IL149403A0 - Plasma processing apparatus with an electrically conductive wall - Google Patents

Plasma processing apparatus with an electrically conductive wall

Info

Publication number: IL149403A0
Authority: IL; Israel
Prior art keywords: electrically conductive; conductive wall; processing apparatus; plasma processing; wall
Prior art date: 1999-11-17

Application number

IL14940300A

Other languages

English (en)

Original Assignee

European Community

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-11-17

Filing date

2000-09-29

Publication date

2002-11-10

2000-09-29 Application filed by European Community filed Critical European Community

2002-11-10 Publication of IL149403A0 publication Critical patent/IL149403A0/xx

Links

238000007789 sealing Methods 0.000 abstract 3

Classifications

- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Spectroscopy & Molecular Physics (AREA)
Electromagnetism (AREA)
Physical Or Chemical Processes And Apparatus (AREA)
Plasma Technology (AREA)
Chemical Vapour Deposition (AREA)
Treatment Of Fiber Materials (AREA)
Physical Vapour Deposition (AREA)
Drying Of Semiconductors (AREA)
ing And Chemical Polishing (AREA)
Non-Insulated Conductors (AREA)

IL14940300A 1999-11-17 2000-09-29 Plasma processing apparatus with an electrically conductive wall IL149403A0 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
EP99402845A EP1102305B1 (de)	1999-11-17	1999-11-17	Plasmabearbeitungsvorrichtung mit elektrisch leitender Wand
PCT/EP2000/009997 WO2001037313A1 (en)	1999-11-17	2000-09-29	Plasma processing apparatus with an electrically conductive wall

Publications (1)

Publication Number	Publication Date
IL149403A0 true IL149403A0 (en)	2002-11-10

Family

ID=8242178

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL14940300A IL149403A0 (en)	1999-11-17	2000-09-29	Plasma processing apparatus with an electrically conductive wall

Country Status (14)

Country	Link
US (1)	US6692622B1 (de)
EP (1)	EP1102305B1 (de)
JP (1)	JP4568467B2 (de)
KR (1)	KR20020079738A (de)
AT (1)	ATE239979T1 (de)
CA (1)	CA2391911C (de)
DE (1)	DE69907687T2 (de)
DK (1)	DK1102305T3 (de)
ES (1)	ES2197589T3 (de)
IL (1)	IL149403A0 (de)
NO (1)	NO20022358L (de)
PT (1)	PT1102305E (de)
TW (1)	TW503433B (de)
WO (1)	WO2001037313A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100542740B1 (ko) *	2002-11-11	2006-01-11	삼성전자주식회사	가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
US20050194099A1 (en) *	2004-03-03	2005-09-08	Jewett Russell F.Jr.	Inductively coupled plasma source using induced eddy currents
US8357242B2 (en)	2007-05-03	2013-01-22	Jewett Russell F	Crystalline film devices, apparatuses for and methods of fabrication
US9607719B2 (en)	2005-03-07	2017-03-28	The Regents Of The University Of California	Vacuum chamber for plasma electric generation system
KR101062807B1 (ko) *	2005-03-07	2011-09-07	더 리젠츠 오브 더 유니버시티 오브 캘리포니아	Frc의 자계에서 플라즈마 이온들 및 전자들을 드라이브하는 시스템 및 방법
US20060291529A1 (en) *	2005-05-26	2006-12-28	Haun Robert E	Cold wall induction nozzle
US8736177B2 (en) *	2010-09-30	2014-05-27	Fei Company	Compact RF antenna for an inductively coupled plasma ion source
GB2582948B (en) *	2019-04-10	2021-12-08	Thermo Fisher Scient Bremen Gmbh	Plasma source chamber for a spectrometer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4431901A (en) *	1982-07-02	1984-02-14	The United States Of America As Represented By The United States Department Of Energy	Induction plasma tube
JP3458912B2 (ja) *	1994-11-15	2003-10-20	アネルバ株式会社	プラズマ処理装置
US5874014A (en) *	1995-06-07	1999-02-23	Berkeley Scholars, Inc.	Durable plasma treatment apparatus and method
JP3825048B2 (ja) *	1995-06-29	2006-09-20	ラムリサーチコーポレイション	非円筒形ソースチャンバを有したスケーラブルヘリコン波プラズマ処理装置
US5763851A (en) *	1995-11-27	1998-06-09	Applied Materials, Inc.	Slotted RF coil shield for plasma deposition system
TW327236B (en) *	1996-03-12	1998-02-21	Varian Associates	Inductively coupled plasma reactor with faraday-sputter shield
US5885358A (en) *	1996-07-09	1999-03-23	Applied Materials, Inc.	Gas injection slit nozzle for a plasma process reactor
EP0841683A3 (de) *	1996-10-08	1999-12-01	Applied Materials, Inc.	Aktive Abschirmung zur Erzeugung eines Plasmas für die Zerstäubung
JPH10255997A (ja) *	1997-03-07	1998-09-25	Anelva Corp	磁場増強型誘導結合平面プラズマ発生装置
JPH10284299A (ja) *	1997-04-02	1998-10-23	Applied Materials Inc	高周波導入部材及びプラズマ装置
US6074514A (en) *	1998-02-09	2000-06-13	Applied Materials, Inc.	High selectivity etch using an external plasma discharge
US6080287A (en) *	1998-05-06	2000-06-27	Tokyo Electron Limited	Method and apparatus for ionized physical vapor deposition
US6074516A (en) *	1998-06-23	2000-06-13	Lam Research Corporation	High sputter, etch resistant window for plasma processing chambers
US6248251B1 (en) *	1999-02-19	2001-06-19	Tokyo Electron Limited	Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma

