ES2578678T3 - Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida - Google Patents

Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida Download PDF

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Publication number
ES2578678T3
ES2578678T3 ES04737345.1T ES04737345T ES2578678T3 ES 2578678 T3 ES2578678 T3 ES 2578678T3 ES 04737345 T ES04737345 T ES 04737345T ES 2578678 T3 ES2578678 T3 ES 2578678T3
Authority
ES
Spain
Prior art keywords
door
semiconductor device
terminal
switching power
fast switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES04737345.1T
Other languages
English (en)
Inventor
Barend Visser
Ocker Cornelis De Jager
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AMBIXTRA Pty Ltd
Original Assignee
AMBIXTRA Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMBIXTRA Pty Ltd filed Critical AMBIXTRA Pty Ltd
Application granted granted Critical
Publication of ES2578678T3 publication Critical patent/ES2578678T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Closed-Circuit Television Systems (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Un dispositivo de puerta aislada (30, 90, 110) que comprende una fuente conectada a un terminal de fuente (98, 122) de una puerta (34, 95, 114) conectado a un terminal de puerta (94, 118) y medios de capacitancia de entrada que proporcionan la capacidad de entrada (CG) entre el terminal de puerta y el terminal de fuente, los medios de capacidad de entrada comprendiendo o bien un condensador en serie (116) entre la puerta (95, 114) y el terminal de puerta (94, 118) o una capa de aislamiento (32) que tiene un espesor suficiente (dins) entre la puerta (34) y un canal del dispositivo de tal manera que cuando el dispositivo es conmutado entre un estado apagado y un estado encendido, una relación de (Cfiss/Ciiss) entre un valor final de la capacitancia de entrada (Cfiss) cuando el dispositivo está encendido y un valor inicial de la capacitancia de entrada (Ciiss) cuando el dispositivo está apagado es de 1 < Cfiss/Ciiss <2,0.

Description

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Claims (1)

  1. imagen1
ES04737345.1T 2003-01-21 2004-01-21 Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida Expired - Lifetime ES2578678T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200300552 2003-01-21
ZA200300552 2003-01-21
PCT/ZA2004/000005 WO2004066395A2 (en) 2003-01-21 2004-01-21 Fast switching power insulated gate semiconductor device

Publications (1)

Publication Number Publication Date
ES2578678T3 true ES2578678T3 (es) 2016-07-29

Family

ID=32772476

Family Applications (1)

Application Number Title Priority Date Filing Date
ES04737345.1T Expired - Lifetime ES2578678T3 (es) 2003-01-21 2004-01-21 Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida

Country Status (7)

Country Link
US (2) US20060118832A1 (es)
EP (1) EP1586120B1 (es)
JP (2) JP5362955B2 (es)
CN (1) CN100508211C (es)
ES (1) ES2578678T3 (es)
WO (1) WO2004066395A2 (es)
ZA (1) ZA200505759B (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039897B2 (en) * 2008-12-19 2011-10-18 Fairchild Semiconductor Corporation Lateral MOSFET with substrate drain connection
US20120019284A1 (en) * 2010-07-26 2012-01-26 Infineon Technologies Austria Ag Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
WO2014034346A1 (ja) * 2012-08-28 2014-03-06 シャープ株式会社 複合型半導体装置
US10957791B2 (en) * 2019-03-08 2021-03-23 Infineon Technologies Americas Corp. Power device with low gate charge and low figure of merit

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Also Published As

Publication number Publication date
JP5362955B2 (ja) 2013-12-11
JP2006516365A (ja) 2006-06-29
US20080203457A1 (en) 2008-08-28
EP1586120B1 (en) 2016-04-27
US8063426B2 (en) 2011-11-22
CN1836337A (zh) 2006-09-20
JP2013179344A (ja) 2013-09-09
WO2004066395A2 (en) 2004-08-05
HK1091321A1 (zh) 2007-01-12
EP1586120A2 (en) 2005-10-19
CN100508211C (zh) 2009-07-01
WO2004066395A3 (en) 2004-09-02
US20060118832A1 (en) 2006-06-08
ZA200505759B (en) 2007-02-28

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