IT1231902B - Memoria elettronica cmos di sola lettura a funzionamento statico - Google Patents

Memoria elettronica cmos di sola lettura a funzionamento statico

Info

Publication number
IT1231902B
IT1231902B IT8722339A IT2233987A IT1231902B IT 1231902 B IT1231902 B IT 1231902B IT 8722339 A IT8722339 A IT 8722339A IT 2233987 A IT2233987 A IT 2233987A IT 1231902 B IT1231902 B IT 1231902B
Authority
IT
Italy
Prior art keywords
electronic memory
static operating
cmos electronic
operating cmos
static
Prior art date
Application number
IT8722339A
Other languages
English (en)
Other versions
IT8722339A0 (it
Inventor
Chinh Nguyen
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8722339A priority Critical patent/IT1231902B/it
Publication of IT8722339A0 publication Critical patent/IT8722339A0/it
Priority to US07/245,655 priority patent/US4928261A/en
Priority to EP88115445A priority patent/EP0312789B1/en
Priority to DE88115445T priority patent/DE3880615T2/de
Priority to JP25926988A priority patent/JP2669867B2/ja
Application granted granted Critical
Publication of IT1231902B publication Critical patent/IT1231902B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
IT8722339A 1987-10-20 1987-10-20 Memoria elettronica cmos di sola lettura a funzionamento statico IT1231902B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8722339A IT1231902B (it) 1987-10-20 1987-10-20 Memoria elettronica cmos di sola lettura a funzionamento statico
US07/245,655 US4928261A (en) 1987-10-20 1988-09-16 CMOS read-only memory with static operation
EP88115445A EP0312789B1 (en) 1987-10-20 1988-09-21 Cmos read-only electronic memory with static operation
DE88115445T DE3880615T2 (de) 1987-10-20 1988-09-21 Elektronischer CMOS-Festwertspeicher mit statischer Wirkung.
JP25926988A JP2669867B2 (ja) 1987-10-20 1988-10-14 読出し専用メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8722339A IT1231902B (it) 1987-10-20 1987-10-20 Memoria elettronica cmos di sola lettura a funzionamento statico

Publications (2)

Publication Number Publication Date
IT8722339A0 IT8722339A0 (it) 1987-10-20
IT1231902B true IT1231902B (it) 1992-01-15

Family

ID=11194905

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8722339A IT1231902B (it) 1987-10-20 1987-10-20 Memoria elettronica cmos di sola lettura a funzionamento statico

Country Status (5)

Country Link
US (1) US4928261A (it)
EP (1) EP0312789B1 (it)
JP (1) JP2669867B2 (it)
DE (1) DE3880615T2 (it)
IT (1) IT1231902B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940332A (en) * 1997-11-13 1999-08-17 Stmicroelectronics, Inc. Programmed memory with improved speed and power consumption
US8350939B2 (en) 2008-10-01 2013-01-08 Micron Technology, Inc. Vertical 4-way shared pixel in a single column with internal reset and no row select

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608558B2 (ja) * 1977-03-23 1985-03-04 日本電気株式会社 読出し専用記憶装置
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
JPS5837636B2 (ja) * 1980-07-31 1983-08-17 富士通株式会社 半導体記憶装置
US4389705A (en) * 1981-08-21 1983-06-21 Mostek Corporation Semiconductor memory circuit with depletion data transfer transistor
JPS61153898A (ja) * 1984-12-27 1986-07-12 Toshiba Corp 読み出し専用半導体記憶装置
US4695979A (en) * 1985-09-09 1987-09-22 Texas Instruments Incorporated Modified four transistor EEPROM cell
NL8602450A (nl) * 1986-09-29 1988-04-18 Philips Nv Geintegreerde geheugenschakeling met een enkelvoudige-schrijfbus circuit.
JPS63108596A (ja) * 1986-10-27 1988-05-13 Nec Corp 読み出し専用メモリ装置
US4811301A (en) * 1987-04-28 1989-03-07 Texas Instruments Incorporated Low-power, noise-resistant read-only memory

Also Published As

Publication number Publication date
JP2669867B2 (ja) 1997-10-29
IT8722339A0 (it) 1987-10-20
DE3880615T2 (de) 1993-10-28
JPH01134792A (ja) 1989-05-26
DE3880615D1 (de) 1993-06-03
US4928261A (en) 1990-05-22
EP0312789B1 (en) 1993-04-28
EP0312789A3 (en) 1990-06-20
EP0312789A2 (en) 1989-04-26

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030