JPS56103467A - High voltage solid state switching device - Google Patents

High voltage solid state switching device

Info

Publication number
JPS56103467A
JPS56103467A JP18942880A JP18942880A JPS56103467A JP S56103467 A JPS56103467 A JP S56103467A JP 18942880 A JP18942880 A JP 18942880A JP 18942880 A JP18942880 A JP 18942880A JP S56103467 A JPS56103467 A JP S56103467A
Authority
JP
Japan
Prior art keywords
high voltage
switching device
solid state
state switching
voltage solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18942880A
Other languages
English (en)
Japanese (ja)
Inventor
Ralph Hartmann Adrian
James Riley Terrence
William Shackle Peter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS56103467A publication Critical patent/JPS56103467A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Bipolar Transistors (AREA)
JP18942880A 1979-12-28 1980-12-27 High voltage solid state switching device Pending JPS56103467A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (1)

Publication Number Publication Date
JPS56103467A true JPS56103467A (en) 1981-08-18

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18942880A Pending JPS56103467A (en) 1979-12-28 1980-12-27 High voltage solid state switching device

Country Status (21)

Country Link
JP (1) JPS56103467A (da)
KR (1) KR840002413B1 (da)
AU (1) AU534874B2 (da)
BE (1) BE886821A (da)
CA (1) CA1145057A (da)
CH (1) CH652863A5 (da)
DD (1) DD156039A5 (da)
DE (1) DE3048702A1 (da)
DK (1) DK549780A (da)
ES (1) ES498097A0 (da)
FR (1) FR2473790A1 (da)
GB (1) GB2066569B (da)
HK (1) HK69684A (da)
HU (1) HU181246B (da)
IE (1) IE50697B1 (da)
IL (1) IL61780A (da)
IT (1) IT1134896B (da)
NL (1) NL8007051A (da)
PL (1) PL228665A1 (da)
SE (1) SE453621B (da)
SG (1) SG35184G (da)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114867A (ja) * 1982-12-10 1984-07-03 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド 個体スイツチ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4718282A (da) * 1971-02-03 1972-09-13
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
JPS5135114B1 (da) * 1970-12-28 1976-09-30
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (da) * 1973-07-23 1975-04-10
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
GB2049283B (en) * 1978-12-20 1983-07-27 Western Electric Co High voltage dielectrically isolated solid-state switch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4718282A (da) * 1971-02-03 1972-09-13
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114867A (ja) * 1982-12-10 1984-07-03 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド 個体スイツチ

Also Published As

Publication number Publication date
FR2473790A1 (fr) 1981-07-17
DK549780A (da) 1981-06-29
KR830004678A (ko) 1983-07-16
IE50697B1 (en) 1986-06-25
IT8026947A0 (it) 1980-12-24
HU181246B (en) 1983-06-28
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
PL228665A1 (da) 1981-09-04
ES8201376A1 (es) 1981-12-16
BE886821A (fr) 1981-04-16
CA1145057A (en) 1983-04-19
SE8008851L (sv) 1981-06-29
SE453621B (sv) 1988-02-15
IL61780A (en) 1983-07-31
IT1134896B (it) 1986-08-20
CH652863A5 (de) 1985-11-29
DE3048702A1 (de) 1981-09-10
FR2473790B1 (da) 1985-03-08
ES498097A0 (es) 1981-12-16
SG35184G (en) 1985-02-08
DD156039A5 (de) 1982-07-21
KR840002413B1 (ko) 1984-12-27
AU534874B2 (en) 1984-02-16
HK69684A (en) 1984-09-14
GB2066569A (en) 1981-07-08
AU6544980A (en) 1981-07-02
NL8007051A (nl) 1981-07-16
GB2066569B (en) 1983-09-14

Similar Documents

Publication Publication Date Title
JPS55143722A (en) Switching device
JPS561591A (en) Semiconductor switching device
GB2035740B (en) Switching high voltages
JPS562735A (en) Switching device
JPS57210527A (en) Disconnecting switch for high voltage device
JPS5619813A (en) Switching device
JPS5617416A (en) Nonninstantaneous break voltage switching circuit
JPS573328A (en) High voltage power switching device
JPS55139025A (en) Switching device trouble prenotifying device
JPS56103467A (en) High voltage solid state switching device
JPS55139728A (en) Switching device
IL58970A0 (en) High-voltage solid-state switching device
JPS5626313A (en) Threeesignal switching device
DE3062021D1 (en) High voltage circuit breaker
GB2047964B (en) Electric switching devices
JPS5630753A (en) Semiconductor switching device
JPS5596514A (en) Switching device
JPS55111027A (en) Switching device
JPS55159530A (en) Switching device
JPS55104031A (en) Switching device
JPS55136414A (en) Piezooelectric switching device
JPS5619814A (en) Switching device
JPS5619815A (en) Switching device
JPS55109341A (en) Switching device
JPS5658740A (en) Voltage switching circuit