IL137070A - Plasma device that includes a non-magnetically operated metal unit between the AC alarm source and the plasma - Google Patents
Plasma device that includes a non-magnetically operated metal unit between the AC alarm source and the plasmaInfo
- Publication number
- IL137070A IL137070A IL13707098A IL13707098A IL137070A IL 137070 A IL137070 A IL 137070A IL 13707098 A IL13707098 A IL 13707098A IL 13707098 A IL13707098 A IL 13707098A IL 137070 A IL137070 A IL 137070A
- Authority
- IL
- Israel
- Prior art keywords
- plasma
- chamber
- coil
- plasma device
- metal member
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 148
- 239000002184 metal Substances 0.000 title claims abstract description 148
- 230000005284 excitation Effects 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims description 31
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 230000005672 electromagnetic field Effects 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 60
- 238000000151 deposition Methods 0.000 abstract description 12
- 238000004140 cleaning Methods 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 description 127
- 239000007789 gas Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 20
- 229920000642 polymer Polymers 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910000939 field's metal Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Primary Cells (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/001,512 US6280563B1 (en) | 1997-12-31 | 1997-12-31 | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
| PCT/US1998/027885 WO1999034399A1 (en) | 1997-12-31 | 1998-12-31 | Plasma device including a powered non-magnetic metal member between a plasma ac excitation source and the plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL137070A0 IL137070A0 (en) | 2001-06-14 |
| IL137070A true IL137070A (en) | 2004-01-04 |
Family
ID=21696416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL13707098A IL137070A (en) | 1997-12-31 | 1998-12-31 | Plasma device that includes a non-magnetically operated metal unit between the AC alarm source and the plasma |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6280563B1 (de) |
| EP (1) | EP1044459B1 (de) |
| JP (1) | JP4709376B2 (de) |
| KR (1) | KR100630885B1 (de) |
| AT (1) | ATE240585T1 (de) |
| AU (1) | AU2210299A (de) |
| DE (1) | DE69814687T2 (de) |
| IL (1) | IL137070A (de) |
| TW (1) | TW423020B (de) |
| WO (1) | WO1999034399A1 (de) |
Families Citing this family (66)
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| GB9714341D0 (en) * | 1997-07-09 | 1997-09-10 | Surface Tech Sys Ltd | Plasma processing apparatus |
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| US6447637B1 (en) * | 1999-07-12 | 2002-09-10 | Applied Materials Inc. | Process chamber having a voltage distribution electrode |
| US6564810B1 (en) * | 2000-03-28 | 2003-05-20 | Asm America | Cleaning of semiconductor processing chambers |
| CN1230042C (zh) * | 2000-03-31 | 2005-11-30 | 拉姆研究公司 | 感应耦合等离子体腐蚀装置 |
| US6422173B1 (en) * | 2000-06-30 | 2002-07-23 | Lam Research Corporation | Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system |
| US6531030B1 (en) * | 2000-03-31 | 2003-03-11 | Lam Research Corp. | Inductively coupled plasma etching apparatus |
| US6592710B1 (en) * | 2001-04-12 | 2003-07-15 | Lam Research Corporation | Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator |
| US6685798B1 (en) * | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
| US6716303B1 (en) | 2000-10-13 | 2004-04-06 | Lam Research Corporation | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
| JP3640609B2 (ja) * | 2000-10-16 | 2005-04-20 | アルプス電気株式会社 | プラズマ処理装置,プラズマ処理システムおよびこれらの性能確認システム,検査方法 |
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| JP3591642B2 (ja) * | 2001-02-07 | 2004-11-24 | 株式会社日立製作所 | プラズマ処理装置 |
| JP3680029B2 (ja) * | 2001-08-08 | 2005-08-10 | 三菱重工業株式会社 | 金属薄膜の気相成長方法およびその気相成長装置 |
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| JP3727878B2 (ja) * | 2001-11-14 | 2005-12-21 | 三菱重工業株式会社 | 金属膜作製装置 |
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| KR100879325B1 (ko) * | 2002-03-11 | 2009-01-19 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마처리방법 및 처리장치 |
| JP4013674B2 (ja) * | 2002-07-11 | 2007-11-28 | 松下電器産業株式会社 | プラズマドーピング方法及び装置 |
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| US20040040662A1 (en) * | 2002-08-28 | 2004-03-04 | Manabu Edamura | Plasma processing method and apparatus for etching nonvolatile material |
| US7223321B1 (en) * | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
| US20030047536A1 (en) * | 2002-10-02 | 2003-03-13 | Johnson Wayne L. | Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma |
| US20040163595A1 (en) * | 2003-02-26 | 2004-08-26 | Manabu Edamura | Plasma processing apparatus |
| US20040173314A1 (en) * | 2003-03-05 | 2004-09-09 | Ryoji Nishio | Plasma processing apparatus and method |
| KR101007822B1 (ko) * | 2003-07-14 | 2011-01-13 | 주성엔지니어링(주) | 혼합형 플라즈마 발생 장치 |
| JP4773079B2 (ja) * | 2004-11-26 | 2011-09-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法 |
