JPS6351433U - - Google Patents
Info
- Publication number
- JPS6351433U JPS6351433U JP14602186U JP14602186U JPS6351433U JP S6351433 U JPS6351433 U JP S6351433U JP 14602186 U JP14602186 U JP 14602186U JP 14602186 U JP14602186 U JP 14602186U JP S6351433 U JPS6351433 U JP S6351433U
- Authority
- JP
- Japan
- Prior art keywords
- type
- impurity diffusion
- type impurity
- diffusion
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Description
第１図は、本考案の一実施例の断面図、第２図
は従来の断面である。 １……Ｐ型不純物拡散領域、２……Ｐ型不純物
拡散領域、３……Ｎ型不純物拡散領域、Ｌ１……
マスクパターン上のＰ型不純物拡散領域の距離、
Ｌ２……マスクパターン上のＰ型不純物拡散領域
の距離、Ｌ０，Ｌ０′……マスクパターン上のＰ
型不純物拡散領域間の距離。
は従来の断面である。 １……Ｐ型不純物拡散領域、２……Ｐ型不純物
拡散領域、３……Ｎ型不純物拡散領域、Ｌ１……
マスクパターン上のＰ型不純物拡散領域の距離、
Ｌ２……マスクパターン上のＰ型不純物拡散領域
の距離、Ｌ０，Ｌ０′……マスクパターン上のＰ
型不純物拡散領域間の距離。
Claims (1)
- ２つのＰ型不純物拡散領域の間に、高濃度のＮ
型不純物拡散を形成し、前記Ｎ型とＰ型の領域が
、拡散の横広がりにより接合を形成することを特
徴とする半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14602186U JPS6351433U (ja) | 1986-09-22 | 1986-09-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14602186U JPS6351433U (ja) | 1986-09-22 | 1986-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6351433U true JPS6351433U (ja) | 1988-04-07 |
Family
ID=31058097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14602186U Pending JPS6351433U (ja) | 1986-09-22 | 1986-09-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351433U (ja) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5386583A (en) * | 1977-01-10 | 1978-07-31 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its production |
-
1986
- 1986-09-22 JP JP14602186U patent/JPS6351433U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5386583A (en) * | 1977-01-10 | 1978-07-31 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its production |