CH652863A5 - Schaltvorrichtung mit einem substrat aus halbleitermaterial und schaltereinrichtung mit mehreren schaltvorrichtungen. - Google Patents

Schaltvorrichtung mit einem substrat aus halbleitermaterial und schaltereinrichtung mit mehreren schaltvorrichtungen. Download PDF

Info

Publication number
CH652863A5
CH652863A5 CH9424/80A CH942480A CH652863A5 CH 652863 A5 CH652863 A5 CH 652863A5 CH 9424/80 A CH9424/80 A CH 9424/80A CH 942480 A CH942480 A CH 942480A CH 652863 A5 CH652863 A5 CH 652863A5
Authority
CH
Switzerland
Prior art keywords
zone
semiconductor body
gate
substrate
zones
Prior art date
Application number
CH9424/80A
Other languages
German (de)
English (en)
Inventor
Adrian Ralph Hartman
Terence James Riley
Peter William Shackle
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH652863A5 publication Critical patent/CH652863A5/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
CH9424/80A 1979-12-28 1980-12-19 Schaltvorrichtung mit einem substrat aus halbleitermaterial und schaltereinrichtung mit mehreren schaltvorrichtungen. CH652863A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (1)

Publication Number Publication Date
CH652863A5 true CH652863A5 (de) 1985-11-29

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
CH9424/80A CH652863A5 (de) 1979-12-28 1980-12-19 Schaltvorrichtung mit einem substrat aus halbleitermaterial und schaltereinrichtung mit mehreren schaltvorrichtungen.

Country Status (21)

Country Link
JP (1) JPS56103467A (da)
KR (1) KR840002413B1 (da)
AU (1) AU534874B2 (da)
BE (1) BE886821A (da)
CA (1) CA1145057A (da)
CH (1) CH652863A5 (da)
DD (1) DD156039A5 (da)
DE (1) DE3048702A1 (da)
DK (1) DK549780A (da)
ES (1) ES498097A0 (da)
FR (1) FR2473790A1 (da)
GB (1) GB2066569B (da)
HK (1) HK69684A (da)
HU (1) HU181246B (da)
IE (1) IE50697B1 (da)
IL (1) IL61780A (da)
IT (1) IT1134896B (da)
NL (1) NL8007051A (da)
PL (1) PL228665A1 (da)
SE (1) SE453621B (da)
SG (1) SG35184G (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
JPS5135114B1 (da) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (da) * 1973-07-23 1975-04-10
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
GB2049283B (en) * 1978-12-20 1983-07-27 Western Electric Co High voltage dielectrically isolated solid-state switch

Also Published As

Publication number Publication date
ES8201376A1 (es) 1981-12-16
ES498097A0 (es) 1981-12-16
DD156039A5 (de) 1982-07-21
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
GB2066569A (en) 1981-07-08
IT1134896B (it) 1986-08-20
KR830004678A (ko) 1983-07-16
HK69684A (en) 1984-09-14
FR2473790A1 (fr) 1981-07-17
FR2473790B1 (da) 1985-03-08
SG35184G (en) 1985-02-08
DE3048702A1 (de) 1981-09-10
IE50697B1 (en) 1986-06-25
KR840002413B1 (ko) 1984-12-27
SE8008851L (sv) 1981-06-29
GB2066569B (en) 1983-09-14
AU6544980A (en) 1981-07-02
BE886821A (fr) 1981-04-16
NL8007051A (nl) 1981-07-16
PL228665A1 (da) 1981-09-04
IT8026947A0 (it) 1980-12-24
JPS56103467A (en) 1981-08-18
IL61780A (en) 1983-07-31
SE453621B (sv) 1988-02-15
AU534874B2 (en) 1984-02-16
DK549780A (da) 1981-06-29
CA1145057A (en) 1983-04-19
HU181246B (en) 1983-06-28

Similar Documents

Publication Publication Date Title
EP0868750B1 (de) Halbleiteranordnungen zur strombegrenzung
DE102015111371B4 (de) Halbleiterbauelement mit einem schaltbaren und einem nicht schaltbaren Diodengebiet
DE102014110366B4 (de) Mos-leistungstransistor mit integriertem gatewiderstand
DE69305909T2 (de) Leistungsanordnung mit isoliertem Gate-Kontakt-Gebiet
DE102004022455B4 (de) Bipolartransistor mit isolierter Steuerelektrode
DE19811297A1 (de) MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
EP0043009A2 (de) Steuerbarer Halbleiterschalter
DE102011082290A1 (de) Lateraler bipolartransistor mit isolierter gate-elektrode
DE2727405A1 (de) Feldgesteuerter thyristor mit eingebettetem gitter
DE68904343T2 (de) Bipolarer transistor mit isolierter steuerelektrode.
DE1489894B2 (de) In zwei richtungen schaltbares halbleiterbauelement
DE3924902A1 (de) Verfahren zur herstellung einer metall-oxid-halbleitervorrichtung
DE19528998A1 (de) Bidirektionaler Halbleiterschalter und Verfahren zu seiner Steuerung
DE69930715T2 (de) Elektronische Halbleiterleistung mit integrierter Diode
EP0520355A1 (de) Mittels Steuerelektrode abschaltbares Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
EP0992069A1 (de) Halbleiter-strombegrenzer
EP0978145A1 (de) Halbleiter strombegrenzer und deren verwendung
DE4228832C2 (de) Feldeffekt-gesteuertes Halbleiterbauelement
DE4310606C2 (de) GTO-Thyristoren
DE69122902T2 (de) Halbleiteranordnung mit einem Thyristor
DE19534388B4 (de) IGBT-Transistorbauteil
EP0249122A1 (de) Abschaltbares Leistungshalbleiterbauelement
DE2425364A1 (de) Gate-gesteuerter halbleitergleichrichter
EP0206350A2 (de) Thyristor mit verminderter Mittelzonendicke
DE4342482C2 (de) Schnelle Leistungshalbleiterbauelemente

Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased