IT1091703B - Transistore di arseniuro di gallio ad effetto di campo ad alta potenza - Google Patents

Transistore di arseniuro di gallio ad effetto di campo ad alta potenza

Info

Publication number: IT1091703B
Authority: IT; Italy
Prior art keywords: field; arsenior; transistor; high power; power field
Prior art date: 1976-10-29

Application number

IT69428/77A

Other languages

English (en)

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-10-29

Filing date

1977-10-28

Publication date

1985-07-06

1977-10-28 Application filed by Western Electric Co filed Critical Western Electric Co

1985-07-06 Application granted granted Critical

1985-07-06 Publication of IT1091703B publication Critical patent/IT1091703B/it

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching

IT69428/77A 1976-10-29 1977-10-28 Transistore di arseniuro di gallio ad effetto di campo ad alta potenza IT1091703B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/736,731 US4104672A (en)	1976-10-29	1976-10-29	High power gallium arsenide schottky barrier field effect transistor

Publications (1)

Publication Number	Publication Date
IT1091703B true IT1091703B (it)	1985-07-06

Family

ID=24961079

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT69428/77A IT1091703B (it)	1976-10-29	1977-10-28	Transistore di arseniuro di gallio ad effetto di campo ad alta potenza

Country Status (11)

Country	Link
US (1)	US4104672A (it)
JP (1)	JPS592384B2 (it)
BE (1)	BE860064A (it)
CA (1)	CA1092254A (it)
DE (1)	DE2748103C3 (it)
ES (1)	ES463648A1 (it)
FR (1)	FR2369689A1 (it)
GB (1)	GB1573775A (it)
IT (1)	IT1091703B (it)
NL (1)	NL7711887A (it)
SE (1)	SE7711676L (it)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4201997A (en) *	1978-04-21	1980-05-06	Texas Instruments Incorporated	MESFET semiconductor device and method of making
US4202003A (en) *	1978-04-21	1980-05-06	Texas Instruments Incorporated	MESFET Semiconductor device and method of making
US4202001A (en) *	1978-05-05	1980-05-06	Rca Corporation	Semiconductor device having grid for plating contacts
GB1601059A (en) *	1978-05-31	1981-10-21	Secr Defence	Fet devices and their fabrication
FR2431768A1 (fr) *	1978-07-20	1980-02-15	Labo Electronique Physique	Perfectionnement au procede de fabrication de dispositifs semi-conducteurs par auto-alignement et dispositifs obtenus
US4266333A (en) *	1979-04-27	1981-05-12	Rca Corporation	Method of making a Schottky barrier field effect transistor
JPS566476A (en) *	1979-06-28	1981-01-23	Nec Corp	Ultrahigh frequency field effect transistor
FR2461358A1 (fr) *	1979-07-06	1981-01-30	Thomson Csf	Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede
JPS5696657U (it) *	1979-12-21	1981-07-31
DE3177208D1 (de) *	1980-11-17	1990-10-04	Ball Corp	Integrierter monolithischer mikrowellenschaltkreis mit integraler antennenanordnung.
US4380022A (en) *	1980-12-09	1983-04-12	The United States Of America As Represented By The Secretary Of The Navy	Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect
CA1200017A (en) *	1981-12-04	1986-01-28	Ho C. Huang	Microwave field effect transistor
JPS58100462A (ja) *	1981-12-10	1983-06-15	Fujitsu Ltd	電界効果形トランジスタ
US4583107A (en) *	1983-08-15	1986-04-15	Westinghouse Electric Corp.	Castellated gate field effect transistor
US4495431A (en) *	1983-08-22	1985-01-22	United Technologies Corporation	Low reflectivity surface-mounted electrodes on semiconductive saw devices
FR2558647B1 (fr) *	1984-01-23	1986-05-09	Labo Electronique Physique	Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor
JPH0682686B2 (ja) *	1987-03-20	1994-10-19	日本ビクター株式会社	電界効果トランジスタ
US4899201A (en) *	1987-08-14	1990-02-06	Regents Of The University Of Minnesota	Electronic and optoelectric devices utilizing light hole properties
US4947062A (en) *	1988-05-19	1990-08-07	Adams Russell Electronics Co., Inc.	Double balanced mixing
JPH04171734A (ja) *	1990-11-02	1992-06-18	Mitsubishi Electric Corp	半導体装置
JPH04252036A (ja) *	1991-01-10	1992-09-08	Fujitsu Ltd	半導体装置
JP2580966B2 (ja) *	1993-08-05	1997-02-12	日本電気株式会社	半導体装置
US5698870A (en) *	1996-07-22	1997-12-16	The United States Of America As Represented By The Secretary Of The Air Force	High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
JP3499103B2 (ja) *	1997-02-21	2004-02-23	三菱電機株式会社	半導体装置
US6127272A (en) *	1998-01-26	2000-10-03	Motorola, Inc.	Method of electron beam lithography on very high resistivity substrates
IT1392321B1 (it) *	2008-12-15	2012-02-24	St Microelectronics Srl	Sistema sensore/attuatore interamente in materiale organico
US11929408B2 (en)	2020-05-14	2024-03-12	Macom Technology Solutions Holdings, Inc.	Layout techniques and optimization for power transistors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2120388A1 (de) *	1970-04-28	1971-12-16	Agency Ind Science Techn	Verbindungshalbleitervorrichtung
US3737743A (en) *	1971-12-23	1973-06-05	Gen Electric	High power microwave field effect transistor
US3855613A (en) *	1973-06-22	1974-12-17	Rca Corp	A solid state switch using an improved junction field effect transistor
JPS5631751B2 (it) *	1973-08-28	1981-07-23
US3969745A (en) *	1974-09-18	1976-07-13	Texas Instruments Incorporated	Interconnection in multi element planar structures
US4016643A (en) *	1974-10-29	1977-04-12	Raytheon Company	Overlay metallization field effect transistor
US4015278A (en) *	1974-11-26	1977-03-29	Fujitsu Ltd.	Field effect semiconductor device
US3988619A (en) *	1974-12-27	1976-10-26	International Business Machines Corporation	Random access solid-state image sensor with non-destructive read-out

1976
- 1976-10-29 US US05/736,731 patent/US4104672A/en not_active Expired - Lifetime
1977
- 1977-10-06 CA CA288,254A patent/CA1092254A/en not_active Expired
- 1977-10-17 SE SE7711676A patent/SE7711676L/ not_active Application Discontinuation
- 1977-10-24 FR FR7731920A patent/FR2369689A1/fr active Granted
- 1977-10-25 BE BE182016A patent/BE860064A/xx unknown
- 1977-10-27 DE DE2748103A patent/DE2748103C3/de not_active Expired
- 1977-10-28 ES ES463648A patent/ES463648A1/es not_active Expired
- 1977-10-28 GB GB44939/77A patent/GB1573775A/en not_active Expired
- 1977-10-28 NL NL7711887A patent/NL7711887A/xx not_active Application Discontinuation
- 1977-10-28 IT IT69428/77A patent/IT1091703B/it active
- 1977-10-29 JP JP52129253A patent/JPS592384B2/ja not_active Expired

Also Published As

Publication number	Publication date
DE2748103A1 (de)	1978-05-11
SE7711676L (sv)	1978-04-30
FR2369689B1 (it)	1982-04-09
GB1573775A (en)	1980-08-28
ES463648A1 (es)	1978-07-16
CA1092254A (en)	1980-12-23
BE860064A (fr)	1978-02-15
DE2748103B2 (de)	1980-09-18
US4104672A (en)	1978-08-01
JPS592384B2 (ja)	1984-01-18
FR2369689A1 (fr)	1978-05-26
DE2748103C3 (de)	1981-05-14
NL7711887A (nl)	1978-05-03
JPS5356978A (en)	1978-05-23

Publication	Publication Date	Title
IT1091703B (it)	1985-07-06	Transistore di arseniuro di gallio ad effetto di campo ad alta potenza
IT1077375B (it)	1985-05-04	Transistor ad effetto di campo ad alta velocita'
NL7704633A (nl)	1977-11-01	Veldeffecttransistor.
SE437827B (sv)	1985-03-18	Herbicidiskt aktiva foreningar
IT1058321B (it)	1982-04-10	Transistore complementare ad effetto di campo
IT1074052B (it)	1985-04-17	Memoria a transistori ad effetto di campo perfezionata
IT1086489B (it)	1985-05-28	Dispositivo di giunzione
IT1070009B (it)	1985-03-25	Transistore ad effetto di campo perfezionato
IT1083814B (it)	1985-05-25	Regolatore di potenza
IT1089715B (it)	1985-06-18	Dispositivo di alimentazione
IT1074692B (it)	1985-04-20	Dispositivo di alimentazione
SE7714576L (sv)	1978-07-01	Kylanordning
IT1074663B (it)	1985-04-20	Transistore per alte frequenze
IT1202748B (it)	1989-02-09	Dispositivo di rivelazione di campo magnetico
IT1080838B (it)	1985-05-16	Generatore di potenza ultrasonica
SE7700577L (sv)	1977-07-22	Oxiegenerade n-aryldiazacykliska foreningar
IT1038800B (it)	1979-11-30	Tranistore planare di potenza
FI55784B (fi)	1979-06-29	Kutterhuvud
SE411949B (sv)	1980-02-11	Kylanordning
SE427214B (sv)	1983-03-14	Kondensor
SE7705792L (sv)	1977-11-27	Polyamidaminforeningar
PL198142A1 (pl)	1978-02-13	Urzadzenie chlodzace
IT1091670B (it)	1985-07-06	Disposizione circuitale comprendente un transistore di potenza ad altatensione
ATA941976A (de)	1979-03-15	Bodenbearbeitunsfraese
ATA563179A (de)	1980-10-15	Kuehlvitrine