FR2473790A1 - Dispositif de commutation a semi-conducteur - Google Patents

Dispositif de commutation a semi-conducteur Download PDF

Info

Publication number
FR2473790A1
FR2473790A1 FR8027441A FR8027441A FR2473790A1 FR 2473790 A1 FR2473790 A1 FR 2473790A1 FR 8027441 A FR8027441 A FR 8027441A FR 8027441 A FR8027441 A FR 8027441A FR 2473790 A1 FR2473790 A1 FR 2473790A1
Authority
FR
France
Prior art keywords
region
regions
type
semiconductor
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8027441A
Other languages
English (en)
French (fr)
Other versions
FR2473790B1 (da
Inventor
Adrian Ralph Hartman
Terence James Riley
Peter William Shackle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2473790A1 publication Critical patent/FR2473790A1/fr
Application granted granted Critical
Publication of FR2473790B1 publication Critical patent/FR2473790B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Bipolar Transistors (AREA)
FR8027441A 1979-12-28 1980-12-24 Dispositif de commutation a semi-conducteur Granted FR2473790A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (2)

Publication Number Publication Date
FR2473790A1 true FR2473790A1 (fr) 1981-07-17
FR2473790B1 FR2473790B1 (da) 1985-03-08

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8027441A Granted FR2473790A1 (fr) 1979-12-28 1980-12-24 Dispositif de commutation a semi-conducteur

Country Status (21)

Country Link
JP (1) JPS56103467A (da)
KR (1) KR840002413B1 (da)
AU (1) AU534874B2 (da)
BE (1) BE886821A (da)
CA (1) CA1145057A (da)
CH (1) CH652863A5 (da)
DD (1) DD156039A5 (da)
DE (1) DE3048702A1 (da)
DK (1) DK549780A (da)
ES (1) ES498097A0 (da)
FR (1) FR2473790A1 (da)
GB (1) GB2066569B (da)
HK (1) HK69684A (da)
HU (1) HU181246B (da)
IE (1) IE50697B1 (da)
IL (1) IL61780A (da)
IT (1) IT1134896B (da)
NL (1) NL8007051A (da)
PL (1) PL228665A1 (da)
SE (1) SE453621B (da)
SG (1) SG35184G (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
DE2433981A1 (de) * 1973-07-23 1975-02-13 Hitachi Ltd Halbleitersprechpfadschalter
US4074293A (en) * 1971-08-26 1978-02-14 Dionics, Inc. High voltage pn junction and semiconductive devices employing same
FR2412946A1 (fr) * 1977-12-20 1979-07-20 Philips Nv Dispositif semi-conducteur muni d'une diode-pin commandee, et circuit comportant une telle diode
WO1980001337A1 (en) * 1978-12-20 1980-06-26 Western Electric Co High voltage dielectrically isolated solid-state switch

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
JPS5135114B1 (da) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US4074293A (en) * 1971-08-26 1978-02-14 Dionics, Inc. High voltage pn junction and semiconductive devices employing same
DE2433981A1 (de) * 1973-07-23 1975-02-13 Hitachi Ltd Halbleitersprechpfadschalter
FR2412946A1 (fr) * 1977-12-20 1979-07-20 Philips Nv Dispositif semi-conducteur muni d'une diode-pin commandee, et circuit comportant une telle diode
WO1980001337A1 (en) * 1978-12-20 1980-06-26 Western Electric Co High voltage dielectrically isolated solid-state switch

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CONTROL ENGINEERING, vol. 27, no. 9, septembre 1980, ST. PONTIAC ILLINOIS (US) *

Also Published As

Publication number Publication date
DK549780A (da) 1981-06-29
KR830004678A (ko) 1983-07-16
IE50697B1 (en) 1986-06-25
IT8026947A0 (it) 1980-12-24
HU181246B (en) 1983-06-28
JPS56103467A (en) 1981-08-18
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
PL228665A1 (da) 1981-09-04
ES8201376A1 (es) 1981-12-16
BE886821A (fr) 1981-04-16
CA1145057A (en) 1983-04-19
SE8008851L (sv) 1981-06-29
SE453621B (sv) 1988-02-15
IL61780A (en) 1983-07-31
IT1134896B (it) 1986-08-20
CH652863A5 (de) 1985-11-29
DE3048702A1 (de) 1981-09-10
FR2473790B1 (da) 1985-03-08
ES498097A0 (es) 1981-12-16
SG35184G (en) 1985-02-08
DD156039A5 (de) 1982-07-21
KR840002413B1 (ko) 1984-12-27
AU534874B2 (en) 1984-02-16
HK69684A (en) 1984-09-14
GB2066569A (en) 1981-07-08
AU6544980A (en) 1981-07-02
NL8007051A (nl) 1981-07-16
GB2066569B (en) 1983-09-14

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