ES482395A1 - Transistor con tension de avalancha mandada - Google Patents

Transistor con tension de avalancha mandada

Info

Publication number
ES482395A1
ES482395A1 ES482395A ES482395A ES482395A1 ES 482395 A1 ES482395 A1 ES 482395A1 ES 482395 A ES482395 A ES 482395A ES 482395 A ES482395 A ES 482395A ES 482395 A1 ES482395 A1 ES 482395A1
Authority
ES
Spain
Prior art keywords
transistor
controlled
avalanche
sensitive
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES482395A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES482395A1 publication Critical patent/ES482395A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Transistor con tensión de avalancha mandada, siendo mantenido el modo bruscamente conductor de generación de corriente de avalancha estable a poca impedancia, estando caracterizado este transistor porque comprende: un cuerpo de una materia semiconductora de un primer tipo de portadores mayoritarios; al menos un emisor de una materia semiconductora de un segundo tipo de portadores mayoritarios, opuesto al del cuerpo, un primer contacto eléctricamente conductor dispuesto sobre el emisor, al menos un colector de una materia semiconductora del tipo de portadores mayoritarios opuesto al del cuerpo, un segundo contacto eléctricamente conductor dispuesto sobre el colector, medios de mando del rendimiento de inyección, medios de mando del rendimiento de transporte y medios que favorecen la ionización por impacto.
ES482395A 1978-07-13 1979-07-11 Transistor con tension de avalancha mandada Expired ES482395A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/924,489 US4276555A (en) 1978-07-13 1978-07-13 Controlled avalanche voltage transistor and magnetic sensor

Publications (1)

Publication Number Publication Date
ES482395A1 true ES482395A1 (es) 1980-02-16

Family

ID=25450264

Family Applications (1)

Application Number Title Priority Date Filing Date
ES482395A Expired ES482395A1 (es) 1978-07-13 1979-07-11 Transistor con tension de avalancha mandada

Country Status (11)

Country Link
US (1) US4276555A (es)
EP (1) EP0006983B1 (es)
JP (1) JPS5515298A (es)
AU (1) AU526203B2 (es)
BR (1) BR7904454A (es)
CA (1) CA1136772A (es)
DE (1) DE2960810D1 (es)
ES (1) ES482395A1 (es)
IL (1) IL57544A (es)
IT (1) IT1164503B (es)
ZA (1) ZA792857B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
US4288708A (en) * 1980-05-01 1981-09-08 International Business Machines Corp. Differentially modulated avalanche area magnetically sensitive transistor
US4654684A (en) * 1981-04-13 1987-03-31 International Business Machines Corp. Magnetically sensitive transistors utilizing Lorentz field potential modultion of carrier injection
ES508968A0 (es) * 1981-04-13 1983-02-01 Ibm "dispositivo transistor perfeccionado".
JPS58220474A (ja) * 1982-06-15 1983-12-22 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応ダイオ−ド
JPS59222969A (ja) * 1983-05-27 1984-12-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応トランジスタ
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
US6232822B1 (en) * 1988-01-08 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
JP4543142B2 (ja) * 2002-03-01 2010-09-15 独立行政法人産業技術総合研究所 電子雪崩効果による抵抗変化を磁場によって制御した素子及びそれを用いた磁気感応装置
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
KR100590211B1 (ko) * 2002-11-21 2006-06-15 가부시키가이샤 덴소 자기 임피던스 소자, 그를 이용한 센서 장치 및 그 제조방법
US8639065B2 (en) * 2010-06-18 2014-01-28 Kotura, Inc. System having avalanche effect light sensor with enhanced sensitivity
JP5260810B1 (ja) * 2011-08-22 2013-08-14 独立行政法人科学技術振興機構 整流装置、トランジスタおよび整流方法
WO2016035039A1 (en) * 2014-09-05 2016-03-10 Fondazione Bruno Kessler Hall effect magnetic sensor of the improved type and matrix comprising a plurality of said hall effect magnetic sensors.
CN111881635B (zh) * 2020-06-23 2024-04-05 西安理工大学 一种基于Mextram模型RF雪崩效应建模方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2887423A (en) * 1956-06-18 1959-05-19 Beale Julian Robert Anthony Semi-conductor device
US3140438A (en) * 1959-05-08 1964-07-07 Clevite Corp Voltage regulating semiconductor device
US3196329A (en) * 1963-03-08 1965-07-20 Texas Instruments Inc Symmetrical switching diode
US3829889A (en) * 1963-12-16 1974-08-13 Signetics Corp Semiconductor structure
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3714523A (en) * 1971-03-30 1973-01-30 Texas Instruments Inc Magnetic field sensor
US3714559A (en) * 1971-08-10 1973-01-30 Texas Instruments Inc Method of measuring magnetic fields utilizing a three dram igfet with particular bias
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
US3990091A (en) * 1973-04-25 1976-11-02 Westinghouse Electric Corporation Low forward voltage drop thyristor
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS52115671A (en) * 1977-01-21 1977-09-28 Agency Of Ind Science & Technol Multi-terminal type semiconductor element

Also Published As

Publication number Publication date
AU526203B2 (en) 1982-12-23
IT7924143A0 (it) 1979-07-06
JPH0126181B2 (es) 1989-05-22
JPS5515298A (en) 1980-02-02
IL57544A0 (en) 1979-10-31
DE2960810D1 (en) 1981-12-03
AU4868379A (en) 1980-01-17
ZA792857B (en) 1981-01-28
EP0006983B1 (fr) 1981-09-16
US4276555A (en) 1981-06-30
CA1136772A (en) 1982-11-30
IT1164503B (it) 1987-04-15
BR7904454A (pt) 1980-04-08
IL57544A (en) 1981-09-13
EP0006983A1 (fr) 1980-01-23

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