IL99303A - A laser from a wave router buried in a variable structure and a method for its production - Google Patents

A laser from a wave router buried in a variable structure and a method for its production

Info

Publication number
IL99303A
IL99303A IL9930391A IL9930391A IL99303A IL 99303 A IL99303 A IL 99303A IL 9930391 A IL9930391 A IL 9930391A IL 9930391 A IL9930391 A IL 9930391A IL 99303 A IL99303 A IL 99303A
Authority
IL
Israel
Prior art keywords
ridge
lateral
active region
laser structure
confining
Prior art date
Application number
IL9930391A
Other languages
English (en)
Hebrew (he)
Other versions
IL99303A0 (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL99303A0 publication Critical patent/IL99303A0/xx
Publication of IL99303A publication Critical patent/IL99303A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
IL9930391A 1990-09-12 1991-08-26 A laser from a wave router buried in a variable structure and a method for its production IL99303A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/582,300 US5138626A (en) 1990-09-12 1990-09-12 Ridge-waveguide buried-heterostructure laser and method of fabrication

Publications (2)

Publication Number Publication Date
IL99303A0 IL99303A0 (en) 1992-07-15
IL99303A true IL99303A (en) 1994-05-30

Family

ID=24328603

Family Applications (1)

Application Number Title Priority Date Filing Date
IL9930391A IL99303A (en) 1990-09-12 1991-08-26 A laser from a wave router buried in a variable structure and a method for its production

Country Status (5)

Country Link
US (1) US5138626A (ja)
EP (1) EP0475330B1 (ja)
JP (1) JPH04234189A (ja)
DE (1) DE69105079T2 (ja)
IL (1) IL99303A (ja)

Families Citing this family (30)

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FR2674684A1 (fr) * 1991-03-28 1992-10-02 Alcatel Nv Procede de realisation d'un composant semiconducteur tel qu'un laser a ruban enterre.
US5307357A (en) * 1992-11-05 1994-04-26 International Business Machines Corporation Protection means for ridge waveguide laser structures using thick organic films
JPH08107253A (ja) * 1994-08-12 1996-04-23 Mitsubishi Electric Corp 光導波路，半導体レーザ・導波路集積装置，半導体レーザ・導波路・フォトダイオード集積装置，半導体レーザ・導波路・モード整合集積装置，モード整合素子，及びその製造方法
DE69510529T2 (de) * 1994-10-06 1999-11-25 Uniphase Opto Holdings Inc., San Jose Strahlungsemittierende halbleiter-diode und herstellungsverfahren
JPH10233556A (ja) * 1997-02-20 1998-09-02 Mitsubishi Electric Corp リッジ型半導体レーザダイオードとその製造方法
US5912607A (en) * 1997-09-12 1999-06-15 American Superconductor Corporation Fault current limiting superconducting coil
US6365968B1 (en) 1998-08-07 2002-04-02 Corning Lasertron, Inc. Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device
EP1218973A4 (en) * 1999-09-03 2005-11-16 Univ California TUNABLE LASER SOURCE WITH INTEGRATED OPTICAL MODULATOR
US6757313B1 (en) * 1999-11-12 2004-06-29 Trumpf Photonics Inc. Control of current spreading in semiconductor laser diodes
WO2001035506A1 (en) * 1999-11-12 2001-05-17 Princeton Lightwave, Inc. Control of current spreading in semiconductor laser diodes
GB0018576D0 (en) 2000-07-27 2000-09-13 Univ Glasgow Improved semiconductor laser
US6878562B2 (en) 2000-10-20 2005-04-12 Phosistor Technologies, Incorporated Method for shifting the bandgap energy of a quantum well layer
GB2371406A (en) * 2001-01-23 2002-07-24 Univ Glasgow An Optically Active Device
US6649940B2 (en) 2001-06-29 2003-11-18 The Board Of Trustees Of The University Of Illinois Separate lateral confinement quantum well laser
KR100427581B1 (ko) * 2002-02-21 2004-04-28 한국전자통신연구원 반도체 광소자의 제조방법
KR100499128B1 (ko) * 2002-07-19 2005-07-04 삼성전기주식회사 전류제한층이 형성된 반도체 레이저 다이오드 및 그제조방법
US6845116B2 (en) * 2002-10-24 2005-01-18 Wisconsin Alumni Research Foundation Narrow lateral waveguide laser
WO2005011072A1 (en) * 2003-06-24 2005-02-03 Emcore Corporation Mechanical protection for semiconductor edge-emitting ridge waveguide lasers
CN1879266A (zh) * 2003-11-06 2006-12-13 波科海姆技术公共有限公司 高温激光二极管
JP5028640B2 (ja) * 2004-03-26 2012-09-19 日亜化学工業株式会社 窒化物半導体レーザ素子
US8768132B2 (en) * 2008-01-14 2014-07-01 Hewlett-Packard Development Company, L.P. Ridge waveguide
KR100909974B1 (ko) * 2008-10-13 2009-07-30 (주)엘디스 파장분할 통신용 반도체 레이저 다이오드와 그 제작 방법
US7983317B2 (en) 2008-12-16 2011-07-19 Corning Incorporated MQW laser structure comprising plural MQW regions
JP5323553B2 (ja) * 2009-03-26 2013-10-23 古河電気工業株式会社 半導体光増幅素子
KR101003970B1 (ko) 2010-05-19 2010-12-31 조호성 굴절률 가둠식 스트라이프형 반도체 레이저 다이오드 및 그 제조방법
US20120114001A1 (en) * 2010-11-10 2012-05-10 Fang Alexander W Hybrid ridge waveguide
JP2014170825A (ja) * 2013-03-04 2014-09-18 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ
US9726818B1 (en) 2013-05-30 2017-08-08 Hrl Laboratories, Llc Multi-wavelength band optical phase and amplitude controller
CN105226145B (zh) * 2014-06-23 2019-05-31 中国科学院物理研究所 量子阱结构、发光二极管外延结构及发光二极管
US12519288B2 (en) 2020-05-26 2026-01-06 Brolis Sensor Technology, Uab Optoelectronic devices with tunable optical mode and carrier distribution in the waveguides

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Also Published As

Publication number Publication date
EP0475330A2 (en) 1992-03-18
JPH04234189A (ja) 1992-08-21
DE69105079D1 (de) 1994-12-15
IL99303A0 (en) 1992-07-15
EP0475330A3 (en) 1992-04-29
DE69105079T2 (de) 1995-03-09
US5138626A (en) 1992-08-11
EP0475330B1 (en) 1994-11-09

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