JPS5588376A - Charge transferring device - Google Patents
Charge transferring deviceInfo
- Publication number
- JPS5588376A JPS5588376A JP16319778A JP16319778A JPS5588376A JP S5588376 A JPS5588376 A JP S5588376A JP 16319778 A JP16319778 A JP 16319778A JP 16319778 A JP16319778 A JP 16319778A JP S5588376 A JPS5588376 A JP S5588376A
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- terminal electrode
- voltage supply
- transferring parts
- storage transferring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To prevent the arriving of charge injected from protecting diodes at storage transferring parts and prevent the drop of S/N by separating electrically the protecting diodes connected with voltage supply lines from the storage transferring parts. CONSTITUTION:Storage transferring parts are formed of electrodes 131-133 formed on an insulating film 12 on the surface of a p-type silicon substrate 11. On the other hand, protecting diodes connected with voltage supply lines 141-143 to the electrodes 131-133 are formed in a region separated perfectly from the other parts of the substrate 11 by an n<+>-layer 15. The diode is obtained by diffusion forming an n<+>-type layer 17 in an insular p-type layer 16. An n side terminal electrode 191 is connected with a voltage supply line 141 and a p side terminal electrode 192 is connected to the earth potential. And applying positive voltage to the terminal electrode 193 of the n<+>-type layer 15, the insular p-type layer 16 and the n<+>-type layer 15 are biased reversely. By so doing, electrons injected into the p-type layer 16 do not arrive at the storage transferring parts and the drop of the S/N of output signal can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16319778A JPS5588376A (en) | 1978-12-27 | 1978-12-27 | Charge transferring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16319778A JPS5588376A (en) | 1978-12-27 | 1978-12-27 | Charge transferring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5588376A true JPS5588376A (en) | 1980-07-04 |
Family
ID=15769111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16319778A Pending JPS5588376A (en) | 1978-12-27 | 1978-12-27 | Charge transferring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5588376A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815270A (en) * | 1981-07-21 | 1983-01-28 | Nec Corp | Charge transfer device |
-
1978
- 1978-12-27 JP JP16319778A patent/JPS5588376A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815270A (en) * | 1981-07-21 | 1983-01-28 | Nec Corp | Charge transfer device |
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