JP3857329B2 - 集積半導体メモリ回路およびその作動方法 - Google Patents

集積半導体メモリ回路およびその作動方法 Download PDF

Info

Publication number
JP3857329B2
JP3857329B2 JP01749595A JP1749595A JP3857329B2 JP 3857329 B2 JP3857329 B2 JP 3857329B2 JP 01749595 A JP01749595 A JP 01749595A JP 1749595 A JP1749595 A JP 1749595A JP 3857329 B2 JP3857329 B2 JP 3857329B2
Authority
JP
Japan
Prior art keywords
blh
bit line
memory
capacitor
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01749595A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07220467A (ja
Inventor
フオン デア ロツプ トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH07220467A publication Critical patent/JPH07220467A/ja
Application granted granted Critical
Publication of JP3857329B2 publication Critical patent/JP3857329B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Credit Cards Or The Like (AREA)
JP01749595A 1994-01-12 1995-01-09 集積半導体メモリ回路およびその作動方法 Expired - Fee Related JP3857329B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4400698.5 1994-01-12
DE4400698 1994-01-12

Publications (2)

Publication Number Publication Date
JPH07220467A JPH07220467A (ja) 1995-08-18
JP3857329B2 true JP3857329B2 (ja) 2006-12-13

Family

ID=6507777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01749595A Expired - Fee Related JP3857329B2 (ja) 1994-01-12 1995-01-09 集積半導体メモリ回路およびその作動方法

Country Status (6)

Country Link
US (1) US5553027A (de)
EP (1) EP0663666B1 (de)
JP (1) JP3857329B2 (de)
KR (1) KR100334380B1 (de)
AT (1) ATE177245T1 (de)
DE (1) DE59407878D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5754957A (en) * 1996-03-06 1998-05-19 Hughes Electronics Corporation Method for performing a high speed automatic link transfer in a wireless personal communication system
KR100197576B1 (ko) * 1996-10-31 1999-06-15 윤종용 서브 더미 비트라인 및 서브 더미 워드라인을 가지는반도체 메모리 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1523752A (en) * 1974-08-28 1978-09-06 Siemens Ag Dynamic semiconductor data stores
JPS60191499A (ja) * 1984-03-09 1985-09-28 Toshiba Corp ダイナミツク型ランダムアクセスメモリ
JPS60236191A (ja) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
US4658382A (en) * 1984-07-11 1987-04-14 Texas Instruments Incorporated Dynamic memory with improved dummy cell circuitry
US5255235A (en) * 1987-05-15 1993-10-19 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory with dummy word lines connected to bit line potential adjusting capacitors
JPH02301097A (ja) * 1989-05-15 1990-12-13 Toshiba Corp ダイナミック型ランダムアクセスメモリ
JPH0762955B2 (ja) * 1989-05-15 1995-07-05 株式会社東芝 ダイナミック型ランダムアクセスメモリ
JP2573416B2 (ja) * 1990-11-28 1997-01-22 株式会社東芝 半導体記憶装置
KR970000870B1 (ko) * 1992-12-02 1997-01-20 마쯔시다덴기산교 가부시기가이샤 반도체메모리장치

Also Published As

Publication number Publication date
JPH07220467A (ja) 1995-08-18
ATE177245T1 (de) 1999-03-15
US5553027A (en) 1996-09-03
EP0663666A2 (de) 1995-07-19
EP0663666A3 (de) 1995-10-04
DE59407878D1 (de) 1999-04-08
EP0663666B1 (de) 1999-03-03
KR100334380B1 (ko) 2002-09-05
KR950034260A (ko) 1995-12-28
HK1003955A1 (en) 1998-11-13

Similar Documents

Publication Publication Date Title
US7626877B2 (en) Low voltage sense amplifier and sensing method
JP4171201B2 (ja) 半導体記憶装置
EP0398245B1 (de) Direktzugriffsspeicher vom dynamischen Typ
JPH0997496A (ja) 強誘電体メモリ装置及びデータ読出方法
JP2001084799A (ja) 半導体メモリ装置
TW202105382A (zh) 半導體記憶裝置以及操作半導體記憶裝置之方法
US4622655A (en) Semiconductor memory
JPS6044751B2 (ja) 動的半導体メモリ
US8724374B1 (en) Data-dependent pullup transistor supply and body bias voltage application for a static random access memory (SRAM) cell
US12080340B2 (en) Control circuit, method for reading and writing and memory
JPS586585A (ja) メモリ・アレイ
JP5108206B2 (ja) 低電圧用半導体メモリ装置
JP3857330B2 (ja) 集積半導体メモリ回路およびその作動方法
US6067264A (en) High speed semiconductor memory device
JPH04219689A (ja) 半導体記憶装置およびその読出方法
JP2000182374A (ja) ダイナミック型半導体メモリ
JP2006324007A (ja) Ｄｒａｍアレイ用ビット線プリチャージ手法
KR19990053722A (ko) 강유전체 메모리 장치의 기준전압발생기
JP3277192B2 (ja) 半導体装置
KR100649351B1 (ko) 저전압용 반도체 메모리 장치
KR100876900B1 (ko) 센스 앰프와 그의 구동 방법
US9412422B2 (en) Memory device and method for putting a memory cell into a state with a reduced leakage current consumption
US20100172198A1 (en) Data storage element sensing device
KR20020011968A (ko) 메모리 셀 및 기준 셀로 구성된 집적 메모리 및 상응하는동작 방법
JPH07220467A (ja) 集積半導体メモリ回路およびその作動方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040915

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041014

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050908

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051207

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060622

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060817

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060914

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees