JP4108748B2 - コールドウォール気相成長法 - Google Patents
コールドウォール気相成長法Info
- Publication number
- JP4108748B2 JP4108748B2 JP50933797A JP50933797A JP4108748B2 JP 4108748 B2 JP4108748 B2 JP 4108748B2 JP 50933797 A JP50933797 A JP 50933797A JP 50933797 A JP50933797 A JP 50933797A JP 4108748 B2 JP4108748 B2 JP 4108748B2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- wafer
- plate
- gas
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US517,045 | 1995-08-18 | ||
| US08/517,045 US5551985A (en) | 1995-08-18 | 1995-08-18 | Method and apparatus for cold wall chemical vapor deposition |
| PCT/US1996/012768 WO1997007259A1 (en) | 1995-08-18 | 1996-08-14 | Method and apparatus for cold wall chemical vapor deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11511207A JPH11511207A (ja) | 1999-09-28 |
| JPH11511207A5 JPH11511207A5 (2) | 2004-07-15 |
| JP4108748B2 true JP4108748B2 (ja) | 2008-06-25 |
Family
ID=24058153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50933797A Expired - Fee Related JP4108748B2 (ja) | 1995-08-18 | 1996-08-14 | コールドウォール気相成長法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5551985A (2) |
| EP (1) | EP0850323B1 (2) |
| JP (1) | JP4108748B2 (2) |
| KR (1) | KR100400488B1 (2) |
| AU (1) | AU6843096A (2) |
| DE (1) | DE69634539T2 (2) |
| WO (1) | WO1997007259A1 (2) |
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| JPH04243122A (ja) * | 1991-01-18 | 1992-08-31 | Fujitsu Ltd | 化学気相成長装置 |
| US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
| JPH0513355A (ja) * | 1991-07-05 | 1993-01-22 | Hitachi Ltd | ランプアニール装置 |
| US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
| KR100241290B1 (ko) * | 1992-07-09 | 2000-03-02 | 야마시타 히데나리 | 반도체 처리장치 |
| DE4306398A1 (de) * | 1993-03-02 | 1994-09-08 | Leybold Ag | Vorrichtung zum Erwärmen eines Substrates |
| US5305417A (en) * | 1993-03-26 | 1994-04-19 | Texas Instruments Incorporated | Apparatus and method for determining wafer temperature using pyrometry |
| JP3380988B2 (ja) * | 1993-04-21 | 2003-02-24 | 東京エレクトロン株式会社 | 熱処理装置 |
| US5444815A (en) * | 1993-12-16 | 1995-08-22 | Texas Instruments Incorporated | Multi-zone lamp interference correction system |
-
1995
- 1995-08-18 US US08/517,045 patent/US5551985A/en not_active Ceased
-
1996
- 1996-08-14 DE DE69634539T patent/DE69634539T2/de not_active Expired - Fee Related
- 1996-08-14 EP EP96928810A patent/EP0850323B1/en not_active Expired - Lifetime
- 1996-08-14 AU AU68430/96A patent/AU6843096A/en not_active Abandoned
- 1996-08-14 KR KR10-1998-0701159A patent/KR100400488B1/ko not_active Expired - Fee Related
- 1996-08-14 JP JP50933797A patent/JP4108748B2/ja not_active Expired - Fee Related
- 1996-08-14 WO PCT/US1996/012768 patent/WO1997007259A1/en not_active Ceased
-
1998
- 1998-09-03 US US09/148,153 patent/USRE36957E/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11511207A (ja) | 1999-09-28 |
| KR19990037680A (ko) | 1999-05-25 |
| WO1997007259A1 (en) | 1997-02-27 |
| EP0850323B1 (en) | 2005-03-30 |
| USRE36957E (en) | 2000-11-21 |
| KR100400488B1 (ko) | 2003-12-18 |
| EP0850323A4 (en) | 2000-10-18 |
| DE69634539D1 (de) | 2005-05-04 |
| EP0850323A1 (en) | 1998-07-01 |
| US5551985A (en) | 1996-09-03 |
| AU6843096A (en) | 1997-03-12 |
| DE69634539T2 (de) | 2006-03-30 |
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