FR3021804B1 - Cellule memoire non volatile duale comprenant un transistor d'effacement - Google Patents

Cellule memoire non volatile duale comprenant un transistor d'effacement

Info

Publication number
FR3021804B1
FR3021804B1 FR1454891A FR1454891A FR3021804B1 FR 3021804 B1 FR3021804 B1 FR 3021804B1 FR 1454891 A FR1454891 A FR 1454891A FR 1454891 A FR1454891 A FR 1454891A FR 3021804 B1 FR3021804 B1 FR 3021804B1
Authority
FR
France
Prior art keywords
memory cell
volatile memory
erasing transistor
dual non
dual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1454891A
Other languages
English (en)
Other versions
FR3021804A1 (fr
Inventor
Rosa Francesco La
Stephan Niel
Arnaud Regnier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1454891A priority Critical patent/FR3021804B1/fr
Priority to US14/724,229 priority patent/US9484107B2/en
Publication of FR3021804A1 publication Critical patent/FR3021804A1/fr
Priority to US15/276,462 priority patent/US9613709B2/en
Application granted granted Critical
Publication of FR3021804B1 publication Critical patent/FR3021804B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
FR1454891A 2014-05-28 2014-05-28 Cellule memoire non volatile duale comprenant un transistor d'effacement Expired - Fee Related FR3021804B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1454891A FR3021804B1 (fr) 2014-05-28 2014-05-28 Cellule memoire non volatile duale comprenant un transistor d'effacement
US14/724,229 US9484107B2 (en) 2014-05-28 2015-05-28 Dual non-volatile memory cell comprising an erase transistor
US15/276,462 US9613709B2 (en) 2014-05-28 2016-09-26 Dual non-volatile memory cell comprising an erase transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1454891A FR3021804B1 (fr) 2014-05-28 2014-05-28 Cellule memoire non volatile duale comprenant un transistor d'effacement

Publications (2)

Publication Number Publication Date
FR3021804A1 FR3021804A1 (fr) 2015-12-04
FR3021804B1 true FR3021804B1 (fr) 2017-09-01

Family

ID=51905218

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1454891A Expired - Fee Related FR3021804B1 (fr) 2014-05-28 2014-05-28 Cellule memoire non volatile duale comprenant un transistor d'effacement

Country Status (2)

Country Link
US (2) US9484107B2 (fr)
FR (1) FR3021804B1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3021804B1 (fr) 2014-05-28 2017-09-01 Stmicroelectronics Rousset Cellule memoire non volatile duale comprenant un transistor d'effacement
FR3021803B1 (fr) 2014-05-28 2017-10-13 Stmicroelectronics Rousset Cellules memoire jumelles accessibles individuellement en lecture
FR3025353B1 (fr) * 2014-09-03 2016-09-09 Stmicroelectronics Rousset Memoire non volatile composite a effacement par page ou par mot
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
FR3048114B1 (fr) 2016-02-22 2018-03-30 Stmicroelectronics (Rousset) Sas Procede d'amelioration de l'operation d'ecriture dans une memoire eeprom et dispositif correspondant
TWI607445B (zh) * 2016-03-28 2017-12-01 卡比科技有限公司 非揮發性記憶體裝置及其運作方法
FR3059458B1 (fr) 2016-11-25 2019-03-29 Stmicroelectronics (Rousset) Sas Dispositif compact de memoire non volatile du type a piegeages de charge dans une interface dielectrique
DE102019117751A1 (de) 2018-08-29 2020-03-05 Taiwan Semiconductor Manufacturing Co. Ltd. Flash-speicher-struktur mit verbessertem floating-gate
US10734398B2 (en) 2018-08-29 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory structure with enhanced floating gate
US11387242B2 (en) 2020-03-03 2022-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory (NVM) cell structure to increase reliability
WO2022241796A1 (fr) * 2021-05-21 2022-11-24 华为技术有限公司 Mémoire ferroélectrique et son procédé de commande, et dispositif électronique
US20250126781A1 (en) * 2023-10-11 2025-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including a multiple-time programmable memory cell
FR3155116A1 (fr) * 2023-11-02 2025-05-09 Stmicroelectronics International N.V. circuit intégré comportant une cellule mémoire et procédé de fabrication correspondant
FR3156239A1 (fr) * 2023-12-01 2025-06-06 Stmicroelectronics International N.V. Procédé de fabrication d’un circuit intégré et circuit intégré correspondant
FR3158586A1 (fr) * 2024-01-19 2025-07-25 Stmicroelectronics International N.V. Procédé de fabrication d’un circuit intégré et circuit intégré correspondant

