JPH01102976A - Oxide high temperature superconductor thin film pattern formation method - Google Patents
Oxide high temperature superconductor thin film pattern formation methodInfo
- Publication number
- JPH01102976A JPH01102976A JP62260933A JP26093387A JPH01102976A JP H01102976 A JPH01102976 A JP H01102976A JP 62260933 A JP62260933 A JP 62260933A JP 26093387 A JP26093387 A JP 26093387A JP H01102976 A JPH01102976 A JP H01102976A
- Authority
- JP
- Japan
- Prior art keywords
- high temperature
- thin film
- superconductor thin
- substrate
- temperature superconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000007261 regionalization Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract description 4
- 239000004926 polymethyl methacrylate Substances 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
- 239000000395 magnesium oxide Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000348 titanium sulfate Inorganic materials 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、酸化物高温超伝導体薄膜パターン形成方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for forming an oxide high temperature superconductor thin film pattern.
（従来の技術）
第２図は従来性われている酸化物高温超伝導体薄膜パタ
ーン形成方法を示している。第２図（１）では、基板２
１上にスパッタ法等により酸化物高温超伝導体薄膜２２
を形成する（第２図（１））。(Prior Art) FIG. 2 shows a conventional method for forming an oxide high temperature superconductor thin film pattern. In FIG. 2 (1), the substrate 2
1, an oxide high temperature superconductor thin film 22 is formed by sputtering or the like.
(Fig. 2 (1)).
さらに、レジスト等のマスク２３を光や電子ビーム露光
法により形成する（第２図（２））。次に、マスク２３
を用いて、ドライエツチングにより、酸化物高温超伝導
体２２をエツチングし、パターン転写を行う（第２図（
３））。その後、酸素プラズマによりレジストを除去す
る（第２図４）〉。この様にして、基板２１上に酸化物
高温超伝導体薄膜パターンを形成したのち、熱処理を行
い、超伝導特性をもたせる。Furthermore, a mask 23 made of resist or the like is formed by light or electron beam exposure (FIG. 2 (2)). Next, mask 23
The oxide high-temperature superconductor 22 is etched by dry etching to transfer the pattern (see Fig. 2).
3)). Thereafter, the resist is removed using oxygen plasma (FIG. 2, 4). After forming the oxide high temperature superconductor thin film pattern on the substrate 21 in this manner, heat treatment is performed to impart superconducting properties.
（発明が解決しようとする問題点）
しかしながら、この従来の方法では、工程が複雑である
という欠点を有していた。本発明の目的は、リフトオフ
プロセスを用いることにより、工程が簡素化された酸化
物高温超伝導体薄膜パターン形成方法を提゛供すること
である。(Problems to be Solved by the Invention) However, this conventional method has the disadvantage that the steps are complicated. An object of the present invention is to provide a method for forming an oxide high temperature superconductor thin film pattern in which the process is simplified by using a lift-off process.
（問題点を解決するための手段）
本発明は、基板上に所望のパターンをレジストにより形
成した後、酸化物高温超伝導体材料を蒸着し、リフトオ
フ法により所望の酸化物高温超伝導体薄膜パターンを得
る。その後、熱処理することにより、超伝導体薄膜パタ
ーンを得ることを特徴とする酸化物高温超伝導体薄膜パ
ターン形成方法である。(Means for Solving the Problems) The present invention involves forming a desired pattern on a substrate using a resist, then depositing an oxide high-temperature superconductor material, and forming a desired oxide high-temperature superconductor thin film by a lift-off method. Get the pattern. This is a method for forming an oxide high-temperature superconductor thin film pattern, which is characterized in that a superconductor thin film pattern is obtained by subsequent heat treatment.
（作用）
本発明の原理と作用について述べる。酸化物高温超伝導
体として現在知られている代表的な材料はＹ−Ｂａ−Ｃ
ｕ−０である。この材料はきわめて不安定で他の物質と
反応しやすい。そのために、図２で示した、従来のプロ
セスでは、ドライエツチングのマスク材と反応し、パタ
ーン転写した後の超伝導特性の劣化が見られる。そこで
、リフトオフプロセスを用いることによりマクスの界面
反応の問題が解決される。(Operation) The principle and operation of the present invention will be described. The typical material currently known as an oxide high temperature superconductor is Y-Ba-C.
