-07-13 |
| MX9205420A (es) | 1993-03-01 |
| ATE148507T1 (de) | 1997-02-15 |
| CN1054652C (zh) | 2000-07-19 |
| NZ244055A (en) | 1995-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MX9205420A (es) | Aparato y metodo para tratamientos rapidos con plasma. | |
| DE3573806D1 (en) | Surface treatment process | |
| KR890013966A (ko) | 플라즈마 처리 방법 및 장치 | |
| KR950007032A (ko) | 반도체장치의 절연층 형성방법 및 그 형성장치 | |
| ES8303542A1 (es) | Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato. | |
| US4237183A (en) | Process for the surface treatment of a synthetic resin lens and the product thereof | |
| GB1039691A (en) | Vacuum coating and ion bombardment apparatus | |
| ES8700977A1 (es) | Un aparato para depositar una pelicula transmisora de luz y electricamente conductora en un sustrato | |
| JPS5730325A (en) | Manufacture of amorphous silicon thin film | |
| GB1073069A (en) | Process for producing a superconductor | |
| JPS57194254A (en) | Cathode for insulator target in rf sputtering | |
| AU2001256178A1 (en) | Method and device for coating substrates | |
| JPS5756036A (en) | Plasma chemical vapor phase reactor | |
| EP0095384A3 (en) | Vacuum deposition apparatus | |
| JPS5244174A (en) | Plasma treatment device | |
| RU94019330A (ru) | Способ и устройство плазменной обработки | |
| JPS5660021A (en) | Etching for semiconductor device | |
| KR102193005B1 (ko) | 가스 배리어 막, 가스 배리어 필름, 유기 일렉트로루미네센스 소자 및 전자 페이퍼, 그리고 가스 배리어 필름의 제조 방법 | |
| GB936691A (en) | Improvements in methods of coating a tape of electrically insulating material | |
| JPS57167630A (en) | Plasma vapor-phase growing device | |
| JPS5677379A (en) | Metal film depositing apparatus | |
| JPS573830A (en) | Vacuum metallizing method | |
| JPS5742139A (en) | Semiconductor device | |
| JPS6485172A (en) | Pretreatment for coating polypropylene product | |
| SU1802548A1 (ru) | Устройство для нанесения покрытий в вакууме |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
Ref document number: 605534 Country of ref document: ES |