JP2000513401A - 冷却システム用の腐食防止剤液 - Google Patents
冷却システム用の腐食防止剤液Info
- Publication number
- JP2000513401A JP2000513401A JP10503565A JP50356598A JP2000513401A JP 2000513401 A JP2000513401 A JP 2000513401A JP 10503565 A JP10503565 A JP 10503565A JP 50356598 A JP50356598 A JP 50356598A JP 2000513401 A JP2000513401 A JP 2000513401A
- Authority
- JP
- Japan
- Prior art keywords
- integer
- liquid
- complex anion
- heteropoly complex
- transition metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000007797 corrosion Effects 0.000 title claims abstract description 34
- 238000005260 corrosion Methods 0.000 title claims abstract description 34
- 238000001816 cooling Methods 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 title claims description 44
- 239000003112 inhibitor Substances 0.000 title abstract description 11
- 150000001450 anions Chemical class 0.000 claims abstract description 43
- 229910001508 alkali metal halide Inorganic materials 0.000 claims abstract description 25
- 150000008045 alkali metal halides Chemical class 0.000 claims abstract description 25
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract 16
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 claims description 38
- -1 zinc halide Chemical class 0.000 claims description 16
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 11
- 125000005842 heteroatom Chemical group 0.000 claims description 10
- 150000003624 transition metals Chemical group 0.000 claims description 10
- 239000002250 absorbent Substances 0.000 claims description 9
- 230000002745 absorbent Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 claims description 8
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Chemical group 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 claims description 5
- 239000006096 absorbing agent Substances 0.000 claims description 4
- 230000002401 inhibitory effect Effects 0.000 claims description 4
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical group [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims 1
- 238000005536 corrosion prevention Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000002826 coolant Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 42
- 125000004429 atom Chemical group 0.000 description 16
- 229910000975 Carbon steel Inorganic materials 0.000 description 10
- 239000010962 carbon steel Substances 0.000 description 10
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 9
- NMHMDUCCVHOJQI-UHFFFAOYSA-N lithium molybdate Chemical compound [Li+].[Li+].[O-][Mo]([O-])(=O)=O NMHMDUCCVHOJQI-UHFFFAOYSA-N 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- JQVALDCWTQRVQE-UHFFFAOYSA-N dilithium;dioxido(dioxo)chromium Chemical compound [Li+].[Li+].[O-][Cr]([O-])(=O)=O JQVALDCWTQRVQE-UHFFFAOYSA-N 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910020881 PMo12O40 Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- AEIXRCIKZIZYPM-UHFFFAOYSA-M hydroxy(oxo)iron Chemical compound [O][Fe]O AEIXRCIKZIZYPM-UHFFFAOYSA-M 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241001279686 Allium moly Species 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 229910002588 FeOOH Inorganic materials 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 241000203482 Polyscias Species 0.000 description 1
