FR1491166A - Transistor à effet de champ, et à porte isolée - Google Patents

Transistor à effet de champ, et à porte isolée

Info

Publication number
FR1491166A
FR1491166A FR8012A FR06008012A FR1491166A FR 1491166 A FR1491166 A FR 1491166A FR 8012 A FR8012 A FR 8012A FR 06008012 A FR06008012 A FR 06008012A FR 1491166 A FR1491166 A FR 1491166A
Authority
FR
France
Prior art keywords
field effect
effect transistor
insulated gate
gate field
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8012A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1491166A publication Critical patent/FR1491166A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR8012A 1965-09-29 1966-08-23 Transistor à effet de champ, et à porte isolée Expired FR1491166A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49120165A 1965-09-29 1965-09-29

Publications (1)

Publication Number Publication Date
FR1491166A true FR1491166A (fr) 1967-08-04

Family

ID=23951192

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8012A Expired FR1491166A (fr) 1965-09-29 1966-08-23 Transistor à effet de champ, et à porte isolée

Country Status (4)

Country Link
US (1) US3450960A (fr)
DE (1) DE1564179A1 (fr)
FR (1) FR1491166A (fr)
GB (1) GB1130028A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145438B1 (fr) * 1971-06-25 1976-12-03
US3930300A (en) * 1973-04-04 1976-01-06 Harris Corporation Junction field effect transistor
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
NL8204855A (nl) * 1982-12-16 1984-07-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode en werkwijze ter vervaardiging daarvan.
US4990983A (en) * 1986-10-31 1991-02-05 Rockwell International Corporation Radiation hardened field oxides for NMOS and CMOS-bulk and process for forming

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE552928A (fr) * 1957-03-18
US2967985A (en) * 1957-04-11 1961-01-10 Shockley Transistor structure
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
US3098160A (en) * 1958-02-24 1963-07-16 Clevite Corp Field controlled avalanche semiconductive device
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
US2994811A (en) * 1959-05-04 1961-08-01 Bell Telephone Labor Inc Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
NL297331A (fr) * 1963-08-30
US3333115A (en) * 1963-11-20 1967-07-25 Toko Inc Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor

Also Published As

Publication number Publication date
GB1130028A (en) 1968-10-09
DE1564179A1 (de) 1969-12-18
US3450960A (en) 1969-06-17

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