1999
- 1999-11-17 EP EP99402845A patent/EP1102305B1/de not_active Expired - Lifetime
- 1999-11-17 PT PT99402845T patent/PT1102305E/pt unknown
- 1999-11-17 ES ES99402845T patent/ES2197589T3/es not_active Expired - Lifetime
- 1999-11-17 DK DK99402845T patent/DK1102305T3/da active
- 1999-11-17 AT AT99402845T patent/ATE239979T1/de active
- 1999-11-17 DE DE69907687T patent/DE69907687T2/de not_active Expired - Lifetime
2000
- 2000-09-29 JP JP2001537769A patent/JP4568467B2/ja not_active Expired - Fee Related
- 2000-09-29 CA CA002391911A patent/CA2391911C/en not_active Expired - Fee Related
- 2000-09-29 IL IL14940300A patent/IL149403A0/xx not_active IP Right Cessation
- 2000-09-29 WO PCT/EP2000/009997 patent/WO2001037313A1/en not_active Ceased
- 2000-09-29 KR KR1020027006303A patent/KR20020079738A/ko not_active Withdrawn
- 2000-09-29 US US10/129,096 patent/US6692622B1/en not_active Expired - Fee Related
2001
- 2001-05-22 TW TW090112294A patent/TW503433B/zh not_active IP Right Cessation
2002
- 2002-05-16 NO NO20022358A patent/NO20022358L/no not_active Application Discontinuation

Also Published As

Publication number	Publication date
NO20022358D0 (no)	2002-05-16
PT1102305E (pt)	2003-09-30
TW503433B (en)	2002-09-21
ES2197589T3 (es)	2004-01-01
EP1102305B1 (de)	2003-05-07
EP1102305A1 (de)	2001-05-23
US6692622B1 (en)	2004-02-17
WO2001037313A1 (en)	2001-05-25
DE69907687T2 (de)	2004-03-11
JP4568467B2 (ja)	2010-10-27
CA2391911C (en)	2009-06-23
ATE239979T1 (de)	2003-05-15
DK1102305T3 (da)	2003-08-04
NO20022358L (no)	2002-06-28
DE69907687D1 (de)	2003-06-12
CA2391911A1 (en)	2001-05-25
KR20020079738A (ko)	2002-10-19
JP2003514387A (ja)	2003-04-15

Legal Events

Date	Code	Title
2006-09-05	FF	Patent granted
2006-10-30	KB	Patent renewed
2011-06-30	MM9K	Patent not in force due to non-payment of renewal fees

Publication	Publication Date	Title
GB9815042D0 (en)	1998-09-09	Detector
TW376547B (en)	1999-12-11	Method and apparatus for plasma processing
KR970077181A (ko)	1997-12-12	이온주입기에서 이온형성을 위한 방법 및 장치
TW353195B (en)	1999-02-21	Plasma processing system
MY126731A (en)	2006-10-31	Lower electrode design for higher uniformity
WO2003036700A1 (en)	2003-05-01	Device and method for microwave plasma processing, and microwave power supply device
IL153157A0 (en)	2003-06-24	Device and method for plasma processing and wave retardation plate
AU1423888A (en)	1988-10-10	High-frequency ion source
WO2003043160A3 (en)	2004-02-26	Apparatus and process for generating energy
DE69907687D1 (de)	2003-06-12	Plasmabearbeitungsvorrichtung mit elektrisch leitender Wand
WO1996041897A3 (en)	1997-05-09	Durable plasma treatment apparatus and method
SI1356496T1 (sl)	2009-02-28	Naprava za povrĹˇinsko obdelavo snovi z naparjenjem
FR2800905B1 (fr)	2001-11-30	Interrupteur de centrale avec un echangeur-radiateur
EP2110838A3 (de)	2010-06-30	Strompfadanordnung für einen Schutzschalter
AU2002221262A1 (en)	2003-06-17	A household appliance
PL328765A1 (en)	1999-02-15	Contact head effecting multiple electrical contact with a conductive members and means provided with such contact head
WO2001062053A3 (en)	2002-02-14	Active control of electron temperature in an electrostatically shielded radio frequency plasma source
DE59807685D1 (de)	2003-04-30	Implantation von radioaktiven ?32 p-atomen
GB2332566B (en)	2001-09-19	Electrical circuit breaker
NO962658D0 (no)	1996-06-21	Fremgangsmåte og anordning ved en elektrisk installasjonsboks
GB2003336A (en)	1979-03-07	Terminal block
JPS64698A (en)	1989-01-05	Plasma x-ray source
WO2000005743A3 (en)	2000-04-27	Cathode ray tube having a deflection unit provided with a fan
KR19990038076A (ko)	1999-06-05	전자렌지의 자장차폐장치
JPH07192889A (ja)	1995-07-28	ビーム発生方法及び装置