FR2344965A1 - Composant a semi-conducteurs denue de capot et comportant un puits de chaleur double - Google Patents

Composant a semi-conducteurs denue de capot et comportant un puits de chaleur double

Info

Publication number
FR2344965A1
FR2344965A1 FR7707300A FR7707300A FR2344965A1 FR 2344965 A1 FR2344965 A1 FR 2344965A1 FR 7707300 A FR7707300 A FR 7707300A FR 7707300 A FR7707300 A FR 7707300A FR 2344965 A1 FR2344965 A1 FR 2344965A1
Authority
FR
France
Prior art keywords
chip
glass
double heat
sell
hood
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7707300A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2344965A1 publication Critical patent/FR2344965A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4403Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/258Metallic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7707300A 1976-03-16 1977-03-11 Composant a semi-conducteurs denue de capot et comportant un puits de chaleur double Withdrawn FR2344965A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762611059 DE2611059A1 (de) 1976-03-16 1976-03-16 Gehaeuseloses halbleiterbauelement mit doppelwaermesenke

Publications (1)

Publication Number Publication Date
FR2344965A1 true FR2344965A1 (fr) 1977-10-14

Family

ID=5972617

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7707300A Withdrawn FR2344965A1 (fr) 1976-03-16 1977-03-11 Composant a semi-conducteurs denue de capot et comportant un puits de chaleur double

Country Status (3)

Country Link
DE (1) DE2611059A1 (it)
FR (1) FR2344965A1 (it)
IT (1) IT1077691B (it)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7809334A (nl) * 1977-09-14 1979-03-16 Raytheon Co Halfgeleider-microgolfinrichting met verbeterde thermi- sche eigenschappen.
FR2489042A1 (fr) * 1980-08-21 1982-02-26 Suwa Seikosha Kk Dispositif a semi-conducteur comportant une structure d'interconnexion multicouche et procede de fabrication correspondant
FR2538616A1 (fr) * 1982-12-28 1984-06-29 Thomson Csf Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues
FR2549292A1 (fr) * 1983-07-12 1985-01-18 Silicium Semiconducteur Ssc Procede de montage de diode
EP0913711A1 (de) * 1997-10-29 1999-05-06 Meto International GmbH Identifizierungselement und Verfahren zu seiner Herstellung
WO2001020671A1 (en) * 1999-09-17 2001-03-22 Motorola, Inc. Semiconductor wafer level package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7809334A (nl) * 1977-09-14 1979-03-16 Raytheon Co Halfgeleider-microgolfinrichting met verbeterde thermi- sche eigenschappen.
FR2489042A1 (fr) * 1980-08-21 1982-02-26 Suwa Seikosha Kk Dispositif a semi-conducteur comportant une structure d'interconnexion multicouche et procede de fabrication correspondant
FR2538616A1 (fr) * 1982-12-28 1984-06-29 Thomson Csf Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues
FR2549292A1 (fr) * 1983-07-12 1985-01-18 Silicium Semiconducteur Ssc Procede de montage de diode
EP0913711A1 (de) * 1997-10-29 1999-05-06 Meto International GmbH Identifizierungselement und Verfahren zu seiner Herstellung
WO2001020671A1 (en) * 1999-09-17 2001-03-22 Motorola, Inc. Semiconductor wafer level package

Also Published As

Publication number Publication date
IT1077691B (it) 1985-05-04
DE2611059A1 (de) 1977-09-29

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