It is u-0. This material is extremely unstable and easily reacts with other substances. Therefore, in the conventional process shown in FIG. 2, the material reacts with the dry etching mask material, resulting in deterioration of superconducting properties after pattern transfer. Therefore, the problem of Max's interfacial reaction can be solved by using the lift-off process.
（実施例）
以下、本発明の実施例について、第１図を用いて説明す
る。第１図（１）では、基板１１上にレジスト等のマス
ク１２を光や電子、イオンビーム露光法により形成する
（第１図（１１）、ここでは、基板としてマグネシア（
ＭｇＯ＞を用いた。また、レジストとして、ポリメチル
メタクリレイト（ＰＭＭＡ）を用いた。さらに、集束イ
オンビームリソグラフィによりパターニングを行った。(Example) Hereinafter, an example of the present invention will be described using FIG. 1. In FIG. 1 (1), a mask 12 such as a resist is formed on a substrate 11 by light, electron, or ion beam exposure (FIG. 1 (11); here, magnesia (magnesia) is used as a substrate.
MgO> was used. Furthermore, polymethyl methacrylate (PMMA) was used as a resist. Furthermore, patterning was performed using focused ion beam lithography.
次に、イオンビームスパッタ法等の蒸着法により酸化物
高温超伝導体薄膜を蒸着する（第１図（２１）。ここで
は、９０にの転移温度が得られるＹ−Ｂａ−Ｃｕ−０酸
化物高温超伝導材料を用いた。さらに、蒸着法としては
、イオンビームスパッタ法を用いた。次に、アセトン等
の有機溶剤によりレジストマスクを除去し、酸化物高温
超伝導体薄膜パターンをえる（第１図（３）〉。この様
にして、基板１１上に超伝導体薄膜パターンを形成した
後、熱処理を行い、超伝導特性をもたせる。本実施例で
は、基板としてＭｇＯを用いたがチタンサンストロンチ
ウム等の他の基板でもよい。さらに、超伝導体材料とし
て、Ｌａ−Ｙ−Ｂａ−Ｃｕ−０等の他の酸化物高温超伝
導体でもよい。Next, an oxide high temperature superconductor thin film is deposited by a vapor deposition method such as ion beam sputtering (Fig. 1 (21). A high-temperature superconducting material was used.Furthermore, the ion beam sputtering method was used as the vapor deposition method.Next, the resist mask was removed using an organic solvent such as acetone to obtain an oxide high-temperature superconductor thin film pattern. 1 (3)>. After forming a superconductor thin film pattern on the substrate 11 in this way, heat treatment is performed to impart superconducting properties. In this example, MgO was used as the substrate, but titanium sulfate was used as the substrate. Other substrates such as strontium may be used.Furthermore, other oxide high temperature superconductors such as La-Y-Ba-Cu-0 may be used as the superconductor material.
（発明の効果）
以上説明した様に、本発明の超伝導体薄膜パターン形成
方法によれば、基板上にレジストパターンを形成した後
、酸化物高温超伝導体材料を蒸着しリフトオフ法を用い
て、酸化膜高温超伝導体薄膜パターン形成を行うことが
できる。(Effects of the Invention) As explained above, according to the superconductor thin film pattern forming method of the present invention, after forming a resist pattern on a substrate, an oxide high temperature superconductor material is evaporated and a lift-off method is used. , oxide film high temperature superconductor thin film patterning can be performed.
