IL130973A - Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage - Google Patents

Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage

Info

Publication number: IL130973A
Authority: IL; Israel
Prior art keywords: low; semiconductor diodes; devices; voltage drop; reverse current
Prior art date: 1997-01-23

Application number

IL13097398A

Other languages

English (en)

Other versions

IL130973A0 (en

Original Assignee

Vram Technologies Llc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-01-23

Filing date

1998-01-19

Publication date

2003-03-12

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25142076&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IL130973(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1998-01-19 Application filed by Vram Technologies Llc filed Critical Vram Technologies Llc

2001-01-28 Publication of IL130973A0 publication Critical patent/IL130973A0/xx

2003-03-12 Publication of IL130973A publication Critical patent/IL130973A/xx

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/045—Manufacture or treatment of PN junction diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs

Landscapes

Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Electrodes Of Semiconductors (AREA)
Semiconductor Integrated Circuits (AREA)
Bipolar Transistors (AREA)
Electronic Switches (AREA)

IL13097398A 1997-01-23 1998-01-19 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage IL130973A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US08/787,627 US5825079A (en)	1997-01-23	1997-01-23	Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
PCT/US1998/000843 WO1998033218A1 (fr)	1997-01-23	1998-01-19	Diodes a semiconducteur a faible chute de tension directe et faible courant de fuite inverse

Publications (2)

Publication Number	Publication Date
IL130973A0 IL130973A0 (en)	2001-01-28
IL130973A true IL130973A (en)	2003-03-12

Family

ID=25142076

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL13097398A IL130973A (en)	1997-01-23	1998-01-19	Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage

Country Status (12)

Country	Link
US (1)	US5825079A (fr)
EP (1)	EP0956597B1 (fr)
JP (1)	JP4058541B2 (fr)
KR (1)	KR100453264B1 (fr)
CN (1)	CN1135633C (fr)
AT (1)	ATE467906T1 (fr)
AU (1)	AU6027698A (fr)
CA (1)	CA2278308C (fr)
DE (1)	DE69841658D1 (fr)
IL (1)	IL130973A (fr)
TW (1)	TW368757B (fr)
WO (1)	WO1998033218A1 (fr)

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US6420225B1 (en)	1999-04-01	2002-07-16	Apd Semiconductor, Inc.	Method of fabricating power rectifier device
US6186408B1 (en)	1999-05-28	2001-02-13	Advanced Power Devices, Inc.	High cell density power rectifier
US6420757B1 (en)	1999-09-14	2002-07-16	Vram Technologies, Llc	Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6433370B1 (en)	2000-02-10	2002-08-13	Vram Technologies, Llc	Method and apparatus for cylindrical semiconductor diodes
US6667237B1 (en)	2000-10-12	2003-12-23	Vram Technologies, Llc	Method and apparatus for patterning fine dimensions
US6580150B1 (en)	2000-11-13	2003-06-17	Vram Technologies, Llc	Vertical junction field effect semiconductor diodes
US6537860B2 (en)	2000-12-18	2003-03-25	Apd Semiconductor, Inc.	Method of fabricating power VLSI diode devices
US6537921B2 (en) *	2001-05-23	2003-03-25	Vram Technologies, Llc	Vertical metal oxide silicon field effect semiconductor diodes
US6515330B1 (en)	2002-01-02	2003-02-04	Apd Semiconductor, Inc.	Power device having vertical current path with enhanced pinch-off for current limiting
TW548850B (en) *	2002-05-29	2003-08-21	Toppoly Optoelectronics Corp	Low-temperature polysilicon TFT of LDD structure and process for producing same
US7030680B2 (en) *	2003-02-26	2006-04-18	Integrated Discrete Devices, Llc	On chip power supply
US6958275B2 (en) *	2003-03-11	2005-10-25	Integrated Discrete Devices, Llc	MOSFET power transistors and methods
US7972915B2 (en) *	2005-11-29	2011-07-05	The Hong Kong University Of Science And Technology	Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
US8044432B2 (en) *	2005-11-29	2011-10-25	The Hong Kong University Of Science And Technology	Low density drain HEMTs
US7932539B2 (en) *	2005-11-29	2011-04-26	The Hong Kong University Of Science And Technology	Enhancement-mode III-N devices, circuits, and methods
US8435873B2 (en)	2006-06-08	2013-05-07	Texas Instruments Incorporated	Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
US8502323B2 (en) *	2007-08-03	2013-08-06	The Hong Kong University Of Science And Technology	Reliable normally-off III-nitride active device structures, and related methods and systems
EP2232559B1 (fr)	2007-09-26	2019-05-15	STMicroelectronics N.V.	Redresseur à effet de champ ajustable
US8148748B2 (en)	2007-09-26	2012-04-03	Stmicroelectronics N.V.	Adjustable field effect rectifier
US8643055B2 (en)	2007-09-26	2014-02-04	Stmicroelectronics N.V.	Series current limiter device
US8633521B2 (en)	2007-09-26	2014-01-21	Stmicroelectronics N.V.	Self-bootstrapping field effect diode structures and methods
US8076699B2 (en) *	2008-04-02	2011-12-13	The Hong Kong Univ. Of Science And Technology	Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US20100084687A1 (en) *	2008-10-03	2010-04-08	The Hong Kong University Of Science And Technology	Aluminum gallium nitride/gallium nitride high electron mobility transistors
CN102332473A (zh) *	2011-09-20	2012-01-25	彭艳兵	一种低压降有源二极管
US9337310B2 (en)	2014-05-05	2016-05-10	Globalfoundries Inc.	Low leakage, high frequency devices
US9861828B2 (en)	2014-09-08	2018-01-09	Medtronic, Inc.	Monitoring multi-cell power source of an implantable medical device
US9861827B2 (en)	2014-09-08	2018-01-09	Medtronic, Inc.	Implantable medical devices having multi-cell power sources
US9643025B2 (en)	2014-09-08	2017-05-09	Medtronic, Inc.	Multi-primary transformer charging circuits for implantable medical devices
US9579517B2 (en)	2014-09-08	2017-02-28	Medtronic, Inc.	Transformer-based charging circuits for implantable medical devices
US9724528B2 (en)	2014-09-08	2017-08-08	Medtronic, Inc.	Multiple transformer charging circuits for implantable medical devices
US9604071B2 (en)	2014-09-08	2017-03-28	Medtronic, Inc.	Implantable medical devices having multi-cell power sources
US9539435B2 (en)	2014-09-08	2017-01-10	Medtronic, Inc.	Transthoracic protection circuit for implantable medical devices
US10050115B2 (en)	2014-12-30	2018-08-14	Globalfoundries Inc.	Tapered gate oxide in LDMOS devices
US10596648B2 (en)	2017-05-08	2020-03-24	Snap-On Incorporated	Internal thread chase

