FR2344965A1 - Composant a semi-conducteurs denue de capot et comportant un puits de chaleur double - Google Patents
Composant a semi-conducteurs denue de capot et comportant un puits de chaleur doubleInfo
- Publication number
- FR2344965A1 FR2344965A1 FR7707300A FR7707300A FR2344965A1 FR 2344965 A1 FR2344965 A1 FR 2344965A1 FR 7707300 A FR7707300 A FR 7707300A FR 7707300 A FR7707300 A FR 7707300A FR 2344965 A1 FR2344965 A1 FR 2344965A1
- Authority
- FR
- France
- Prior art keywords
- chip
- glass
- double heat
- sell
- hood
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/258—Metallic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762611059 DE2611059A1 (de) | 1976-03-16 | 1976-03-16 | Gehaeuseloses halbleiterbauelement mit doppelwaermesenke |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2344965A1 true FR2344965A1 (fr) | 1977-10-14 |
Family
ID=5972617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7707300A Withdrawn FR2344965A1 (fr) | 1976-03-16 | 1977-03-11 | Composant a semi-conducteurs denue de capot et comportant un puits de chaleur double |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2611059A1 (it) |
| FR (1) | FR2344965A1 (it) |
| IT (1) | IT1077691B (it) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7809334A (nl) * | 1977-09-14 | 1979-03-16 | Raytheon Co | Halfgeleider-microgolfinrichting met verbeterde thermi- sche eigenschappen. |
| FR2489042A1 (fr) * | 1980-08-21 | 1982-02-26 | Suwa Seikosha Kk | Dispositif a semi-conducteur comportant une structure d'interconnexion multicouche et procede de fabrication correspondant |
| FR2538616A1 (fr) * | 1982-12-28 | 1984-06-29 | Thomson Csf | Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues |
| FR2549292A1 (fr) * | 1983-07-12 | 1985-01-18 | Silicium Semiconducteur Ssc | Procede de montage de diode |
| EP0913711A1 (de) * | 1997-10-29 | 1999-05-06 | Meto International GmbH | Identifizierungselement und Verfahren zu seiner Herstellung |
| WO2001020671A1 (en) * | 1999-09-17 | 2001-03-22 | Motorola, Inc. | Semiconductor wafer level package |
-
1976
- 1976-03-16 DE DE19762611059 patent/DE2611059A1/de not_active Withdrawn
-
1977
- 1977-03-10 IT IT21109/77A patent/IT1077691B/it active
- 1977-03-11 FR FR7707300A patent/FR2344965A1/fr not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7809334A (nl) * | 1977-09-14 | 1979-03-16 | Raytheon Co | Halfgeleider-microgolfinrichting met verbeterde thermi- sche eigenschappen. |
| FR2489042A1 (fr) * | 1980-08-21 | 1982-02-26 | Suwa Seikosha Kk | Dispositif a semi-conducteur comportant une structure d'interconnexion multicouche et procede de fabrication correspondant |
| FR2538616A1 (fr) * | 1982-12-28 | 1984-06-29 | Thomson Csf | Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues |
| FR2549292A1 (fr) * | 1983-07-12 | 1985-01-18 | Silicium Semiconducteur Ssc | Procede de montage de diode |
| EP0913711A1 (de) * | 1997-10-29 | 1999-05-06 | Meto International GmbH | Identifizierungselement und Verfahren zu seiner Herstellung |
| WO2001020671A1 (en) * | 1999-09-17 | 2001-03-22 | Motorola, Inc. | Semiconductor wafer level package |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1077691B (it) | 1985-05-04 |
| DE2611059A1 (de) | 1977-09-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |