ITMI922575A1 - Circuito per incrementare la velocita' di funzionamento di un dispositivo di memoria a semiconduttore - Google Patents

Circuito per incrementare la velocita' di funzionamento di un dispositivo di memoria a semiconduttore

Info

Publication number
ITMI922575A1
ITMI922575A1 IT002575A ITMI922575A ITMI922575A1 IT MI922575 A1 ITMI922575 A1 IT MI922575A1 IT 002575 A IT002575 A IT 002575A IT MI922575 A ITMI922575 A IT MI922575A IT MI922575 A1 ITMI922575 A1 IT MI922575A1
Authority
IT
Italy
Prior art keywords
circuit
increase
memory device
semiconductor memory
operating speed
Prior art date
Application number
IT002575A
Other languages
English (en)
Inventor
Sung-Hee Cho
Cheol-Ung Jang
Hyong-Gon Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI922575A0 publication Critical patent/ITMI922575A0/it
Publication of ITMI922575A1 publication Critical patent/ITMI922575A1/it
Application granted granted Critical
Publication of IT1258253B publication Critical patent/IT1258253B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048Data bus control circuits, e.g. precharging, presetting, equalising
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/18Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
ITMI922575A 1991-11-19 1992-11-10 Circuito per incrementare la velocita' di funzionamento di un dispositivo di memoria a semiconduttore IT1258253B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910020595A KR930010990A (ko) 1991-11-19 1991-11-19 반도체 메모리 장치에서의 스피드 향상을 위한 회로

Publications (3)

Publication Number Publication Date
ITMI922575A0 ITMI922575A0 (it) 1992-11-10
ITMI922575A1 true ITMI922575A1 (it) 1994-05-10
IT1258253B IT1258253B (it) 1996-02-22

Family

ID=19323071

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922575A IT1258253B (it) 1991-11-19 1992-11-10 Circuito per incrementare la velocita' di funzionamento di un dispositivo di memoria a semiconduttore

Country Status (8)

Country Link
JP (1) JPH05217378A (it)
KR (1) KR930010990A (it)
CN (1) CN1072528A (it)
DE (1) DE4234153A1 (it)
FR (1) FR2683934A1 (it)
GB (1) GB2261754A (it)
IT (1) IT1258253B (it)
TW (1) TW198157B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940002860A (ko) * 1992-07-27 1994-02-19 김광호 어드레스 변동 검출기
US8688955B2 (en) * 2010-08-13 2014-04-01 Micron Technology, Inc. Line termination methods and apparatus
CN102723100A (zh) * 2012-05-23 2012-10-10 常州芯奇微电子科技有限公司 多功能内存接口电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224875A (ja) * 1985-07-24 1987-02-02 Sekisui Chem Co Ltd 溶接装置
JPH0640439B2 (ja) * 1986-02-17 1994-05-25 日本電気株式会社 半導体記憶装置
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
KR910003605B1 (ko) * 1988-04-30 1991-06-07 삼성전자 주식회사 Sram 센스앰프의 등화회로
JPH0814989B2 (ja) * 1989-05-09 1996-02-14 日本電気株式会社 内部同期型スタティックram
US4969125A (en) * 1989-06-23 1990-11-06 International Business Machines Corporation Asynchronous segmented precharge architecture
EP0419852A3 (en) * 1989-09-22 1992-08-05 Texas Instruments Incorporated A memory with selective address transition detection for cache operation

Also Published As

Publication number Publication date
ITMI922575A0 (it) 1992-11-10
JPH05217378A (ja) 1993-08-27
FR2683934A1 (fr) 1993-05-21
IT1258253B (it) 1996-02-22
GB2261754A (en) 1993-05-26
DE4234153A1 (de) 1993-05-27
TW198157B (it) 1993-01-11
GB9224303D0 (en) 1993-01-06
KR930010990A (ko) 1993-06-23
CN1072528A (zh) 1993-05-26

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Legal Events

Date Code Title Description
0001 Granted