JPH01147271U - - Google Patents

Info

Publication number
JPH01147271U
JPH01147271U JP1988042830U JP4283088U JPH01147271U JP H01147271 U JPH01147271 U JP H01147271U JP 1988042830 U JP1988042830 U JP 1988042830U JP 4283088 U JP4283088 U JP 4283088U JP H01147271 U JPH01147271 U JP H01147271U
Authority
JP
Japan
Prior art keywords
evaporation source
growth chamber
opening
shutter
shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1988042830U
Other languages
English (en)
Other versions
JPH0527501Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988042830U priority Critical patent/JPH0527501Y2/ja
Priority to EP92117113A priority patent/EP0529687B1/en
Priority to DE68926577T priority patent/DE68926577T2/de
Priority to EP89105248A priority patent/EP0335267B1/en
Priority to DE68916457T priority patent/DE68916457T2/de
Priority to TW080105276A priority patent/TW202485B/zh
Priority to US07/329,313 priority patent/US4944246A/en
Priority to CA000594977A priority patent/CA1333038C/en
Priority to KR1019890004152A priority patent/KR930010750B1/ko
Publication of JPH01147271U publication Critical patent/JPH01147271U/ja
Priority to CA000616594A priority patent/CA1333039C/en
Priority to KR1019930013044A priority patent/KR930010751B1/ko
Application granted granted Critical
Publication of JPH0527501Y2 publication Critical patent/JPH0527501Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【図面の簡単な説明】
第１図は本願考案の一実施例を示す断面図、第
２図および第３図は他の実施例の要部説明図、第
４図は従来例の概略構成図である。 ２…成長室、３…基板ホルダ、５…蒸発源、７
…シヤツタ、７ａ…（シヤツタの）軸、７ｂ…シ
ヤツタ板、ａ，ｂ，ｃ…（蒸発源の）軸線、ｄ…
（シヤツタ軸の）軸線。

Claims (1)

  1. 【実用新案登録請求の範囲】 超高真空ポンプにつながる成長室と、この成長
    室の内部に配置した基板ホルダと、成長室の一側
    において軸線が上記基板ホルダを向くように配置
    された複数個の蒸発源と、蒸発源の開口を遮蔽し
    かつ開放するシヤツタとを備える分子線エピタキ
    シー装置において、 上記シヤツタは、上記蒸発源の開口に隣接した
    成長室内壁に回転可能に支持される軸と、この軸
    の先端に閉状態において蒸発源の開口を覆うよう
    に取付けられたシヤツタ板とを備えており、上記
    軸の軸線は、上記蒸発源の軸線に対して成長室内
    において近づくように傾斜させられていることを
    特徴とする、分子線エピタキシー装置。
JP1988042830U 1988-03-30 1988-03-30 Expired - Lifetime JPH0527501Y2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP1988042830U JPH0527501Y2 (ja) 1988-03-30 1988-03-30
EP92117113A EP0529687B1 (en) 1988-03-30 1989-03-23 Molecular beam epitaxy apparatus
DE68926577T DE68926577T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie
EP89105248A EP0335267B1 (en) 1988-03-30 1989-03-23 Molecular beam epitaxy apparatus
DE68916457T DE68916457T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie.
TW080105276A TW202485B (ja) 1988-03-30 1989-03-24
US07/329,313 US4944246A (en) 1988-03-30 1989-03-27 Molecular beam epitaxy apparatus
CA000594977A CA1333038C (en) 1988-03-30 1989-03-29 Molecular beam epitaxy apparatus
KR1019890004152A KR930010750B1 (ko) 1988-03-30 1989-03-30 분자선 에피택시 장치
CA000616594A CA1333039C (en) 1988-03-30 1993-03-30 Molecular beam epitaxy apparatus
KR1019930013044A KR930010751B1 (ko) 1988-03-30 1993-07-09 분자선 에피택시 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988042830U JPH0527501Y2 (ja) 1988-03-30 1988-03-30

Publications (2)

Publication Number Publication Date
JPH01147271U true JPH01147271U (ja) 1989-10-11
JPH0527501Y2 JPH0527501Y2 (ja) 1993-07-13

Family

ID=31269234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988042830U Expired - Lifetime JPH0527501Y2 (ja) 1988-03-30 1988-03-30

Country Status (1)

Country Link
JP (1) JPH0527501Y2 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210615A (ja) * 1985-03-15 1986-09-18 Komatsu Ltd 薄膜形成装置
JPS62141716A (ja) * 1985-12-17 1987-06-25 Agency Of Ind Science & Technol 分子線エピタキシヤル成長装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210615A (ja) * 1985-03-15 1986-09-18 Komatsu Ltd 薄膜形成装置
JPS62141716A (ja) * 1985-12-17 1987-06-25 Agency Of Ind Science & Technol 分子線エピタキシヤル成長装置

Also Published As

Publication number Publication date
JPH0527501Y2 (ja) 1993-07-13

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