ES484652A1 - MULTIPLE POLYGONAL SOURCE DEVICE FOR MOSFET - Google Patents

MULTIPLE POLYGONAL SOURCE DEVICE FOR MOSFET

Info

Publication number
ES484652A1
ES484652A1 ES484652A ES484652A ES484652A1 ES 484652 A1 ES484652 A1 ES 484652A1 ES 484652 A ES484652 A ES 484652A ES 484652 A ES484652 A ES 484652A ES 484652 A1 ES484652 A1 ES 484652A1
Authority
ES
Spain
Prior art keywords
insulating layer
conductivity
source
zone
regulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES484652A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26715426&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES484652(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of ES484652A1 publication Critical patent/ES484652A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

Dispositivo de fuente poligonal múltiple para "Mosfet", de gran potencia; dicho dispositivo comprende un disco de material semiconductor con una primera superficie y una segunda superficie paralela; dicho dispositivo se caracteriza porque en la citada primera superficie existe una pluralidad de zonas fuentes dispuestas espaciadas simétricamente; una capa aislante de regulación en esa primera superficie y dispuesta entre las regiones fuente; y un electrodo de regulación en dicha capa aislante reguladora; un electrodo de consumo en la segunda superficie y medios de electrodo fuentes/generadores conectados a dichas regiones fuente; un canal del primer de los tipos de conductividad dispuesto alrededor de la periferia exterior de cada una de dichas regiones fuente y bajo la citada capa aislante de regulación; un extremo de cada uno de los cintados canales está eléctricamente conectado a los electrodos generadores; el extremo opuesto de cada uno de los canales está conectado a las regiones respectivas, centralmente dispuestas bajo dicha capa aislante reguladora, que cuenta con el segundo tipo de conductividad; una zona de relativamente alta resistividad del segundo de los tipos de conductividad subyacente a la zona común y continua a dicha zona común; esta cuenta con una conductividad esencialmente superior a la de la region subyacente; la zona común y la zona subyacente están en serie en el trayecto de la corriente desde el primero y el segundo electrodos generadores al electrodo de consumo.Multiple polygonal source device for "Mosfet", high power; said device comprises a disk of semiconductor material with a first surface and a second parallel surface; said device is characterized in that on said first surface there is a plurality of symmetrically spaced disposed source zones; a regulating insulating layer on that first surface and arranged between the source regions; and a regulating electrode in said regulating insulating layer; a consuming electrode on the second surface and source / generator electrode means connected to said source regions; a channel of the first type of conductivity arranged around the outer periphery of each of said source regions and under said regulating insulating layer; one end of each of the tapered two channels is electrically connected to the generator electrodes; the opposite end of each of the channels is connected to the respective regions, centrally arranged under said regulating insulating layer, which has the second type of conductivity; a zone of relatively high resistivity of the second of the types of conductivity underlying the common zone and continuous to said common zone; this has a conductivity essentially higher than that of the underlying region; the common zone and the underlying zone are in series in the current path from the first and second generating electrodes to the consuming electrode.

ES484652A 1978-10-13 1979-10-02 MULTIPLE POLYGONAL SOURCE DEVICE FOR MOSFET Expired ES484652A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95131078A 1978-10-13 1978-10-13
US3866279A 1979-05-14 1979-05-14

Publications (1)

Publication Number Publication Date
ES484652A1 true ES484652A1 (en) 1980-09-01

Family

ID=26715426

Family Applications (1)

Application Number Title Priority Date Filing Date
ES484652A Expired ES484652A1 (en) 1978-10-13 1979-10-02 MULTIPLE POLYGONAL SOURCE DEVICE FOR MOSFET

Country Status (19)

Country Link
JP (2) JP2622378B2 (en)
AR (1) AR219006A1 (en)
BR (1) BR7906338A (en)
CA (2) CA1123119A (en)
CH (2) CH642485A5 (en)
CS (1) CS222676B2 (en)
DE (2) DE2954481C2 (en)
DK (3) DK157272C (en)
ES (1) ES484652A1 (en)
FR (1) FR2438917A1 (en)
GB (1) GB2033658B (en)
HU (1) HU182506B (en)
IL (1) IL58128A (en)
IT (1) IT1193238B (en)
MX (1) MX147137A (en)
NL (1) NL175358C (en)
PL (1) PL123961B1 (en)
SE (2) SE443682B (en)
SU (1) SU1621817A3 (en)

