ES2184273T3 - Proteccion contra cortocircuitos para un interruptor a semiconductores. - Google Patents
Proteccion contra cortocircuitos para un interruptor a semiconductores.Info
- Publication number
- ES2184273T3 ES2184273T3 ES98925659T ES98925659T ES2184273T3 ES 2184273 T3 ES2184273 T3 ES 2184273T3 ES 98925659 T ES98925659 T ES 98925659T ES 98925659 T ES98925659 T ES 98925659T ES 2184273 T3 ES2184273 T3 ES 2184273T3
- Authority
- ES
- Spain
- Prior art keywords
- control
- field effect
- effect transistor
- door
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
Landscapes
- Electronic Switches (AREA)
- Emergency Protection Circuit Devices (AREA)
- Power Conversion In General (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Voltage And Current In General (AREA)
Abstract
SE DESCRIBE UN CONTROL DE POTENCIA (20, 40) PARA CONTROLAR LA POTENCIA ELECTRICA ALIMENTADA DESDE AL FUENTE DE TENSION (12) A UNA CARGA (13), QUE COMPRENDE UN TRANSISTOR DE EFECTO DE CAMPO (21, Q1) PARA HABILITAR O INHABILITAR EL FLUJO DE CORRIENTE DESDE LA FUENTE DE TENSION A LA CARGA, EN RESPUESTA A LA PRESENCIA O AUSENCIA DE UN IMPULSO DE CONTROL DIRIGIDO A LA PUERTA LOGICA DEL TRANSISTOR DE EFECTO DE CAMPO. ADEMAS, EL CONTROL DE POTENCIA COMPRENDE MEDIOS PARA MEDIR EL CAMBIO DEL POTENCIAL DE PUERTA DEL TRANSISTOR DE EFECTO DE CAMPO (24, R6, R7), Y PARA PERMITIR O NO PERMITIR UN IMPULSO DE CONTROL SOBRE LA BASE DE LA MEDICION DEL CAMBIO DE POTENCIAL DE LA PUERTA LOGICA. EN EL CONTROL DE POTENCIA, SE PERMITE AL IMPULSO DE CONTROL QUE CONMUTE EL TRANSISTOR DE EFECTO DE CAMPO (21, Q1) AL ESTADO DE CONDUCCION CUANDO SE DETECTA, AL COMIENZO DEL IMPULSO DE CONTROL, UNA PARADA (31) EN EL AUMENTO DE TENSION, DEBIDO AL EFECTO DE MILLER, Y EL IMPULSO DE CONTROL QUEDA RESPECTIVAMENTE INCAPACITADO PARA CONMUTAR EL TRANSISTOR DE EFECTO DE CAMPO AL ESTADO DE CONDUCCION CUANDO NO SE DETECTA NINGUNA PARADA POR EFECTO DE MILLER (33) EN EL CAMBIO DE POTENCIAL DE PUERTA DEL TRANSISTOR DE EFECTO DE CAMPO AL INICIARSE EL IMPULSO DE CONTROL.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI972455A FI102993B (fi) | 1997-06-10 | 1997-06-10 | Puolijohdekytkimen oikosulkusuoja |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2184273T3 true ES2184273T3 (es) | 2003-04-01 |
Family
ID=8549015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES98925659T Expired - Lifetime ES2184273T3 (es) | 1997-06-10 | 1998-06-09 | Proteccion contra cortocircuitos para un interruptor a semiconductores. |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6160693A (es) |
| EP (1) | EP0943178B1 (es) |
| JP (1) | JP2000517148A (es) |
| AT (1) | ATE224614T1 (es) |
| DE (1) | DE69808044T2 (es) |
| DK (1) | DK0943178T3 (es) |
| ES (1) | ES2184273T3 (es) |
| FI (1) | FI102993B (es) |
| NO (1) | NO323456B1 (es) |
| PL (1) | PL192055B1 (es) |
| RU (1) | RU2212098C2 (es) |
| WO (1) | WO1998059421A1 (es) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2246785C2 (ru) * | 2002-11-28 | 2005-02-20 | Федеральное государственное образовательное учреждение высшего профессионального образования Чувашский государственный университет им. И.Н. Ульянова | Способ защиты управляемого электронного прибора |
| RU2231886C1 (ru) * | 2002-11-28 | 2004-06-27 | Федеральное государственное образовательное учреждение высшего профессионального образования Чувашский государственный университет им. И.Н.Ульянова | Способ защиты управляемого электронного прибора |
| JP4531500B2 (ja) | 2004-01-06 | 2010-08-25 | 三菱電機株式会社 | 半導体装置および半導体装置モジュール |
| US7457092B2 (en) * | 2005-12-07 | 2008-11-25 | Alpha & Omega Semiconductor, Lld. | Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost |
| RU2309534C1 (ru) * | 2005-12-26 | 2007-10-27 | Открытое акционерное общество "Научно-производственный центр "Полюс" (ОАО "НПЦ "Полюс") | Устройство защиты от импульсных коммутационных перенапряжений |
| DE102006022158A1 (de) | 2006-05-12 | 2007-11-15 | Beckhoff Automation Gmbh | Leistungsschaltung mit Kurzschlussschutzschaltung |
| WO2009128942A1 (en) * | 2008-04-16 | 2009-10-22 | Bourns, Inc. | Current limiting surge protection device |