第１図は本発明の一実施例を模敷き的に示す部分断面図
、第２図は従来の酸化物高温超伝導体薄膜パターン形成
方法を示す断面図である。
１１．２１：基板、１２．２３：マスク１３．２３：酸
化物高温超伝導体薄膜FIG. 1 is a partial sectional view schematically showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional method for forming an oxide high temperature superconductor thin film pattern. 11.21: Substrate, 12.23: Mask 13.23: Oxide high temperature superconductor thin film
Claims (1)
、基板上に高温超伝導体材料を蒸着する工程と、上記レ
ジストを除去するリフトオフ法により酸化物高温超伝導
体薄膜パターンを形成させる工程と、続いて熱処理する
工程とより構成されることを特徴とする酸化物高温超伝
導体薄膜パターン形成方法。forming a patterned resist on the substrate; depositing a high temperature superconductor material on the substrate; forming an oxide high temperature superconductor thin film pattern by a lift-off method to remove the resist; A method for forming an oxide high-temperature superconductor thin film pattern, the method comprising: a step of heat-treating the oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260933A JPH01102976A (en) | 1987-10-15 | 1987-10-15 | Oxide high temperature superconductor thin film pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260933A JPH01102976A (en) | 1987-10-15 | 1987-10-15 | Oxide high temperature superconductor thin film pattern formation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01102976A true JPH01102976A (en) | 1989-04-20 |
Family
ID=17354786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62260933A Pending JPH01102976A (en) | 1987-10-15 | 1987-10-15 | Oxide high temperature superconductor thin film pattern formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01102976A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01236663A (en) * | 1988-03-17 | 1989-09-21 | Matsushita Electric Ind Co Ltd | Manufacture of superconducting wiring |
| JPH0354875A (en) * | 1989-07-24 | 1991-03-08 | Furukawa Electric Co Ltd:The | Formation of superconductor circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646582A (en) * | 1979-09-21 | 1981-04-27 | Mitsubishi Electric Corp | Formation of pattern of filmlike article |
| JPS63299193A (en) * | 1987-05-28 | 1988-12-06 | Hitachi Chem Co Ltd | Manufacturing method of superconducting printed circuit board |
-
1987
- 1987-10-15 JP JP62260933A patent/JPH01102976A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5646582A (en) * | 1979-09-21 | 1981-04-27 | Mitsubishi Electric Corp | Formation of pattern of filmlike article |
| JPS63299193A (en) * | 1987-05-28 | 1988-12-06 | Hitachi Chem Co Ltd | Manufacturing method of superconducting printed circuit board |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01236663A (en) * | 1988-03-17 | 1989-09-21 | Matsushita Electric Ind Co Ltd | Manufacture of superconducting wiring |
| JPH0354875A (en) * | 1989-07-24 | 1991-03-08 | Furukawa Electric Co Ltd:The | Formation of superconductor circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL8701718A (en) | METHOD FOR APPLYING THIN LAYERS OF OXIDIC SUPER CONDUCTIVE MATERIAL | |
| JPH01102976A (en) | Oxide high temperature superconductor thin film pattern formation method | |
| US5198412A (en) | Method for making superconductor films | |
| US4266008A (en) | Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits | |
| JPS6455880A (en) | Manufacture of device having superconductive thin film | |
| JP2630459B2 (en) | Pattern formation method | |
| JPH0244784A (en) | Superconductive pattern forming method | |
| JPH06338639A (en) | Manufacture of josephson element | |
| JPH039579A (en) | Oxide superconductive pattern | |
| JPH02253672A (en) | Manufacture of high temperature superconducting thin film circuit | |
| JP2821761B2 (en) | Patterning method for bridge-type grain boundary Josephson device composed of oxide superconducting film | |
| JPH01235287A (en) | Patterning method for high-temperature superconducting thin-film | |
| JPH03235380A (en) | Formation of thin superconducting film pattern | |
| JPH0396286A (en) | Formation of patterned oxide superconducting thin film | |
| JPH05152276A (en) | Manufacture of semiconductor device | |
| JPS6029921B2 (en) | Diffraction grating manufacturing method | |
| JPH04180270A (en) | Microworking of superconductor thin film | |
| JPH02208273A (en) | Method for forming superconducting patterns | |
| JPH0228384A (en) | josephson junction element | |
| JPH01286373A (en) | Josephson element and its manufacturing method | |
| KR930005281A (en) | Method for manufacturing optical waveguide which prevents surface leach of lithium oxide during thermal diffusion | |
| JPH09204036A (en) | Production of phase shift mask | |
| JPH02248082A (en) | Manufacture of josephson junction | |
| JPH01262693A (en) | Method of forming circuit pattern of superconducting thin film | |
| JPH0465398A (en) | Production of superconducting line |