JPH01146556U - - Google Patents

Info

Publication number
JPH01146556U
JPH01146556U JP4410788U JP4410788U JPH01146556U JP H01146556 U JPH01146556 U JP H01146556U JP 4410788 U JP4410788 U JP 4410788U JP 4410788 U JP4410788 U JP 4410788U JP H01146556 U JPH01146556 U JP H01146556U
Authority
JP
Japan
Prior art keywords
impurity region
type
type impurity
protection diodes
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4410788U
Other languages
English (en)
Other versions
JP2547759Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988044107U priority Critical patent/JP2547759Y2/ja
Publication of JPH01146556U publication Critical patent/JPH01146556U/ja
Application granted granted Critical
Publication of JP2547759Y2 publication Critical patent/JP2547759Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例に係る半導体装置の
要部の平面図、第２図は保護ダイオードを備えた
ＯＲ回路の構成図、第３図、第４図、第５図はそ
れぞれ従来の保護ダイオードを備えた半導体装置
の平面図、その要部の平面図、その断面図である
。 １，２…ゲート電極、３…ソース電極、４，５
…保護ダイオード、４ａ，５ａ…接合面、７，９
…ｎ型不純物領域、８…ｐ型不純物領域である。

Claims (1)

    【実用新案登録請求の範囲】
  1. ゲート電極とソース電極との間に２つのｐｎ型
    保護ダイオードを互いに向きを逆にして直列に設
    け、該保護ダイオードのｎ型不純物領域とｐ型不
    純物領域との接合面を非直線としたことを特徴と
    するＭＥＳ型化合物半導体装置。
JP1988044107U 1988-03-31 1988-03-31 Ｍｅｓ型化合物半導体装置 Expired - Lifetime JP2547759Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988044107U JP2547759Y2 (ja) 1988-03-31 1988-03-31 Ｍｅｓ型化合物半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988044107U JP2547759Y2 (ja) 1988-03-31 1988-03-31 Ｍｅｓ型化合物半導体装置

Publications (2)

Publication Number Publication Date
JPH01146556U true JPH01146556U (ja) 1989-10-09
JP2547759Y2 JP2547759Y2 (ja) 1997-09-17

Family

ID=31270482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988044107U Expired - Lifetime JP2547759Y2 (ja) 1988-03-31 1988-03-31 Ｍｅｓ型化合物半導体装置

Country Status (1)

Country Link
JP (1) JP2547759Y2 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298184A (ja) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd 半導体装置の保護ダイオ−ド

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298184A (ja) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd 半導体装置の保護ダイオ−ド

Also Published As

Publication number Publication date
JP2547759Y2 (ja) 1997-09-17

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