| US20140029152A1 (en) * | 2012-03-30 | 2014-01-30 | Semisouth Laboratories, Inc. | Solid-state circuit breakers |
| ITUB20159684A1 (it) | 2015-12-22 | 2017-06-22 | St Microelectronics Srl | Interruttore elettronico, dispositivo e procedimento corrispondenti |
| DE102017101452A1 (de) | 2017-01-25 | 2018-07-26 | Eaton Industries (Austria) Gmbh | Niederspannungs-Schutzschaltgerät |
| US11519954B2 (en) | 2019-08-27 | 2022-12-06 | Analog Devices International Unlimited Company | Apparatus and method to achieve fast-fault detection on power semiconductor devices |
| CN114152857A (zh) * | 2021-12-07 | 2022-03-08 | 华东师范大学 | 一种二维材料场效应晶体管失效样品的制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3243467C2 (de) * | 1982-11-24 | 1986-02-20 | Siemens AG, 1000 Berlin und 8000 München | Einrichtung zum Schutz eines Schalttransistors |
| US4626954A (en) * | 1984-09-06 | 1986-12-02 | Eaton Corporation | Solid state power controller with overload protection |
| US4893211A (en) * | 1985-04-01 | 1990-01-09 | Motorola, Inc. | Method and circuit for providing adjustable control of short circuit current through a semiconductor device |
| US4914542A (en) * | 1988-12-27 | 1990-04-03 | Westinghouse Electric Corp. | Current limited remote power controller |
| SU1622937A1 (ru) * | 1989-02-23 | 1991-01-23 | В.;О.Р бых и В.А Хвастовский | Устройство контрол работы ключевого транзистора |
| EP0384937A1 (de) * | 1989-03-03 | 1990-09-05 | Siemens Aktiengesellschaft | Schutzschaltung für einen Leistungs-MOSFET |
| DE4113258A1 (de) * | 1991-04-23 | 1992-10-29 | Siemens Ag | Leistungssteuerschaltung mit kurzschlussschutzschaltung |
| US5257155A (en) * | 1991-08-23 | 1993-10-26 | Motorola, Inc. | Short-circuit proof field effect transistor |
| US5485341A (en) * | 1992-09-21 | 1996-01-16 | Kabushiki Kaisha Toshiba | Power transistor overcurrent protection circuit |
| GB9223773D0 (en) * | 1992-11-12 | 1992-12-23 | Raychem Ltd | Switching arrangement |
| FR2701129B1 (fr) * | 1993-01-29 | 1995-03-31 | Merlin Gerin | Interface de puissance de sécurité. |
| EP0766395A3 (de) * | 1995-09-27 | 1999-04-21 | Siemens Aktiengesellschaft | Leistungstransistor mit Kurzschlussschutz |
| KR0171713B1 (ko) * | 1995-12-12 | 1999-05-01 | 이형도 | 전력용 반도체 트랜지스터의 과전류 보호회로 |
| US5959464A (en) * | 1996-09-03 | 1999-09-28 | Motorola Inc. | Loss-less load current sensing driver and method therefor |
| US5808457A (en) * | 1997-01-23 | 1998-09-15 | Ford Motor Company | Transistor overload protection assembly and method with time-varying power source |
-
1997
- 1997-06-10 FI FI972455A patent/FI102993B/fi not_active IP Right Cessation
-
1998
- 1998-06-09 JP JP11503362A patent/JP2000517148A/ja active Pending
- 1998-06-09 WO PCT/FI1998/000495 patent/WO1998059421A1/en not_active Ceased
- 1998-06-09 DE DE69808044T patent/DE69808044T2/de not_active Expired - Lifetime
- 1998-06-09 AT AT98925659T patent/ATE224614T1/de not_active IP Right Cessation
- 1998-06-09 PL PL331418A patent/PL192055B1/pl not_active IP Right Cessation
- 1998-06-09 DK DK98925659T patent/DK0943178T3/da active
- 1998-06-09 US US09/242,030 patent/US6160693A/en not_active Expired - Fee Related
- 1998-06-09 RU RU99103302/09A patent/RU2212098C2/ru not_active IP Right Cessation
- 1998-06-09 EP EP98925659A patent/EP0943178B1/en not_active Expired - Lifetime
- 1998-06-09 ES ES98925659T patent/ES2184273T3/es not_active Expired - Lifetime
-
1999
- 1999-02-09 NO NO19990598A patent/NO323456B1/no not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US6160693A (en) | 2000-12-12 |
| EP0943178A1 (en) | 1999-09-22 |
| PL192055B1 (pl) | 2006-08-31 |
| PL331418A1 (en) | 1999-07-19 |
| JP2000517148A (ja) | 2000-12-19 |
| FI972455L (fi) | 1998-12-11 |
| RU2212098C2 (ru) | 2003-09-10 |
| EP0943178B1 (en) | 2002-09-18 |
| DE69808044T2 (de) | 2003-02-06 |
| NO990598D0 (no) | 1999-02-09 |
| FI102993B1 (fi) | 1999-03-31 |
| FI102993B (fi) | 1999-03-31 |
| WO1998059421A1 (en) | 1998-12-30 |
| DE69808044D1 (de) | 2002-10-24 |
| DK0943178T3 (da) | 2003-01-27 |
| NO990598L (no) | 1999-02-09 |
| ATE224614T1 (de) | 2002-10-15 |
| NO323456B1 (no) | 2007-05-14 |
| FI972455A0 (fi) | 1997-06-10 |
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