ES249909A1 - Procedimiento para introducir impurezas apreciables o influyentes en un cuerpo semiconductivo sëlido - Google Patents

Procedimiento para introducir impurezas apreciables o influyentes en un cuerpo semiconductivo sëlido

Info

Publication number
ES249909A1
ES249909A1 ES0249909A ES249909A ES249909A1 ES 249909 A1 ES249909 A1 ES 249909A1 ES 0249909 A ES0249909 A ES 0249909A ES 249909 A ES249909 A ES 249909A ES 249909 A1 ES249909 A1 ES 249909A1
Authority
ES
Spain
Prior art keywords
appreciable
vapor
layer
impurity
semiconductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0249909A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES249909A1 publication Critical patent/ES249909A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Procedimiento para introducir impurezas apreciables o influyentes en un cuerpo semiconductivo sólido, especialmente en un cuerpo de silicio, el cual comprende la fase de poner el cuerpo en contacto con una atmósfera que contiene la impureza apreciable en estado de vapor; caracterizado porque ese contacto se mantiene a una temperatura y durante un lapso adecuados para producir una capa vítrea en la superficie del citado cuerpo, y una capa difusa de impureza apreciable en el cuerpo mismo; se ataca éste para quitar la capa vitrea, y se calienta luego a una temperatura y durante un lapso convenientes para que la impureza apreciable de la capa difusa se difunda más hacia el interior del cuerpo referido.
ES0249909A 1958-06-09 1959-05-20 Procedimiento para introducir impurezas apreciables o influyentes en un cuerpo semiconductivo sëlido Expired ES249909A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US740958A US3066052A (en) 1958-06-09 1958-06-09 Vapor-solid diffusion of semiconductive material

Publications (1)

Publication Number Publication Date
ES249909A1 true ES249909A1 (es) 1960-05-16

Family

ID=24978760

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0249909A Expired ES249909A1 (es) 1958-06-09 1959-05-20 Procedimiento para introducir impurezas apreciables o influyentes en un cuerpo semiconductivo sëlido

Country Status (8)

Country Link
US (1) US3066052A (es)
BE (1) BE579297A (es)
CH (1) CH397376A (es)
DE (1) DE1148024B (es)
ES (1) ES249909A1 (es)
FR (1) FR1235367A (es)
GB (1) GB909869A (es)
NL (2) NL239076A (es)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3205102A (en) * 1960-11-22 1965-09-07 Hughes Aircraft Co Method of diffusion
US3203840A (en) * 1961-12-14 1965-08-31 Texas Insutruments Inc Diffusion method
DE1444521B2 (de) * 1962-02-01 1971-02-25 Siemens AG, 1000 Berlin u 8000 München Verfahren zur herstellung einer halbleiteranordnung
US3178798A (en) * 1962-05-09 1965-04-20 Ibm Vapor deposition process wherein the vapor contains both donor and acceptor impurities
US3247032A (en) * 1962-06-20 1966-04-19 Continental Device Corp Method for controlling diffusion of an active impurity material into a semiconductor body
US3255005A (en) * 1962-06-29 1966-06-07 Tung Sol Electric Inc Masking process for semiconductor elements
US3303069A (en) * 1963-02-04 1967-02-07 Hitachi Ltd Method of manufacturing semiconductor devices
US3194701A (en) * 1963-04-01 1965-07-13 Robert P Lothrop Method for forming p-n junctions on semiconductors
NL6407230A (es) * 1963-09-28 1965-03-29
US3382114A (en) * 1964-01-07 1968-05-07 Philips Corp Method of manufacturing semiconductor plate using molten zone on powder support
DE1289189B (de) * 1964-07-03 1969-02-13 Telefunken Patent Verfahren zum Eindiffundieren von Stoerstellen in einen Halbleiterkoerper
US3343518A (en) * 1964-09-30 1967-09-26 Hayes Inc C I High temperature furnace
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3542609A (en) * 1967-11-22 1970-11-24 Itt Double depositions of bbr3 in silicon
US3880682A (en) * 1970-02-16 1975-04-29 Siemens Ag Method of simultaneous double diffusion
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
DE3150420A1 (de) * 1981-12-19 1983-06-30 Solarex Corp., 14001 Rockville, Md. Verfahren zur bildung einer duennen phosphorschicht auf siliziumsubstraten durch aufdampfen von h 3 po 4
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4676847A (en) * 1985-01-25 1987-06-30 American Telephone And Telegraph Company At&T Bell Laboratories Controlled boron doping of silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE530566A (es) * 1953-07-22
AT193945B (de) * 1955-06-28 1957-12-10 Western Electric Co Verfahren zur Änderung der spezifischen Leitfähigkeit eines Halbleitermaterials
BE550586A (es) * 1955-12-02

Also Published As

Publication number Publication date
GB909869A (es) 1900-01-01
FR1235367A (fr) 1960-07-08
NL239076A (es) 1900-01-01
US3066052A (en) 1962-11-27
BE579297A (fr) 1959-10-01
DE1148024B (de) 1963-05-02
CH397376A (de) 1965-08-15
NL135875C (es) 1900-01-01

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