ES487066A1 - Perfeccionamientos en dispositivos de conmutacion de estado solido - Google Patents

Perfeccionamientos en dispositivos de conmutacion de estado solido

Info

Publication number
ES487066A1
ES487066A1 ES487066A ES487066A ES487066A1 ES 487066 A1 ES487066 A1 ES 487066A1 ES 487066 A ES487066 A ES 487066A ES 487066 A ES487066 A ES 487066A ES 487066 A1 ES487066 A1 ES 487066A1
Authority
ES
Spain
Prior art keywords
region
conductivity
gate
type
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES487066A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES487066A1 publication Critical patent/ES487066A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Electronic Switches (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Perfeccionamientos en dispositivos de conmutación de estado sólido, que comprenden un cuerpo semiconductor, del cual una parte principal es de un primer tipo de conductividad, una primera región del primer tipo de conductividad, una segunda región de un segundo tipo de conductividad opuesto al primer tipo de conductividad, una región de puerta del segundo tipo de conductividad, estando mutuamente separadas la primera región, la segunda región y la región de puerta por partes de la masa principal, siendo la resistividad de la primera región, la segunda región y la región de puerta menores que la resistividad de la parte principal, eligiendose los parámetros del dispositivo de modo que alimentándose un primer voltaje a la presión de puerta, se forme una región de transición en el cuerpo del semiconductor que evita virtualmente el flujo de corriente entre la primera y la segunda regiones, y que, con un segundo voltaje alimentados a la región de puerta y con voltaje apropiados alimentados a laprimera y la segunda regiones, se establece una corriente de resistencia relativamente baja entre la primera y la segunda regiones por doble inyección de portadores; caracterizado porque la primera y la segunda regiones y la región de puerta tienen cada una superficie contenida sobre la primera superficie principal del cuerpo semiconductor.
ES487066A 1978-12-20 1979-12-19 Perfeccionamientos en dispositivos de conmutacion de estado solido Expired ES487066A1 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202178A 1978-12-20 1978-12-20
US97202278A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20

Publications (1)

Publication Number Publication Date
ES487066A1 true ES487066A1 (es) 1980-09-16

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
ES487066A Expired ES487066A1 (es) 1978-12-20 1979-12-19 Perfeccionamientos en dispositivos de conmutacion de estado solido

Country Status (18)

Country Link
JP (1) JPS6412106B2 (es)
KR (1) KR830002293B1 (es)
AU (1) AU529702B2 (es)
CH (1) CH659151A5 (es)
DD (1) DD147897A5 (es)
ES (1) ES487066A1 (es)
FR (1) FR2445026A1 (es)
GB (1) GB2049283B (es)
HU (1) HU181030B (es)
IE (1) IE48892B1 (es)
IL (1) IL58970A (es)
IN (1) IN153497B (es)
IT (1) IT1126603B (es)
NL (1) NL7920184A (es)
PL (1) PL220494A1 (es)
SE (1) SE446139B (es)
SG (1) SG32884G (es)
WO (1) WO1980001337A1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
JPS58500427A (ja) * 1981-03-27 1983-03-17 ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド ゲ−テツド・ダイオ−ド・スイツチ
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (es) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (es) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
FR2445026A1 (fr) 1980-07-18
FR2445026B1 (es) 1983-08-19
JPS6412106B2 (es) 1989-02-28
AU5386679A (en) 1980-06-26
NL7920184A (nl) 1980-10-31
IL58970A0 (en) 1980-03-31
IL58970A (en) 1982-07-30
CH659151A5 (de) 1986-12-31
JPS55501079A (es) 1980-12-04
SE8005703L (sv) 1980-08-13
IE48892B1 (en) 1985-06-12
KR830001743A (ko) 1983-05-18
IT7928206A0 (it) 1979-12-19
SE446139B (sv) 1986-08-11
IE792474L (en) 1980-06-20
WO1980001337A1 (en) 1980-06-26
GB2049283A (en) 1980-12-17
IT1126603B (it) 1986-05-21
GB2049283B (en) 1983-07-27
HU181030B (en) 1983-05-30
AU529702B2 (en) 1983-06-16
PL220494A1 (es) 1980-09-08
IN153497B (es) 1984-07-21
DD147897A5 (de) 1981-04-22
SG32884G (en) 1985-02-08
KR830002293B1 (ko) 1983-10-21

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19970519