CH462327A - Transistor à effet de champ à porte isolée - Google Patents

Transistor à effet de champ à porte isolée

Info

Publication number
CH462327A
CH462327A CH484868A CH484868A CH462327A CH 462327 A CH462327 A CH 462327A CH 484868 A CH484868 A CH 484868A CH 484868 A CH484868 A CH 484868A CH 462327 A CH462327 A CH 462327A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
insulated gate
gate field
insulated
Prior art date
Application number
CH484868A
Other languages
English (en)
Inventor
Bennett Helsdon Peter
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Publication of CH462327A publication Critical patent/CH462327A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/43—Gaseous fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
CH484868A 1967-04-04 1968-04-02 Transistor à effet de champ à porte isolée CH462327A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25377/67A GB1134998A (en) 1967-04-04 1967-04-04 Improvements in or relating to insulated gate field effect transistors

Publications (1)

Publication Number Publication Date
CH462327A true CH462327A (fr) 1968-09-15

Family

ID=10058090

Family Applications (1)

Application Number Title Priority Date Filing Date
CH484868A CH462327A (fr) 1967-04-04 1968-04-02 Transistor à effet de champ à porte isolée

Country Status (6)

Country Link
US (1) US3489965A (fr)
CH (1) CH462327A (fr)
DE (1) DE1764096A1 (fr)
FR (1) FR1558876A (fr)
GB (1) GB1134998A (fr)
NL (1) NL6804657A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
KR100425750B1 (ko) 1995-04-05 2004-07-16 유나이티브 인터내셔널 리미티드 마이크로일렉트로닉 기판용 솔더범프구조체
US6025767A (en) * 1996-08-05 2000-02-15 Mcnc Encapsulated micro-relay modules and methods of fabricating same
AU2002228926A1 (en) * 2000-11-10 2002-05-21 Unitive Electronics, Inc. Methods of positioning components using liquid prime movers and related structures
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
WO2004001837A2 (fr) * 2002-06-25 2003-12-31 Unitive International Limited Procedes de formation de structures electroniques comprenant des couches de derivation conductrices et structures associees
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7049216B2 (en) * 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
WO2005101499A2 (fr) 2004-04-13 2005-10-27 Unitive International Limited Procedes de formation de bossage de soudure sur plages metalliques exposees et structures connexes
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793331A (en) * 1955-05-09 1957-05-21 Sperry Rand Corp Semi-conductive devices
NL95308C (fr) * 1956-02-29 1960-09-15
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
BE584431A (fr) * 1959-02-09
US3244947A (en) * 1962-06-15 1966-04-05 Slater Electric Inc Semi-conductor diode and manufacture thereof
US3274458A (en) * 1964-04-02 1966-09-20 Int Rectifier Corp Extremely high voltage silicon device

Also Published As

Publication number Publication date
GB1134998A (en) 1968-11-27
US3489965A (en) 1970-01-13
NL6804657A (fr) 1968-10-07
DE1764096A1 (de) 1971-05-27
FR1558876A (fr) 1969-02-28

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