ES2121900T3 - Composicion de resina para sellado y dispositivo semiconductor cubierto con dicha composicion de resina de sellado. - Google Patents

Composicion de resina para sellado y dispositivo semiconductor cubierto con dicha composicion de resina de sellado.

Info

Publication number
ES2121900T3
ES2121900T3 ES93110289T ES93110289T ES2121900T3 ES 2121900 T3 ES2121900 T3 ES 2121900T3 ES 93110289 T ES93110289 T ES 93110289T ES 93110289 T ES93110289 T ES 93110289T ES 2121900 T3 ES2121900 T3 ES 2121900T3
Authority
ES
Spain
Prior art keywords
sealing
resin composition
semiconductor device
device covered
molecular weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93110289T
Other languages
English (en)
Inventor
Hitoshi Toma
Toshihiko Mimura
Nobuyoshi Takehara
Koji Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP04194792A external-priority patent/JP3073326B2/ja
Priority claimed from JP4194793A external-priority patent/JP2747172B2/ja
Priority claimed from JP4194795A external-priority patent/JPH0621499A/ja
Priority claimed from JP4194794A external-priority patent/JPH0621498A/ja
Priority claimed from JP4307234A external-priority patent/JP2975222B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2121900T3 publication Critical patent/ES2121900T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/804—Materials of encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Sealing Material Composition (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Macromonomer-Based Addition Polymer (AREA)

Abstract

SE PRESENTA UN MATERIAL DE SELLADO QUE EXHIBE UNA EXCELENTE PRESTACION DE SELLADO MIENTRAS MANTIENE UN EQUILIBRIO SATISFACTORIO ENTRE UNA VARIEDAD DE CARACTERISTICAS DE MANERA QUE LA ESTRUCTURA DE SELLADO SE SIMPLIFICA Y LA CANTIDAD DE MATERIAL DE SELLADO SE REDUCE. COMO RESULTADO, SE OBTIENE UNA CELULA SOLAR CUYO COSTE PUEDE SER REDUCIDO SIGNIFICATIVAMENTE Y QUE PUEDE FUNCIONAR ESTABLEMENTE DURANTE UN LARGO TIEMPO MIENTRAS EXHIBE UNA EXCELENTE PRESTACION. UNA COMPOSICION DE RESINA PARA SELLAR CONTIENE AL MENOS UNA RESINA DE ENDURECIMIENTO Y UNA RESINA TERMOPLASTICA QUE TIENE UN PESO MOLECULAR MEDIO MAYOR QUE EL PESO MOLECULAR MEDIO DE LA RESINA DE ENDURECIMIENTO QUE ES SOLUBLE EN LA RESINA DE ENDURECIMIENTO.
ES93110289T 1992-06-29 1993-06-28 Composicion de resina para sellado y dispositivo semiconductor cubierto con dicha composicion de resina de sellado. Expired - Lifetime ES2121900T3 (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP04194792A JP3073326B2 (ja) 1992-06-29 1992-06-29 封止用樹脂組成物及びそれを用いた太陽電池
JP4194793A JP2747172B2 (ja) 1992-06-29 1992-06-29 封止用樹脂組成物及びそれを用いた太陽電池
JP4194795A JPH0621499A (ja) 1992-06-29 1992-06-29 封止用樹脂組成物及びそれを用いた太陽電池
JP4194794A JPH0621498A (ja) 1992-06-29 1992-06-29 封止用樹脂組成物及びそれを用いた太陽電池
JP4307234A JP2975222B2 (ja) 1992-11-17 1992-11-17 太陽電池封止用樹脂組成物

Publications (1)

Publication Number Publication Date
ES2121900T3 true ES2121900T3 (es) 1998-12-16

Family

ID=27529110

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93110289T Expired - Lifetime ES2121900T3 (es) 1992-06-29 1993-06-28 Composicion de resina para sellado y dispositivo semiconductor cubierto con dicha composicion de resina de sellado.

Country Status (8)

Country Link
US (1) US5397401A (es)
EP (1) EP0578091B1 (es)
KR (1) KR970005152B1 (es)
AT (1) ATE170669T1 (es)
AU (1) AU659010B2 (es)
DE (1) DE69320725T2 (es)
DK (1) DK0578091T3 (es)
ES (1) ES2121900T3 (es)

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US5753563A (en) * 1997-07-30 1998-05-19 Chartered Semiconductor Manufacturing Ltd. Method of removing particles by adhesive
US6081017A (en) * 1998-05-28 2000-06-27 Samsung Electronics Co., Ltd. Self-biased solar cell and module adopting the same
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US7612283B2 (en) * 2002-07-09 2009-11-03 Canon Kabushiki Kaisha Solar power generation apparatus and its manufacturing method
JP2004179637A (ja) * 2002-11-14 2004-06-24 Canon Inc 太陽電池モジュール
US6966184B2 (en) * 2002-11-25 2005-11-22 Canon Kabushiki Kaisha Photovoltaic power generating apparatus, method of producing same and photovoltaic power generating system
JP2004336944A (ja) * 2003-05-09 2004-11-25 Canon Inc 電力変換装置及び太陽光発電システム
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JP4681806B2 (ja) * 2003-12-19 2011-05-11 キヤノン株式会社 太陽電池モジュール
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US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US20090087939A1 (en) * 2007-09-28 2009-04-02 Stion Corporation Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices
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US8187434B1 (en) 2007-11-14 2012-05-29 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using single-chamber configuration
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US20090301562A1 (en) * 2008-06-05 2009-12-10 Stion Corporation High efficiency photovoltaic cell and manufacturing method
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US9087943B2 (en) * 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
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US20110017257A1 (en) * 2008-08-27 2011-01-27 Stion Corporation Multi-junction solar module and method for current matching between a plurality of first photovoltaic devices and second photovoltaic devices
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US7855089B2 (en) * 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8569613B1 (en) 2008-09-29 2013-10-29 Stion Corporation Multi-terminal photovoltaic module including independent cells and related system
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
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US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
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US20100078059A1 (en) * 2008-09-30 2010-04-01 Stion Corporation Method and structure for thin film tandem photovoltaic cell
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US7863074B2 (en) * 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
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US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8741689B2 (en) * 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
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US8344243B2 (en) * 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
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Also Published As

Publication number Publication date
KR940006295A (ko) 1994-03-23
EP0578091B1 (en) 1998-09-02
EP0578091A2 (en) 1994-01-12
DE69320725D1 (de) 1998-10-08
US5397401A (en) 1995-03-14
DK0578091T3 (da) 1999-05-31
DE69320725T2 (de) 1999-04-01
EP0578091A3 (en) 1994-01-19
ATE170669T1 (de) 1998-09-15
AU659010B2 (en) 1995-05-04
KR970005152B1 (ko) 1997-04-12
AU4157093A (en) 1994-02-10

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