FR1435488A - Transistors à effets de champ et à porte isolée - Google Patents

Transistors à effets de champ et à porte isolée

Info

Publication number
FR1435488A
FR1435488A FR18895A FR18895A FR1435488A FR 1435488 A FR1435488 A FR 1435488A FR 18895 A FR18895 A FR 18895A FR 18895 A FR18895 A FR 18895A FR 1435488 A FR1435488 A FR 1435488A
Authority
FR
France
Prior art keywords
field effect
effect transistors
insulated gate
gate field
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR18895A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US371674A external-priority patent/US3374407A/en
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Priority to FR18895A priority Critical patent/FR1435488A/fr
Application granted granted Critical
Publication of FR1435488A publication Critical patent/FR1435488A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
FR18895A 1964-06-01 1965-05-31 Transistors à effets de champ et à porte isolée Expired FR1435488A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR18895A FR1435488A (fr) 1964-06-01 1965-05-31 Transistors à effets de champ et à porte isolée

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US371674A US3374407A (en) 1964-06-01 1964-06-01 Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
FR18895A FR1435488A (fr) 1964-06-01 1965-05-31 Transistors à effets de champ et à porte isolée

Publications (1)

Publication Number Publication Date
FR1435488A true FR1435488A (fr) 1966-04-15

Family

ID=26163999

Family Applications (1)

Application Number Title Priority Date Filing Date
FR18895A Expired FR1435488A (fr) 1964-06-01 1965-05-31 Transistors à effets de champ et à porte isolée

Country Status (1)

Country Link
FR (1) FR1435488A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614300A1 (de) * 1966-12-13 1970-07-09 Philips Nv Feldeffekttransistor mit isolierter Torelektrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614300A1 (de) * 1966-12-13 1970-07-09 Philips Nv Feldeffekttransistor mit isolierter Torelektrode

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