JPS5646582A - Formation of pattern of filmlike article - Google Patents
Formation of pattern of filmlike articleInfo
- Publication number
- JPS5646582A JPS5646582A JP12237579A JP12237579A JPS5646582A JP S5646582 A JPS5646582 A JP S5646582A JP 12237579 A JP12237579 A JP 12237579A JP 12237579 A JP12237579 A JP 12237579A JP S5646582 A JPS5646582 A JP S5646582A
- Authority
- JP
- Japan
- Prior art keywords
- film
- hole
- niobium
- pattern
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Weting (AREA)
Abstract
PURPOSE:To readily obtain a niobium film pattern by employing double film mask of Al and Cr and forming a niobium film only in a hole formed at the mask when forming a niobium film pattern for a Josephson element on a substrate. CONSTITUTION:An Al film 4, a Cr film 5 and a resist film 5 are laminated on a substrate 1 of silicon semiconductor becoming insulator at the operating temperature of the element or insulator such as glass, sapphire or the like. Subsequently, a hole 21 is opened at the film 2, the film 5 of the exposed portion is etched, and a hole 51 having the same size as the hole 21 is formed at the film 5. Thereafter, the exposed film 4 is overetched, and a desired wide hole 41 is opened thereat, the film 2 is removed, niobium film 3 is evaporated on the whole surface, and independent niobium film 31 is formed in the hole 41. Then, the films 4, 5 are removed together with the covered film 3 thereon, and only the film 31 is retained. Thus, the film required for high temperature covering is accurately obtained by a lift-off process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12237579A JPS5646582A (en) | 1979-09-21 | 1979-09-21 | Formation of pattern of filmlike article |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12237579A JPS5646582A (en) | 1979-09-21 | 1979-09-21 | Formation of pattern of filmlike article |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5646582A true JPS5646582A (en) | 1981-04-27 |
Family
ID=14834278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12237579A Pending JPS5646582A (en) | 1979-09-21 | 1979-09-21 | Formation of pattern of filmlike article |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5646582A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63205974A (en) * | 1987-02-23 | 1988-08-25 | Agency Of Ind Science & Technol | Manufacturing method of Josephson junction |
| JPH01102976A (en) * | 1987-10-15 | 1989-04-20 | Nec Corp | Oxide high temperature superconductor thin film pattern formation method |
| CN111403590A (en) * | 2020-04-30 | 2020-07-10 | 合肥本源量子计算科技有限责任公司 | A kind of preparation method of superconducting Josephson junction |
-
1979
- 1979-09-21 JP JP12237579A patent/JPS5646582A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63205974A (en) * | 1987-02-23 | 1988-08-25 | Agency Of Ind Science & Technol | Manufacturing method of Josephson junction |
| JPH01102976A (en) * | 1987-10-15 | 1989-04-20 | Nec Corp | Oxide high temperature superconductor thin film pattern formation method |
| CN111403590A (en) * | 2020-04-30 | 2020-07-10 | 合肥本源量子计算科技有限责任公司 | A kind of preparation method of superconducting Josephson junction |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES8207386A1 (en) | MANUFACTURING PROCEDURE FOR LARGE-SCALE INTEGRATED CIRCUIT DEVICES | |
| JPS6421905A (en) | Manufacture of small-sized superconducting solenoid | |
| JPS57154855A (en) | Manufacture of semiconductor device | |
| JPS5591130A (en) | Production of semiconductor device | |
| JPS57143826A (en) | Formation of resist pattern on gapped semiconductor substrate | |
| JPS5568655A (en) | Manufacturing method of wiring | |
| JPS57145327A (en) | Manufacture of semiconductor device | |
| JPS55163539A (en) | Photo mask | |
| JPS55165637A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5667979A (en) | Preparation method of josephson element | |
| JPS54107277A (en) | Production of semiconductor device | |
| JPS55130140A (en) | Fabricating method of semiconductor device | |
| JPS56138941A (en) | Forming method of wiring layer | |
| JPS5679486A (en) | Method of pattern formation in film body | |
| JPS56130925A (en) | Manufacture of semiconductor device | |
| JPS57201026A (en) | Manufacture of semiconductor device | |
| JPS56130940A (en) | Manufacture of semiconductor device | |
| JPS5667927A (en) | Thin film etching method of electronic parts | |
| JPS5613733A (en) | Forming method for electrode | |
| JPS57102050A (en) | Manufacture of semiconductor device | |
| JPS5646581A (en) | Formation of pattern of niobium film | |
| JPS5673449A (en) | Semiconductor device | |
| JPS5498179A (en) | Preparation of minute circuits and elements | |
| JPS5696845A (en) | Manufacture of semiconductor device | |
| JPS5779633A (en) | Manufacture of semiconductor device |