ES278464Y - Elemento componente semi-conductor de potencia. - Google Patents

Elemento componente semi-conductor de potencia.

Info

Publication number: ES278464Y
Authority: ES; Spain
Prior art keywords: component element; conductor component; power semi; semi; power
Prior art date: 1983-03-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

ES1984278464U

Other languages

English (en)

Other versions

ES278464U (es

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

BBC Brown Boveri AG Switzerland

Original Assignee

BBC Brown Boveri AG Switzerland

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-03-31

Filing date

1984-03-28

Publication date

1985-04-01

1984-03-28 Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland

1984-09-16 Publication of ES278464U publication Critical patent/ES278464U/es

1985-04-01 Application granted granted Critical

1985-04-01 Publication of ES278464Y publication Critical patent/ES278464Y/es

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

ES1984278464U 1983-03-31 1984-03-28 Elemento componente semi-conductor de potencia. Expired ES278464Y (es)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CH179383		1983-03-31

Publications (2)

Publication Number	Publication Date
ES278464U ES278464U (es)	1984-09-16
ES278464Y true ES278464Y (es)	1985-04-01

Family

ID=4218726

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ES1984278464U Expired ES278464Y (es)	1983-03-31	1984-03-28	Elemento componente semi-conductor de potencia.

Country Status (5)

Country	Link
US (1)	US4596999A (es)
EP (1)	EP0121068B1 (es)
JP (1)	JPS59184565A (es)
DE (1)	DE3468787D1 (es)
ES (1)	ES278464Y (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3586735D1 (de) *	1984-10-19	1992-11-12	Bbc Brown Boveri & Cie	Abschaltbares leistungshalbleiterbauelement.
CH670528A5 (es) *	1986-03-20	1989-06-15	Bbc Brown Boveri & Cie
US4767722A (en) *	1986-03-24	1988-08-30	Siliconix Incorporated	Method for making planar vertical channel DMOS structures
CH670333A5 (es) *	1986-04-30	1989-05-31	Bbc Brown Boveri & Cie
CH670173A5 (es) *	1986-06-03	1989-05-12	Bbc Brown Boveri & Cie
US4757361A (en) *	1986-07-23	1988-07-12	International Business Machines Corporation	Amorphous thin film transistor device
CH670334A5 (es) *	1986-09-16	1989-05-31	Bbc Brown Boveri & Cie
EP0262485A1 (de) *	1986-10-01	1988-04-06	BBC Brown Boveri AG	Halbleiterbauelement mit einer Ätzgrube
SE8704121D0 (sv) *	1987-10-23	1987-10-23	Linkopings Silicon Constructio	Transistor
EP0317802A1 (de) *	1987-11-25	1989-05-31	BBC Brown Boveri AG	Abschaltbares Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung
JPH01225360A (ja) *	1988-03-04	1989-09-08	Fuji Electric Co Ltd	ゲートターンオフサイリスタ
US5032893A (en) *	1988-04-01	1991-07-16	Cornell Research Foundation, Inc.	Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers
JPH0267764A (ja) *	1988-09-02	1990-03-07	Hitachi Ltd	ゲートターンオフサイリスタ
DE59107655D1 (de) *	1991-02-22	1996-05-09	Asea Brown Boveri	Abschaltbares Hochleistungs-Halbleiterbauelement
EP0696066A3 (en) *	1994-06-30	1998-06-24	Hitachi, Ltd.	Semiconductor switching device and power converter
US6034417A (en) *	1998-05-08	2000-03-07	Micron Technology, Inc.	Semiconductor structure having more usable substrate area and method for forming same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3609476A (en) *	1970-06-26	1971-09-28	Gen Electric	Interdigitated structures for gate turnoff thyristors and for transistors
US4127863A (en) *	1975-10-01	1978-11-28	Tokyo Shibaura Electric Co., Ltd.	Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
JPS53110386A (en) *	1977-03-08	1978-09-27	Toshiba Corp	Semiconductor device
JPS5941568B2 (ja) *	1977-06-02	1984-10-08	株式会社リコー	回転制御装置
JPS603791B2 (ja) *	1978-04-13	1985-01-30	株式会社東芝	メサ型ゲ−トタ−ンオフサイリスタ
JPS6043668B2 (ja) *	1979-07-06	1985-09-30	株式会社日立製作所	半導体装置
JPS56124238A (en) *	1980-03-05	1981-09-29	Hitachi Ltd	Semiconductor device
JPS56131955A (en) *	1980-09-01	1981-10-15	Hitachi Ltd	Semiconductor device
DE3274035D1 (en) *	1981-04-30	1986-12-04	Toshiba Kk	Semiconductor device having a plurality of element units operable in parallel
JPS57201077A (en) *	1981-06-05	1982-12-09	Hitachi Ltd	Semiconductor switching device

1984
- 1984-02-20 DE DE8484101720T patent/DE3468787D1/de not_active Expired
- 1984-02-20 EP EP84101720A patent/EP0121068B1/de not_active Expired
- 1984-03-22 US US06/592,280 patent/US4596999A/en not_active Expired - Fee Related
- 1984-03-28 JP JP59058560A patent/JPS59184565A/ja active Pending
- 1984-03-28 ES ES1984278464U patent/ES278464Y/es not_active Expired

Also Published As

Publication number	Publication date
ES278464U (es)	1984-09-16
US4596999A (en)	1986-06-24
JPS59184565A (ja)	1984-10-19
DE3468787D1 (en)	1988-02-18
EP0121068B1 (de)	1988-01-13
EP0121068A1 (de)	1984-10-10

Legal Events

Date	Code	Title	Description
1998-05-01	FD1K	Utility model lapsed	Effective date: 19980401

Publication	Publication Date	Title
ES283282Y (es)	1985-12-16	Elemento de fijacion.
IT8322493A0 (it)	1983-08-09	Elemento circuitale elettrico.
DE3484313D1 (de)	1991-04-25	Integrierte halbleiterschaltung.
NL191912C (nl)	1996-10-04	Geïntegreerd circuit.
DE3481880D1 (de)	1990-05-10	Schaltkreis.
BR8402334A (pt)	1985-04-02	Elemento fototermografico
ES278464Y (es)	1985-04-01	Elemento componente semi-conductor de potencia.
BR8303501A (pt)	1984-02-07	Elemento de construcao
IT8422886A0 (it)	1984-09-28	Elemento di batteria.
DE3586810D1 (de)	1992-12-17	Halbleiterschaltung.
DE3484817D1 (de)	1991-08-22	Halbleiteranordnung.
DE3483576D1 (de)	1990-12-13	Tor-schaltungsanordnung.
DE3482084D1 (de)	1990-05-31	Integrierte schaltung.
DE3485292D1 (de)	1992-01-09	Lade-entladekreis.
FI841558A0 (fi)	1984-04-18	Kopplingsanordning.
DE3485535D1 (de)	1992-04-09	Multiplizierschaltung.
FI840971L (fi)	1984-09-12	Halvledarelement.
NL190885B (nl)	1994-05-02	Verzwakkerschakeling.
FI841954A0 (fi)	1984-05-15	Tvao-komponent biocid blandning.
IT8722248A0 (it)	1987-10-13	Elemento di serraggio.
IT8423942A0 (it)	1984-12-06	Dispositivo semiconduttore.
IT8420299A0 (it)	1984-03-29	Elemento di fissaggio elettroisolante.
NL193599B (nl)	1999-11-01	Direct gekoppelde halfgeleiderschakeling.
IT8319030A0 (it)	1983-01-07	Elemento di finestra.
DE3481668D1 (de)	1990-04-19	Integrierte halbleiterschaltung.