ES557632A0 - Procedimiento para la fabricacion de transistores con efecto de campo por barrera schotky metal-semiconductor (mesfet) - Google Patents

Procedimiento para la fabricacion de transistores con efecto de campo por barrera schotky metal-semiconductor (mesfet)

Info

Publication number
ES557632A0
ES557632A0 ES557632A ES557632A ES557632A0 ES 557632 A0 ES557632 A0 ES 557632A0 ES 557632 A ES557632 A ES 557632A ES 557632 A ES557632 A ES 557632A ES 557632 A0 ES557632 A0 ES 557632A0
Authority
ES
Spain
Prior art keywords
schotky
mesfet
procedure
manufacture
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES557632A
Other languages
English (en)
Other versions
ES8801062A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telettra Laboratori di Telefonia Elettronica e Radio SpA
Original Assignee
Telettra Laboratori di Telefonia Elettronica e Radio SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telettra Laboratori di Telefonia Elettronica e Radio SpA filed Critical Telettra Laboratori di Telefonia Elettronica e Radio SpA
Publication of ES557632A0 publication Critical patent/ES557632A0/es
Publication of ES8801062A1 publication Critical patent/ES8801062A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H10D64/0125—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors characterised by the sectional shape, e.g. T or inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/483—Interconnections over air gaps, e.g. air bridges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
ES557632A 1985-01-28 1987-07-16 Procedimiento para la fabricacion de transistores con efecto de campo por barrera schotky metal-semiconductor (mesfet) Expired ES8801062A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19262/85A IT1184723B (it) 1985-01-28 1985-01-28 Transistore mesfet con strato d'aria tra le connessioni dell'elettrodo di gate al supporto e relativo procedimento difabbricazione

Publications (2)

Publication Number Publication Date
ES557632A0 true ES557632A0 (es) 1987-12-01
ES8801062A1 ES8801062A1 (es) 1987-12-01

Family

ID=11156212

Family Applications (2)

Application Number Title Priority Date Filing Date
ES551302A Expired ES8800788A1 (es) 1985-01-28 1986-01-28 Transistor con efecto de campo por barrera schottky metal-semiconductor (mesfet)
ES557632A Expired ES8801062A1 (es) 1985-01-28 1987-07-16 Procedimiento para la fabricacion de transistores con efecto de campo por barrera schotky metal-semiconductor (mesfet)

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES551302A Expired ES8800788A1 (es) 1985-01-28 1986-01-28 Transistor con efecto de campo por barrera schottky metal-semiconductor (mesfet)

Country Status (6)

Country Link
US (2) US4807002A (es)
EP (1) EP0203225A3 (es)
JP (1) JP2543849B2 (es)
CA (1) CA1266132A (es)
ES (2) ES8800788A1 (es)
IT (1) IT1184723B (es)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612557A (en) * 1986-10-27 1997-03-18 Seiko Epson Corporation Semiconductor device having an inter-layer insulating film disposed between two wiring layers
US5191402A (en) * 1986-10-27 1993-03-02 Seiko Epson Corporation Semiconductor device having an inter-layer insulating film disposed between two wiring layers
KR920007787B1 (ko) * 1987-06-09 1992-09-17 세이꼬 엡슨 가부시끼가이샤 반도체 장치 및 그 제조방법
JPS6481343A (en) * 1987-09-24 1989-03-27 Nec Corp Manufacture of integrated circuit
FR2633454B1 (fr) * 1988-06-24 1992-01-17 Thomson Hybrides Microondes Dispositif d'accrochage de poutre sur un composant semiconducteur et son procede de fabrication
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
JPH0355852A (ja) * 1989-07-25 1991-03-11 Sony Corp 半導体装置の製造方法
US5019877A (en) * 1989-08-31 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
JPH0824133B2 (ja) * 1989-08-31 1996-03-06 三菱電機株式会社 半導体装置及びその製造方法
JP2856778B2 (ja) * 1989-09-07 1999-02-10 株式会社東芝 半導体装置の配線構造
JPH088306B2 (ja) * 1990-03-07 1996-01-29 株式会社東芝 半導体装置
US5145438A (en) * 1991-07-15 1992-09-08 Xerox Corporation Method of manufacturing a planar microelectronic device
JP3019884B2 (ja) * 1991-09-05 2000-03-13 松下電器産業株式会社 半導体装置およびその製造方法
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
JP3359780B2 (ja) * 1995-04-12 2002-12-24 三菱電機株式会社 配線装置
JPH09298295A (ja) * 1996-05-02 1997-11-18 Honda Motor Co Ltd 高電子移動度トランジスタ及びその製造方法
JP3499103B2 (ja) * 1997-02-21 2004-02-23 三菱電機株式会社 半導体装置
US5856217A (en) * 1997-04-10 1999-01-05 Hughes Electronics Corporation Modulation-doped field-effect transistors and fabrication processes
US6201283B1 (en) * 1999-09-08 2001-03-13 Trw Inc. Field effect transistor with double sided airbridge
US7081470B2 (en) * 2001-01-31 2006-07-25 H. Lundbeck A/S Use of GALR3 receptor antagonists for the treatment of depression and/or anxiety and compounds useful in such methods
JP2010205837A (ja) * 2009-03-02 2010-09-16 Mitsubishi Electric Corp 電界効果型トランジスタ及びその製造方法
JP5716737B2 (ja) * 2010-03-01 2015-05-13 富士通株式会社 化合物半導体装置及びその製造方法
JP2013182992A (ja) * 2012-03-01 2013-09-12 Toshiba Corp 半導体装置
JP2013183062A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体装置
CN105633144B (zh) * 2015-06-26 2019-09-24 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647585A (en) * 1969-05-23 1972-03-07 Bell Telephone Labor Inc Method of eliminating pinhole shorts in an air-isolated crossover
US3925880A (en) * 1971-04-29 1975-12-16 Signetics Corp Semiconductor assembly with beam lead construction and method
US3737743A (en) * 1971-12-23 1973-06-05 Gen Electric High power microwave field effect transistor
CA1027257A (en) * 1974-10-29 1978-02-28 James A. Benjamin Overlay metallization field effect transistor
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
JPS56133876A (en) * 1980-03-24 1981-10-20 Nippon Telegr & Teleph Corp <Ntt> Manufacture of junction type field effect semiconductor device
JPS5726471A (en) * 1980-07-24 1982-02-12 Fujitsu Ltd Semiconductor device
JPS5892277A (ja) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
JPS5976437A (ja) * 1982-10-26 1984-05-01 Fujitsu Ltd 半導体装置
JPS6180869A (ja) * 1984-09-27 1986-04-24 Nec Corp 半導体装置の製造方法
JPS62115877A (ja) * 1985-11-15 1987-05-27 Fujitsu Ltd 接合型電界効果トランジスタ、およびその製造方法

Also Published As

Publication number Publication date
CA1266132A (en) 1990-02-20
IT8519262A0 (it) 1985-01-28
US4871687A (en) 1989-10-03
ES8801062A1 (es) 1987-12-01
IT1184723B (it) 1987-10-28
EP0203225A2 (en) 1986-12-03
US4807002A (en) 1989-02-21
ES8800788A1 (es) 1987-11-16
EP0203225A3 (en) 1987-05-13
ES551302A0 (es) 1987-11-16
JP2543849B2 (ja) 1996-10-16
JPS61181170A (ja) 1986-08-13

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