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1997
- 1997-01-23 US US08/787,627 patent/US5825079A/en not_active Expired - Lifetime
1998
- 1998-01-19 JP JP53204598A patent/JP4058541B2/ja not_active Expired - Fee Related
- 1998-01-19 AU AU60276/98A patent/AU6027698A/en not_active Abandoned
- 1998-01-19 KR KR10-1999-7006624A patent/KR100453264B1/ko not_active Expired - Fee Related
- 1998-01-19 DE DE69841658T patent/DE69841658D1/de not_active Expired - Lifetime
- 1998-01-19 WO PCT/US1998/000843 patent/WO1998033218A1/fr not_active Ceased
- 1998-01-19 CN CNB98804966XA patent/CN1135633C/zh not_active Expired - Fee Related
- 1998-01-19 CA CA002278308A patent/CA2278308C/fr not_active Expired - Fee Related
- 1998-01-19 AT AT98903526T patent/ATE467906T1/de not_active IP Right Cessation
- 1998-01-19 EP EP98903526A patent/EP0956597B1/fr not_active Expired - Lifetime
- 1998-01-19 IL IL13097398A patent/IL130973A/xx not_active IP Right Cessation
- 1998-03-20 TW TW087100713A patent/TW368757B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
JP2001523393A (ja)	2001-11-20
WO1998033218A1 (fr)	1998-07-30
TW368757B (en)	1999-09-01
ATE467906T1 (de)	2010-05-15
KR20000070391A (ko)	2000-11-25
CA2278308C (fr)	2007-12-11
JP4058541B2 (ja)	2008-03-12
DE69841658D1 (de)	2010-06-24
EP0956597B1 (fr)	2010-05-12
CN1135633C (zh)	2004-01-21
US5825079A (en)	1998-10-20
AU6027698A (en)	1998-08-18
KR100453264B1 (ko)	2004-10-15
CN1255239A (zh)	2000-05-31
EP0956597A1 (fr)	1999-11-17
IL130973A0 (en)	2001-01-28
CA2278308A1 (fr)	1998-07-30
EP0956597A4 (fr)	2000-08-16

Legal Events

Date	Code	Title
2003-09-17	FF	Patent granted
2003-11-23	KB	Patent renewed
2004-02-19	KB	Patent renewed
2008-02-10	KB	Patent renewed
2012-02-29	KB	Patent renewed
2016-08-31	MM9K	Patent not in force due to non-payment of renewal fees

Publication	Publication Date	Title
TW368757B (en)	1999-09-01	Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
KR100315843B1 (ko)	2001-12-12	애벌런치 증식을 증가시킨 전계 효과 트랜지스터 및 그 제조방법
US4866495A (en)	1989-09-12	High power MOSFET and integrated control circuit therefor for high-side switch application
EP0805499A3 (fr)	1997-11-26	Transistor à effet de champ MIS à tenue en tension élevée et circuit intégré semi-conducteur
US6876041B2 (en)	2005-04-05	ESD protection component
IL158845A0 (en)	2004-05-12	Vertical metal oxide semiconductor field-effect diodes
US6503782B2 (en)	2003-01-07	Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors
ATE539450T1 (de)	2012-01-15	Siliziumkarbid leistungs-mosfets mit kurzgeschlossenem kanal und verfahren zur deren herstellung
KR970054445A (ko)	1997-07-31	고전압 모스전계효과트렌지스터의 구조 및 그 제조방법
WO2004061974A3 (fr)	2004-09-23	Transistors mos de puissance limites, en carbure de silicium, de type jfet vertical, et procedes de fabrication
EP1143526A3 (fr)	2005-09-28	Transistor à effet de champ et sa méthode de fabrication
JP2822961B2 (ja)	1998-11-11	半導体装置
WO1998005075A3 (fr)	1998-03-05	Composant a semi-conducteur a caracteristiques courant/tension lineaires
US5686754A (en)	1997-11-11	Polysilicon field ring structure for power IC
KR100313287B1 (ko)	2002-08-09	반도체소자
CN101681840A (zh)	2010-03-24	结势垒肖特基二极管
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