| KR20060073737A (ko) * | 2004-12-24 | 2006-06-29 | 삼성전자주식회사 | 플라즈마 장치 |
| JP2006216903A (ja) * | 2005-02-07 | 2006-08-17 | Hitachi High-Technologies Corp | プラズマ処理装置 |
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| US7422664B2 (en) * | 2006-02-03 | 2008-09-09 | Applied Materials, Inc. | Method for plasma ignition |
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| US7998307B2 (en) * | 2006-09-12 | 2011-08-16 | Tokyo Electron Limited | Electron beam enhanced surface wave plasma source |
| TW200830941A (en) * | 2007-01-15 | 2008-07-16 | Jehara Corp | Plasma generating apparatus |
| JP2008181710A (ja) * | 2007-01-23 | 2008-08-07 | Canon Inc | プラズマ処理装置及び方法 |
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| WO2011016266A1 (ja) | 2009-08-07 | 2011-02-10 | 株式会社京三製作所 | パルス変調高周波電力制御方法およびパルス変調高周波電源装置 |
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| JP2011124293A (ja) * | 2009-12-09 | 2011-06-23 | Hitachi High-Technologies Corp | プラズマ処理装置 |
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| USD672377S1 (en) * | 2010-03-31 | 2012-12-11 | Tokyo Electron Limited | Dielectric window for plasma processing device |
| US8492980B2 (en) * | 2010-10-28 | 2013-07-23 | Applied Materials, Inc. | Methods for calibrating RF power applied to a plurality of RF coils in a plasma processing system |
| JP5913829B2 (ja) * | 2011-04-21 | 2016-04-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US9490106B2 (en) * | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
| US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
| US9966236B2 (en) | 2011-06-15 | 2018-05-08 | Lam Research Corporation | Powered grid for plasma chamber |
| US9978565B2 (en) | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
| US20130098871A1 (en) * | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
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| KR102171725B1 (ko) * | 2013-06-17 | 2020-10-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 반응기를 위한 강화된 플라즈마 소스 |
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| US20170278680A1 (en) * | 2016-03-28 | 2017-09-28 | Lam Research Corporation | Substrate processing system including coil with rf powered faraday shield |
| JP6889043B2 (ja) * | 2017-06-15 | 2021-06-18 | 株式会社アルバック | プラズマ処理装置 |
| US11521828B2 (en) * | 2017-10-09 | 2022-12-06 | Applied Materials, Inc. | Inductively coupled plasma source |
| CN110491759A (zh) * | 2019-08-21 | 2019-11-22 | 江苏鲁汶仪器有限公司 | 一种等离子体刻蚀系统 |
| CN112786420B (zh) * | 2019-11-07 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其处理基片的方法 |
| CN113113280B (zh) * | 2020-01-09 | 2022-06-10 | 江苏鲁汶仪器有限公司 | 等离子体处理系统及其开合法拉第组件 |
| CN113675063B (zh) * | 2020-05-15 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其导磁组件与方法 |
| US12074390B2 (en) | 2022-11-11 | 2024-08-27 | Tokyo Electron Limited | Parallel resonance antenna for radial plasma control |
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| TW327236B (en) * | 1996-03-12 | 1998-02-21 | Varian Associates | Inductively coupled plasma reactor with faraday-sputter shield |
| KR100471728B1 (ko) * | 1996-04-12 | 2005-03-14 | 가부시끼가이샤 히다치 세이사꾸쇼 | 플라즈마 처리장치 |
| JPH10168565A (ja) * | 1996-12-13 | 1998-06-23 | Mitsubishi Electric Corp | イオン化pvd装置および半導体装置の製造方法 |
| JPH10275694A (ja) * | 1997-03-31 | 1998-10-13 | Hitachi Ltd | プラズマ処理装置及び処理方法 |
| US5948215A (en) * | 1997-04-21 | 1999-09-07 | Tokyo Electron Limited | Method and apparatus for ionized sputtering |
| KR100322330B1 (ko) | 1997-04-21 | 2002-03-18 | 히가시 데츠로 | 재료의 이온 스퍼터링 방법 및 장치 |
| GB9714341D0 (en) * | 1997-07-09 | 1997-09-10 | Surface Tech Sys Ltd | Plasma processing apparatus |
-
1997
- 1997-12-31 US US09/001,512 patent/US6280563B1/en not_active Expired - Lifetime
-
1998
- 1998-12-17 TW TW087121070A patent/TW423020B/zh not_active IP Right Cessation
- 1998-12-31 JP JP2000526945A patent/JP4709376B2/ja not_active Expired - Fee Related
- 1998-12-31 KR KR1020007007321A patent/KR100630885B1/ko not_active Expired - Fee Related
- 1998-12-31 IL IL13707098A patent/IL137070A/en not_active IP Right Cessation
- 1998-12-31 EP EP98966132A patent/EP1044459B1/de not_active Expired - Lifetime
- 1998-12-31 WO PCT/US1998/027885 patent/WO1999034399A1/en not_active Ceased
- 1998-12-31 AT AT98966132T patent/ATE240585T1/de active
- 1998-12-31 DE DE69814687T patent/DE69814687T2/de not_active Expired - Lifetime
- 1998-12-31 AU AU22102/99A patent/AU2210299A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999034399A1 (en) | 1999-07-08 |
| EP1044459B1 (de) | 2003-05-14 |
| JP2002500413A (ja) | 2002-01-08 |
| IL137070A0 (en) | 2001-06-14 |
| DE69814687D1 (de) | 2003-06-18 |
| US6280563B1 (en) | 2001-08-28 |
| AU2210299A (en) | 1999-07-19 |
| DE69814687T2 (de) | 2004-02-26 |
| KR20010033787A (ko) | 2001-04-25 |
| TW423020B (en) | 2001-02-21 |
| ATE240585T1 (de) | 2003-05-15 |
| WO1999034399B1 (en) | 1999-08-26 |
| JP4709376B2 (ja) | 2011-06-22 |
| KR100630885B1 (ko) | 2006-10-02 |
| EP1044459A1 (de) | 2000-10-18 |
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