IT8020412A0 - Processo perfezionato per la fabbricazione di dispositivi nonplanari. - Google Patents
Processo perfezionato per la fabbricazione di dispositivi nonplanari.Info
- Publication number
- IT8020412A0 IT8020412A0 IT8020412A IT2041280A IT8020412A0 IT 8020412 A0 IT8020412 A0 IT 8020412A0 IT 8020412 A IT8020412 A IT 8020412A IT 2041280 A IT2041280 A IT 2041280A IT 8020412 A0 IT8020412 A0 IT 8020412A0
- Authority
- IT
- Italy
- Prior art keywords
- improved process
- manufacturing
- nonplanar devices
- devices
- manufacturing nonplanar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/028,461 US4268952A (en) | 1979-04-09 | 1979-04-09 | Method for fabricating self-aligned high resolution non planar devices employing low resolution registration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8020412A0 true IT8020412A0 (it) | 1980-03-07 |
| IT1151056B IT1151056B (it) | 1986-12-17 |
Family
ID=21843570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20412/80A IT1151056B (it) | 1979-04-09 | 1980-03-07 | Processo perfeezionato per la fabbricazione di dispositivi non planari |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4268952A (it) |
| EP (1) | EP0016968A1 (it) |
| JP (1) | JPS55134981A (it) |
| CA (2) | CA1126876A (it) |
| IT (1) | IT1151056B (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5667974A (en) * | 1979-10-26 | 1981-06-08 | Ibm | Method of manufacturing semiconductor device |
| US4324038A (en) * | 1980-11-24 | 1982-04-13 | Bell Telephone Laboratories, Incorporated | Method of fabricating MOS field effect transistors |
| DE3170644D1 (en) * | 1980-11-29 | 1985-06-27 | Toshiba Kk | Method of filling a groove in a semiconductor substrate |
| JPS5893351A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | 半導体装置及び製造方法 |
| JPS598374A (ja) * | 1982-07-05 | 1984-01-17 | Matsushita Electronics Corp | 縦型構造電界効果トランジスタの製造方法 |
| US4586243A (en) * | 1983-01-14 | 1986-05-06 | General Motors Corporation | Method for more uniformly spacing features in a semiconductor monolithic integrated circuit |
| US4544940A (en) * | 1983-01-14 | 1985-10-01 | General Motors Corporation | Method for more uniformly spacing features in a lateral bipolar transistor |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3598664A (en) * | 1964-12-29 | 1971-08-10 | Texas Instruments Inc | High frequency transistor and process for fabricating same |
| US3518509A (en) * | 1966-06-17 | 1970-06-30 | Int Standard Electric Corp | Complementary field-effect transistors on common substrate by multiple epitaxy techniques |
| FR2157740B1 (it) * | 1971-10-29 | 1976-10-29 | Thomson Csf | |
| US3968562A (en) * | 1971-11-25 | 1976-07-13 | U.S. Philips Corporation | Method of manufacturing a semiconductor device |
| US4027380A (en) * | 1974-06-03 | 1977-06-07 | Fairchild Camera And Instrument Corporation | Complementary insulated gate field effect transistor structure and process for fabricating the structure |
| JPS52128078A (en) * | 1976-04-21 | 1977-10-27 | Mitsubishi Electric Corp | Manufacture of field effect transistor |
| JPS53125778A (en) * | 1977-04-08 | 1978-11-02 | Nec Corp | Semiconductor device |
| JPS5423479A (en) * | 1977-07-25 | 1979-02-22 | Agency Of Ind Science & Technol | Manufacture for field effect transistor of insulation gate type |
| DE2738008A1 (de) * | 1977-08-23 | 1979-03-01 | Siemens Ag | Verfahren zum herstellen einer eintransistor-speicherzelle |
| US4145459A (en) * | 1978-02-02 | 1979-03-20 | Rca Corporation | Method of making a short gate field effect transistor |
-
1979
- 1979-04-09 US US06/028,461 patent/US4268952A/en not_active Expired - Lifetime
-
1980
- 1980-02-05 JP JP1214080A patent/JPS55134981A/ja active Pending
- 1980-02-06 CA CA345,149A patent/CA1126876A/en not_active Expired
- 1980-02-28 EP EP80100984A patent/EP0016968A1/en not_active Ceased
- 1980-03-07 IT IT20412/80A patent/IT1151056B/it active
- 1980-03-10 CA CA347,322A patent/CA1132146A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4268952A (en) | 1981-05-26 |
| EP0016968A1 (en) | 1980-10-15 |
| CA1132146A (en) | 1982-09-21 |
| IT1151056B (it) | 1986-12-17 |
| CA1126876A (en) | 1982-06-29 |
| JPS55134981A (en) | 1980-10-21 |
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