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Publication number Priority date Publication date Assignee Title
US5182725A (en) 1987-11-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor
US6433382B1 (en) 1995-04-06 2002-08-13 Motorola, Inc. Split-gate vertically oriented EEPROM device and process
TW546778B (en) * 2001-04-20 2003-08-11 Koninkl Philips Electronics Nv Two-transistor flash cell
FR2844090A1 (fr) * 2002-08-27 2004-03-05 St Microelectronics Sa Cellule memoire pour registre non volatile a lecture rapide
US6788576B2 (en) 2002-10-28 2004-09-07 Tower Semiconductor Ltd. Complementary non-volatile memory cell
US6828618B2 (en) * 2002-10-30 2004-12-07 Freescale Semiconductor, Inc. Split-gate thin-film storage NVM cell
US6894339B2 (en) 2003-01-02 2005-05-17 Actrans System Inc. Flash memory with trench select gate and fabrication process
US7358134B2 (en) * 2003-09-15 2008-04-15 Powerchip Semiconductor Corp. Split gate flash memory cell and manufacturing method thereof
US7126188B2 (en) 2004-05-27 2006-10-24 Skymedi Corporation Vertical split gate memory cell and manufacturing method thereof
US8139408B2 (en) 2006-09-05 2012-03-20 Semiconductor Components Industries, L.L.C. Scalable electrically eraseable and programmable memory
KR100752192B1 (ko) * 2006-09-06 2007-08-27 동부일렉트로닉스 주식회사 단일 폴리 구조의 플래시 메모리 소자 및 그 제조 방법
US7696044B2 (en) * 2006-09-19 2010-04-13 Sandisk Corporation Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7723774B2 (en) * 2007-07-10 2010-05-25 Silicon Storage Technology, Inc. Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture
US7800159B2 (en) 2007-10-24 2010-09-21 Silicon Storage Technology, Inc. Array of contactless non-volatile memory cells
US8072811B2 (en) * 2008-05-07 2011-12-06 Aplus Flash Technology, Inc, NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory array
KR20100115612A (ko) 2009-04-20 2010-10-28 삼성전자주식회사 프로그램 디스터브를 줄일 수 있는 비휘발성 반도체 메모리 장치 및 이 장치의 프로그램 방법
US8355287B2 (en) * 2009-08-25 2013-01-15 Aplus Flash Technology, Inc. Method and apparatus for operation of a NAND-like dual charge retaining transistor NOR flash memory device
US8958245B2 (en) * 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
US8582363B2 (en) * 2011-01-31 2013-11-12 Aplus Flash Technology, Inc. Method and apparatus for management of over-erasure in NAND-based NOR-type flash memory
WO2013079020A1 (fr) 2011-12-02 2013-06-06 Tsinghua University Structure matricielle de mémoire flash non-ou, mémoire flash non volatile mélangée, et système de mémoire comprenant ces mémoires
FR2987696B1 (fr) 2012-03-05 2014-11-21 St Microelectronics Rousset Procede de lecture ecriture de cellules memoire non volatiles
US8901634B2 (en) 2012-03-05 2014-12-02 Stmicroelectronics (Rousset) Sas Nonvolatile memory cells with a vertical selection gate of variable depth
JP5972700B2 (ja) 2012-07-31 2016-08-17 ルネサスエレクトロニクス株式会社 メモリ装置
US20140198583A1 (en) 2013-01-17 2014-07-17 Infineon Technologies Ag Method and System for Reducing the Size of Nonvolatile Memories
TW201508753A (zh) * 2013-08-29 2015-03-01 Chrong-Jung Lin 記憶體元件、記憶體陣列與其操作方法
FR3021804B1 (fr) 2014-05-28 2017-09-01 Stmicroelectronics Rousset Cellule memoire non volatile duale comprenant un transistor d'effacement
FR3021803B1 (fr) 2014-05-28 2017-10-13 Stmicroelectronics Rousset Cellules memoire jumelles accessibles individuellement en lecture

Also Published As

Publication number Publication date
US20150348640A1 (en) 2015-12-03
US9613709B2 (en) 2017-04-04
US20170011804A1 (en) 2017-01-12
US9484107B2 (en) 2016-11-01
FR3021804A1 (fr) 2015-12-04

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