IT1281736B1 - Generatore fotovoltaico con isolamento dielettrico e strati di struttura multistrato di silicio isolati e collegati - Google Patents

Generatore fotovoltaico con isolamento dielettrico e strati di struttura multistrato di silicio isolati e collegati

Info

Publication number
IT1281736B1
IT1281736B1 IT96MI000042A ITMI960042A IT1281736B1 IT 1281736 B1 IT1281736 B1 IT 1281736B1 IT 96MI000042 A IT96MI000042 A IT 96MI000042A IT MI960042 A ITMI960042 A IT MI960042A IT 1281736 B1 IT1281736 B1 IT 1281736B1
Authority
IT
Italy
Prior art keywords
hole
multilayer
multilayer structure
insulated
photovoltaic generator
Prior art date
Application number
IT96MI000042A
Other languages
English (en)
Inventor
William F Cantarini
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI960042A0 publication Critical patent/ITMI960042A0/it
Publication of ITMI960042A1 publication Critical patent/ITMI960042A1/it
Application granted granted Critical
Publication of IT1281736B1 publication Critical patent/IT1281736B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Element Separation (AREA)

Abstract

Un dispositivo generatore fotovoltaico per produrre una corrente di uscita sufficiente per attivare un dispositivo a porte (gate) MOS comprende una pluralità di fotogeneratori piatti collegati in serie. Ciascuno dei generatori fotovoltaici è contenuto nella rispettiva propria buca isolata. Le buche isolate sono formate da una struttura multistrato che collega una struttura multistrato contenente giunzioni con una struttura multistrato di supporto con uno strato di isolamento dielettrico fra esse. Le singole buche sono formate nei loro lati tramite trincee di isolamento che racchiudono ciascuna buca e che si estendono fino allo strato dielettrico fra le strutture multistrato contenenti le giunzioni e le strutture multistrato di supporto. Ciascuna buca è formata da un corpo N- avente una diffusione P+ di limitato spessore. Le regioni di contatto N+ sono formate nel corpo N- e le strisce di contatto collegano i dispositivi di ciascuna delle buche in serie collegando le diffusioni P+ di una buca con il contatto N+ di una buca adiacente.(Figura 5).
IT96MI000042A 1995-01-13 1996-01-12 Generatore fotovoltaico con isolamento dielettrico e strati di struttura multistrato di silicio isolati e collegati IT1281736B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/372,600 US5549762A (en) 1995-01-13 1995-01-13 Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers

Publications (3)

Publication Number Publication Date
ITMI960042A0 ITMI960042A0 (it) 1996-01-12
ITMI960042A1 ITMI960042A1 (it) 1997-07-12
IT1281736B1 true IT1281736B1 (it) 1998-02-27

Family

ID=23468862

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96MI000042A IT1281736B1 (it) 1995-01-13 1996-01-12 Generatore fotovoltaico con isolamento dielettrico e strati di struttura multistrato di silicio isolati e collegati

Country Status (6)

Country Link
US (1) US5549762A (it)
JP (1) JP3292651B2 (it)
DE (1) DE19546418C2 (it)
FR (1) FR2729504B1 (it)
GB (1) GB2296993B (it)
IT (1) IT1281736B1 (it)

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GB2322736B (en) * 1997-02-28 2002-06-26 Int Rectifier Corp Integrated photovoltaic switch with integrated power device
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US6037602A (en) * 1998-02-13 2000-03-14 C.P. Clare Corporation Photovoltaic generator circuit and method of making same
US6054365A (en) * 1998-07-13 2000-04-25 International Rectifier Corp. Process for filling deep trenches with polysilicon and oxide
US6452230B1 (en) 1998-12-23 2002-09-17 International Rectifier Corporation High voltage mosgated device with trenches to reduce on-resistance
US6391664B1 (en) * 1999-09-29 2002-05-21 Advanced Micro Devices, Inc. Selectively activatable solar cells for integrated circuit analysis
JP4482253B2 (ja) * 2001-09-12 2010-06-16 浜松ホトニクス株式会社 ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
JP2003086827A (ja) * 2001-09-12 2003-03-20 Hamamatsu Photonics Kk ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
US6787693B2 (en) * 2001-12-06 2004-09-07 International Rectifier Corporation Fast turn on/off photovoltaic generator for photovoltaic relay
US7010644B2 (en) 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US7288825B2 (en) * 2002-12-18 2007-10-30 Noble Peak Vision Corp. Low-noise semiconductor photodetectors
JP2005045125A (ja) * 2003-07-24 2005-02-17 Hamamatsu Photonics Kk 光検出素子の製造方法
US8334451B2 (en) * 2003-10-03 2012-12-18 Ixys Corporation Discrete and integrated photo voltaic solar cells
US20050133081A1 (en) * 2003-11-25 2005-06-23 Ixys Corporation Photo voltaic solar cells integrated with mosfet
GB0507157D0 (en) * 2005-04-08 2005-05-18 Ami Semiconductor Belgium Bvba Double trench for isolation of semiconductor devices
JP2010500766A (ja) * 2006-08-10 2010-01-07 アイスモス・テクノロジー・リミテッド ウエハ貫通ビアを備えたフォトダイオードアレイの製造方法
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
JP2010538495A (ja) * 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US20100186795A1 (en) * 2009-01-28 2010-07-29 Stephen Joseph Gaul Connection systems and methods for solar cells
TWI492392B (zh) * 2010-08-27 2015-07-11 Ind Tech Res Inst 半導體元件模組封裝結構及其串接方式
JP5780629B2 (ja) * 2010-12-15 2015-09-16 学校法人 東洋大学 半導体装置
US8822262B2 (en) 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
US9515217B2 (en) 2012-11-05 2016-12-06 Solexel, Inc. Monolithically isled back contact back junction solar cells
TWI489642B (zh) 2012-12-26 2015-06-21 Ind Tech Res Inst 太陽能電池封裝模組及其製造方法
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
CN105448945B (zh) * 2015-12-29 2019-07-05 同方威视技术股份有限公司 同面电极光电二极管阵列及其制作方法

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Also Published As

Publication number Publication date
DE19546418C2 (de) 2001-11-29
ITMI960042A0 (it) 1996-01-12
JPH08250761A (ja) 1996-09-27
DE19546418A1 (de) 1996-07-18
GB2296993A (en) 1996-07-17
US5549762A (en) 1996-08-27
FR2729504A1 (fr) 1996-07-19
FR2729504B1 (fr) 1999-01-08
JP3292651B2 (ja) 2002-06-17
GB9526541D0 (en) 1996-02-28
GB2296993B (en) 1998-09-23
ITMI960042A1 (it) 1997-07-12

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