- 229910020628 SiW12O40 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- VJHXXNYZXFPCGL-UHFFFAOYSA-N [Li].Br Chemical compound [Li].Br VJHXXNYZXFPCGL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052598 goethite Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910001055 inconels 600 Inorganic materials 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- WIAVVDGWLCNNGT-UHFFFAOYSA-M lithium;butanoate Chemical compound [Li+].CCCC([O-])=O WIAVVDGWLCNNGT-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AMWVZPDSWLOFKA-UHFFFAOYSA-N phosphanylidynemolybdenum Chemical compound [Mo]#P AMWVZPDSWLOFKA-UHFFFAOYSA-N 0.000 description 1
- 229920000447 polyanionic polymer Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001456 vanadium ion Inorganic materials 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/02—Materials undergoing a change of physical state when used
- C09K5/04—Materials undergoing a change of physical state when used the change of state being from liquid to vapour or vice versa
- C09K5/047—Materials undergoing a change of physical state when used the change of state being from liquid to vapour or vice versa for absorption-type refrigeration systems
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/18—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using inorganic inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/18—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using inorganic inhibitors
- C23F11/185—Refractory metal-containing compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Sorption Type Refrigeration Machines (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.冷却システム用の吸収液であって、少なくとも一つのアルカリ金属ハライド 及び腐食防止効果をもたらすのに十分な量の少なくとも一つの遷移金属元素のヘ テロポリ錯アニオンを含む吸収液。 2.上記少なくとも一つのヘテロポリ錯アニオンが吸収式冷却システムにおいて 腐食防止性能を有する少なくとも一つの遷移金属原子を含む請求項1に記載の液 。 3.上記少なくとも一つのヘテロポリ錯アニオンが、[XaMbOc]-n、[XaZdMb Oc]-n、[XaZdMbOcHe]-n、[XaMbOc(OH)f」-n、及び[XaZdMbOc( OH)f]-n及びこれらの混合物であって、 X及びZは周期表の第I族から第VIII族までの元素からなる群から選ばれる中 心ヘテロ原子であり、 aは1あるいは2であり、 dは0から4までの整数であり、 MbOc、MbOcHe、及びMbOc(OH)fは、オキソアニオンであって、 Mは遷移金属元素であり、 bは5から22までの整数であり、 cは20から70までの整数であり、 eは0から6までの整数であり、 fは0から3までの整数であり、 nはアニオンの電荷である請求項1に記載の液。 4.Xがリン、ケイ素、マンガン、テルルあるいはヒ素であり、Mがモリブデン あるいはタングステンである請求項3に記載の液。 5.上記少なくとも一つのヘテロポリ錯アニオンがリンモリブデン酸塩、ケイ素 モリブデン酸塩、マンガンモリブデン酸塩、ケイ素タングステン酸塩、テルルモ リブデン酸塩、ヒ素モリブデン酸塩、及びこれらの混合物からなる群から選ばれ る請求項1に記載の液。 6.上記少なくとも一つのヘテロポリ錯アニオンが式[PMo12O40]-3のリンモリブ デン酸塩である請求項1に記載の液。 7.上記少なくとも一つのヘテロポリ錯アニオンが100ppmから約3000ppm までの量で存在する請求項1に記載の液。 8.少なくとも一つのアルカリ金属ハライドが臭化リチウム、塩化リチウム、ヨ ウ化リチウム及びこれらの混合物から選ばれる請求項1に記載の液。 9.更に、亜鉛ハライドを含む請求項1に記載の液。 10.