ITRM940160A0 - Procedimento e dispositivo per la riduzione dell'inserimento di ossigeno in un monocristallo di silicio. - Google Patents

Procedimento e dispositivo per la riduzione dell'inserimento di ossigeno in un monocristallo di silicio.

Info

Publication number
ITRM940160A0
ITRM940160A0 ITRM940160A ITRM940160A ITRM940160A0 IT RM940160 A0 ITRM940160 A0 IT RM940160A0 IT RM940160 A ITRM940160 A IT RM940160A IT RM940160 A ITRM940160 A IT RM940160A IT RM940160 A0 ITRM940160 A0 IT RM940160A0
Authority
IT
Italy
Prior art keywords
oxygen
procedure
reducing
single crystal
silicon single
Prior art date
Application number
ITRM940160A
Other languages
English (en)
Inventor
Hans Oelkrug
Franz Segieth
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of ITRM940160A0 publication Critical patent/ITRM940160A0/it
Publication of ITRM940160A1 publication Critical patent/ITRM940160A1/it
Application granted granted Critical
Publication of IT1272189B publication Critical patent/IT1272189B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
ITRM940160A 1993-03-25 1994-03-23 Procedimento e dispositivo per la riduzione dell'inserimento di ossigeno in un monocristallo di silicio. IT1272189B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4309769A DE4309769A1 (de) 1993-03-25 1993-03-25 Verfahren und Vorrichtung zur Verringerung des Sauerstoffeinbaus in einen Einkristall aus Silicium

Publications (3)

Publication Number Publication Date
ITRM940160A0 true ITRM940160A0 (it) 1994-03-23
ITRM940160A1 ITRM940160A1 (it) 1995-09-23
IT1272189B IT1272189B (it) 1997-06-16

Family

ID=6483872

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM940160A IT1272189B (it) 1993-03-25 1994-03-23 Procedimento e dispositivo per la riduzione dell'inserimento di ossigeno in un monocristallo di silicio.

Country Status (5)

Country Link
US (1) US5477808A (it)
JP (1) JP2673221B2 (it)
KR (1) KR0143510B1 (it)
DE (1) DE4309769A1 (it)
IT (1) IT1272189B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69800420T2 (de) * 1997-06-06 2001-07-26 Japan Science And Technology Corp., Kawaguchi Verfahren zur Herstellung Siliziumkristallen
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5007200B2 (ja) * 2007-10-31 2012-08-22 範八 松井 テストプラグ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179099A (en) * 1981-04-28 1982-11-04 Toshiba Corp Manufacturing apparatus for silicon single crystal
US4545849A (en) * 1983-03-03 1985-10-08 Motorola Inc. Method for control of oxygen in silicon crystals
JPS6259594A (ja) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd 結晶の引上げ方法
JPH0719798B2 (ja) * 1990-07-18 1995-03-06 新日本製鐵株式会社 微細金属球の配列方法
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JPH0442890A (ja) * 1990-06-08 1992-02-13 Sumitomo Metal Ind Ltd 結晶成長装置
JPH0475356A (ja) * 1990-07-17 1992-03-10 Mitsubishi Electric Corp 半導体装置
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
JP2951793B2 (ja) * 1992-02-25 1999-09-20 三菱マテリアル株式会社 単結晶引上装置
JPH05238875A (ja) * 1992-02-25 1993-09-17 Mitsubishi Materials Corp 単結晶引上装置

Also Published As

Publication number Publication date
JPH0710692A (ja) 1995-01-13
IT1272189B (it) 1997-06-16
JP2673221B2 (ja) 1997-11-05
KR940022678A (ko) 1994-10-21
DE4309769A1 (de) 1994-09-29
ITRM940160A1 (it) 1995-09-23
KR0143510B1 (ko) 1998-07-15
US5477808A (en) 1995-12-26

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19980327