IE792369L - Switching circuit - Google Patents

Switching circuit

Info

Publication number
IE792369L
IE792369L IE792369A IE236979A IE792369L IE 792369 L IE792369 L IE 792369L IE 792369 A IE792369 A IE 792369A IE 236979 A IE236979 A IE 236979A IE 792369 L IE792369 L IE 792369L
Authority
IE
Ireland
Prior art keywords
gated diode
diode switch
gds31
gds1
cathode
Prior art date
Application number
IE792369A
Other versions
IE49229B1 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE792369L publication Critical patent/IE792369L/en
Publication of IE49229B1 publication Critical patent/IE49229B1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Landscapes

  • Electronic Switches (AREA)
  • Keying Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Details Of Connecting Devices For Male And Female Coupling (AREA)

Abstract

A gated diode switch (GDS1, GDS31) requires a voltage applied to the gate which is more positive than that of the anode or cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must be sourced into the gate of the switch to break current flow. The use of a second gated diode switch (GDS2, GDS32) coupled by the cathode (terminal 222, 322) thereof to the gate of a gated diode switch (GDS1, GDS31) which is to be controlled provides a high voltage and current capability circuitry for cutting off (interrupting) or inhibiting current flow through the gated diode switch (GDS1, GDS31). The state of a gated diode switch (GDS1, GDS31) is thus controlled by a second gated diode switch (GDS2, GDS32). The state of the second gated diode switch is controlled by a voltage control circuit having only relatively modest current handling capability. [GB2048599A]
IE2369/79A 1978-12-20 1979-12-14 Switching circuit IE49229B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97202378A 1978-12-20 1978-12-20
US97202478A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
IE792369L true IE792369L (en) 1980-06-20
IE49229B1 IE49229B1 (en) 1985-09-04

Family

ID=27130551

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2369/79A IE49229B1 (en) 1978-12-20 1979-12-14 Switching circuit

Country Status (18)

Country Link
JP (1) JPS55501043A (en)
KR (1) KR830001097B1 (en)
AU (1) AU524716B2 (en)
CH (1) CH660820A5 (en)
DD (1) DD200547A5 (en)
ES (1) ES487067A1 (en)
FR (1) FR2445663A1 (en)
GB (1) GB2048599B (en)
HK (1) HK69184A (en)
HU (1) HU180115B (en)
IE (1) IE49229B1 (en)
IL (1) IL59013A (en)
IN (1) IN154029B (en)
IT (1) IT1126604B (en)
NL (1) NL7920198A (en)
PL (1) PL127058B1 (en)
SE (1) SE420254B (en)
WO (1) WO1980001347A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271700A (en) * 1963-03-01 1966-09-06 Gen Electric Solid state switching circuits
US3596114A (en) * 1969-11-25 1971-07-27 Honeywell Inc Hall effect contactless switch with prebiased schmitt trigger
US3793581A (en) * 1972-04-19 1974-02-19 Us Navy Solid state phase controlled switch
JPS5210012A (en) * 1975-07-14 1977-01-26 Hitachi Ltd Pnpn switch driving circuit
US4112315A (en) * 1975-09-08 1978-09-05 Hitachi, Ltd. Semiconductor switch circuit
UST957008I4 (en) * 1976-04-12 1977-04-05 Rca Corporation Switching circuit with accurate current threshold
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid

Also Published As

Publication number Publication date
DD200547A5 (en) 1983-05-11
PL127058B1 (en) 1983-09-30
CH660820A5 (en) 1987-06-15
SE8005702L (en) 1980-08-13
IT1126604B (en) 1986-05-21
AU5386579A (en) 1980-06-26
IL59013A (en) 1982-07-30
FR2445663A1 (en) 1980-07-25
GB2048599A (en) 1980-12-10
ES487067A1 (en) 1980-09-16
IL59013A0 (en) 1980-03-31
FR2445663B1 (en) 1983-11-25
NL7920198A (en) 1980-10-31
HU180115B (en) 1983-02-28
HK69184A (en) 1984-09-14
SE420254B (en) 1981-09-21
IE49229B1 (en) 1985-09-04
IN154029B (en) 1984-09-08
PL220497A1 (en) 1980-09-08
JPS55501043A (en) 1980-11-27
GB2048599B (en) 1983-04-20
WO1980001347A1 (en) 1980-06-26
IT7928207A0 (en) 1979-12-19
KR830001097B1 (en) 1983-06-02
AU524716B2 (en) 1982-09-30

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Legal Events

Date Code Title Description
MM4A Patent lapsed