冷却システム用の吸収液であって、 少なくとも一つのリチウムハライド及び腐食防止効果をもたらすのに十分な量 の少なくとも一つの遷移金属元素のヘテロポリ錯アニオンを含み、 上記少なくとも一つの遷移金属元素のヘテロポリ錯アニオンが[XaMbOc]-n 、[XaZdMbOc]-n、[XaZdMbOcHe]-n、[XaMbOc(OH)f]-n、及び[Xa ZdMbOc](OH)f]-n及びこれらの混合物であって、 X及びZは周期表の第I族から第VIII族までの元素からなる群から選ばれる中 心ヘテロ原子であり、 aは1あるいは2であり、 dは0から4までの整数であり、 MbOc、MbOcHe、及びMbOc(OH)fは、オキソアニオンであって、 Mは遷移金属元素であり、 bは5から22までの整数であり、 cは20から70までの整数であり、 eは0から6までの整数であり、 fは0から3の整数であり、 nはアニオンの電荷である吸収液。 11.冷却システム用の吸収液であって、リチウムハライド及び上記液中に腐食 を防止する量のモリブデンイオンをもたらすのに十分な量の少なくとも一つのリ ンモリブデン酸塩からなる吸収液。 12.上記少なくとも一つのリンモリブデン酸塩が式[PMo12O40]-3の化合物から なる請求項11に記載の液。 13.アルカリ金属ハライド吸収液の存在から生じる冷却機の腐食を防止する方 法であって、少なくとも一つのアルカリ金属ハライド及び腐食防止効果をもたら すのに十分な量の少なくとも一つの遷移金属元素のヘテロポリ錯アニオンを含む 吸収液を冷却機中に循環することを含む方法。 14.上記少なくとも一つのヘテロポリ錯アニオンが吸収式冷却システムにおい て腐食防止効果を有する少なくとも一つの遷移金属元素を含む請求項13に記載 の方法。 15.上記少なくとも一つのヘテロポリ錯アニオンが[XaMbOd]-n、[XaZdMb Oc]-n、[XaZdMbOcHe]-n、[XaMbOc(OH)f]-n、及び[XaZdMbOc(O H)f]-n及びこれらの混合物であって、 X及びZは周期表の第I族から第VIII族までの元素からなる群から選ばれる中 心ヘテロ原子であり、 aは1あるいは2であり、 dは0から4までの整数であり、 MbOc、MbOcHe、及びMbOc(OH)fは、オキソアニオンであって、 Mは遷移金属元素であり、 bは5から22までの整数であり、 cは20から70までの整数であり、 eは0から6までの整数であり、 fは0から3までの整数であり、 nはアニオンの電荷である請求項13に記載のプロセス。 16.Xがリン、ケイ素、マンガン、テルルあるいはヒ素であり、 Mがモリブデンあるいはタングステンである請求項13に記載のプロセス。 17.上記少なくとも一つのヘテロポリ錯アニオンがリンモリブデン酸塩、ケイ 素モリブデン酸塩、マンガンモリブデン酸塩、ケイ素タングステン酸塩、テルル モリブデン酸塩、ヒ素モリブデン酸塩、及びこれらの混合物からなる群から選ば れる請求項13に記載のプロセス。 18.上記少なくとも一つのヘテロポリ錯アニオンが式[PMo12O40]-3のリンモリ ブデン酸塩からなる請求項13に記載のプロセス。 19.上記少なくとも一つのヘテロポリ錯アニオンが100ppmから約3000pp mまでの量で存在する請求項13に記載の方法。 20.上記少なくとも一つのアルカリ金属ハライドが臭化リチウム、塩化リチウ ム、ヨウ化リチウム及びこれらの混合物からなる群から選ばれる請求項13に記 載の方法。 21.上記液が更に、亜鉛ハライドを含む請求項13に記載の方法。 22.上記液が更に、硝酸リチウムを含む請求項13に記載の方法。 23.上記循環ステップの間、上記少なくとも一つのヘテロポリ錯アニオンが上 記冷却機内表面にマグネタイトの保護層を形成する請求項13に記載の方法。 24.上記循環ステップの間、上記液が約150°Fから約550°Fまでの温度に曝 される請求項13に記載の方法。
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2066396P | 1996-06-27 | 1996-06-27 | |
| US60/020,663 | 1996-06-27 | ||
| US2229396P | 1996-07-23 | 1996-07-23 | |
| US60/022,293 | 1996-07-23 | ||
| PCT/US1997/011230 WO1997049842A1 (en) | 1996-06-27 | 1997-06-26 | Corrosion inhibiting solutions for refrigeration systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000513401A true JP2000513401A (ja) | 2000-10-10 |
Family
ID=26693712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10503565A Ceased JP2000513401A (ja) | 1996-06-27 | 1997-06-26 | 冷却システム用の腐食防止剤液 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6004475A (ja) |
| JP (1) | JP2000513401A (ja) |
| AU (1) | AU3412297A (ja) |
| WO (1) | WO1997049842A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008261618A (ja) * | 2007-03-16 | 2008-10-30 | Osaka Gas Co Ltd | 吸収溶液組成物および吸収式冷温水機の運転方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6503420B1 (en) * | 1997-10-06 | 2003-01-07 | Fmc Corporation | Anti-corrosion solutions for air dehumidification systems |
| US6253212B1 (en) * | 1998-06-23 | 2001-06-26 | Oracle Corporation | Method and system for maintaining checkpoint values |
| EP1210397B1 (en) * | 1999-09-07 | 2004-02-18 | Fmc Corporation | Corrosion inhibiting solutions for absorption systems |
| EP1352942A1 (en) * | 1999-09-07 | 2003-10-15 | Fmc Corporation | Corrosion inhibiting solutions for absorption systems |