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US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
DE3040775C2 (en) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Controllable MIS semiconductor device
US4412242A (en) 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
DE3346286A1 (en) * 1982-12-21 1984-06-28 International Rectifier Corp., Los Angeles, Calif. High-power metal-oxide field-effect transistor semiconductor component
JPS59167066A (en) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field effect transistor
JPS6010677A (en) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd Vertical mos transistor
JPH0247874A (en) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Manufacture of mos semiconductor device
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
IT1247293B (en) * 1990-05-09 1994-12-12 Int Rectifier Corp POWER TRANSISTOR DEVICE PRESENTING AN ULTRA-DEEP REGION, AT A GREATER CONCENTRATION
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
IT1250233B (en) * 1991-11-29 1995-04-03 St Microelectronics Srl PROCEDURE FOR THE MANUFACTURE OF INTEGRATED CIRCUITS IN MOS TECHNOLOGY.
DE59208987D1 (en) * 1992-08-10 1997-11-27 Siemens Ag Power MOSFET with improved avalanche strength
JPH06268227A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Insulated gate bipolar transistor
US5798287A (en) * 1993-12-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Method for forming a power MOS device chip
EP0660396B1 (en) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power MOS device chip and package assembly
DE69321966T2 (en) * 1993-12-24 1999-06-02 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Power semiconductor device
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
EP0689238B1 (en) * 1994-06-23 2002-02-20 STMicroelectronics S.r.l. MOS-technology power device manufacturing process
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
EP0697728B1 (en) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. MOS-technology power device chip and package assembly
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
EP0772242B1 (en) 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Single feature size MOS technology power device
EP0772241B1 (en) * 1995-10-30 2004-06-09 STMicroelectronics S.r.l. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
DE69518653T2 (en) * 1995-12-28 2001-04-19 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania MOS technology power arrangement in an integrated structure
EP0961325B1 (en) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. High integration density MOS technology power device
US6563169B1 (en) 1999-04-09 2003-05-13 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer
JP4122113B2 (en) * 1999-06-24 2008-07-23 新電元工業株式会社 High breakdown strength field effect transistor
US6344379B1 (en) * 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor
JP4845293B2 (en) * 2000-08-30 2011-12-28 新電元工業株式会社 Field effect transistor
JP2006295134A (en) 2005-03-17 2006-10-26 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9530844B2 (en) 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
US10115815B2 (en) * 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
JP5907097B2 (en) * 2013-03-18 2016-04-20 三菱電機株式会社 Semiconductor device
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
KR102098996B1 (en) 2014-08-19 2020-04-08 비쉐이-실리코닉스 Super-junction metal oxide semiconductor field effect transistor
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US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness

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Also Published As

Publication number Publication date
JPH07169950A (en) 1995-07-04
DK157272B (en) 1989-11-27
FR2438917B1 (en) 1984-09-07
SE7908479L (en) 1980-04-14
DK512488A (en) 1988-09-15
CA1136291A (en) 1982-11-23
SE8503615D0 (en) 1985-07-26
DE2954481C2 (en) 1990-12-06
FR2438917A1 (en) 1980-05-09
GB2033658B (en) 1983-03-02
CA1123119A (en) 1982-05-04
MX147137A (en) 1982-10-13
SE443682B (en) 1986-03-03
PL218878A1 (en) 1980-08-11
DE2940699A1 (en) 1980-04-24
CS222676B2 (en) 1983-07-29
CH642485A5 (en) 1984-04-13
NL175358B (en) 1984-05-16
DE2940699C2 (en) 1986-04-03
JP2622378B2 (en) 1997-06-18
DK350679A (en) 1980-04-14
NL175358C (en) 1984-10-16
NL7907472A (en) 1980-04-15
AR219006A1 (en) 1980-07-15
SE8503615L (en) 1985-07-26
SU1621817A3 (en) 1991-01-15
HU182506B (en) 1984-01-30
SE465444B (en) 1991-09-09
DK512388D0 (en) 1988-09-15
JPS6323365A (en) 1988-01-30
DK512488D0 (en) 1988-09-15
DK157272C (en) 1990-04-30
IT7926435A0 (en) 1979-10-11
CH660649A5 (en) 1987-05-15
IL58128A (en) 1981-12-31
GB2033658A (en) 1980-05-21
BR7906338A (en) 1980-06-24
DK512388A (en) 1988-09-15
PL123961B1 (en) 1982-12-31
IT1193238B (en) 1988-06-15
JP2643095B2 (en) 1997-08-20

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FD1A Patent lapsed

Effective date: 20010201