| US6758988B1 (en) * | 1999-09-07 | 2004-07-06 | Fmc Corporation | Corrosion inhibiting solutions for absorption systems |
| US6620341B1 (en) * | 1999-12-23 | 2003-09-16 | Fmc Corporation | Corrosion inhibitors for use in oil and gas wells and similar applications |
| US6790789B2 (en) * | 2000-10-25 | 2004-09-14 | International Business Machines Corporation | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
| US6430942B1 (en) * | 2000-10-31 | 2002-08-13 | Carrier Corporation | Inhibitor replenishment system |
| RU2237073C1 (ru) * | 2003-07-29 | 2004-09-27 | Романовский Дмитрий Вячеславович | Противокоррозионный пигмент |
| EP1833941A4 (en) * | 2004-12-14 | 2010-09-15 | Mi Llc | SALT SOLUTIONS HIGH DENSITY FOR USE IN DRILLING LIQUIDS |
| EP1896548A1 (en) * | 2005-06-30 | 2008-03-12 | M-I L.L.C. | Fluid loss pills |
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| US3227518A (en) * | 1962-03-05 | 1966-01-04 | Du Pont | Diniobioheteropoly acids and salts thereof |
| US3478530A (en) * | 1967-12-15 | 1969-11-18 | Worthington Corp | Absorption refrigeration system |
| SE8203089L (sv) * | 1981-05-18 | 1982-11-19 | Osaka Gas Co Ltd | Absorptionskomposition for luftkonditioneringsanleggingar eller varmvattenberedare |
| JPS58164792A (ja) * | 1982-03-23 | 1983-09-29 | Otsuka Chem Co Ltd | アルミエンジン用腐食防止液 |
| JPS58224185A (ja) * | 1982-06-23 | 1983-12-26 | Showa Denko Kk | 腐蝕抑止性臭化リチウム組成物 |
| JPS58224187A (ja) * | 1982-06-24 | 1983-12-26 | Showa Denko Kk | 防蝕性臭化リチウム組成物 |
| JPS5993778A (ja) * | 1982-11-19 | 1984-05-30 | Sanyo Electric Co Ltd | 吸収式冷凍機用組成物 |
| JPS60118785A (ja) * | 1983-11-29 | 1985-06-26 | Kawasaki Heavy Ind Ltd | 吸収冷凍機用吸収液 |
| US4743393A (en) * | 1986-06-06 | 1988-05-10 | Basf Corporation | Antifreeze concentrates and coolants containing heteropolymolybdate compounds |
| JP2755584B2 (ja) * | 1988-01-19 | 1998-05-20 | 三洋電機株式会社 | 吸収式冷凍機 |
| FR2627511B1 (fr) * | 1988-02-18 | 1993-07-09 | Gaz De France | Inhibiteurs de corrosion des aciers et compositions aqueuses d'halogenure de metal alcalin les contenant |
| JP2708857B2 (ja) * | 1988-06-30 | 1998-02-04 | 三洋電機株式会社 | 吸収冷凍機 |
| GB9123794D0 (en) * | 1991-11-08 | 1992-01-02 | Atkinson Stephen | Vapour absorbent compositions |
| US5547600A (en) * | 1995-05-05 | 1996-08-20 | Carrier Corporation | Absorption refrigeration system working fluid with molybdate, borate, silicate inhibitor blend |
-
1997
- 1997-06-23 US US08/876,126 patent/US6004475A/en not_active Expired - Lifetime
- 1997-06-26 JP JP10503565A patent/JP2000513401A/ja not_active Ceased
- 1997-06-26 WO PCT/US1997/011230 patent/WO1997049842A1/en not_active Ceased
- 1997-06-26 AU AU34122/97A patent/AU3412297A/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008261618A (ja) * | 2007-03-16 | 2008-10-30 | Osaka Gas Co Ltd | 吸収溶液組成物および吸収式冷温水機の運転方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1997049842A1 (en) | 1997-12-31 |
| US6004475A (en) | 1999-12-21 |
| AU3412297A (en) | 1998-01-14 |
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