JPH01167059U - - Google Patents

Info

Publication number
JPH01167059U
JPH01167059U JP1989057690U JP5769089U JPH01167059U JP H01167059 U JPH01167059 U JP H01167059U JP 1989057690 U JP1989057690 U JP 1989057690U JP 5769089 U JP5769089 U JP 5769089U JP H01167059 U JPH01167059 U JP H01167059U
Authority
JP
Japan
Prior art keywords
conductivity type
low resistance
semiconductor region
semiconductor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989057690U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989057690U priority Critical patent/JPH01167059U/ja
Publication of JPH01167059U publication Critical patent/JPH01167059U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Description

【図面の簡単な説明】
第１図は理想的なタンネツトダイオードの電界
分布を示すグラフ、第２図及び第３図は本考案の
実施例、第４図はミリ波用タンネツトダイオード
のパツケージされた実施例である。

Claims (1)

    【実用新案登録請求の範囲】
  1. 第１導電型の高抵抗―半導体領域上に、前
    記第１導電型の薄い第１低抵抗―半導体領域
    と逆導電型である第２導電型の第２低抵抗―
    半導体領域とを形成し前記第１、第２低抵抗―
    半導体領域間にｐｎ接合を形成する―半導
    体装置であつて、前記第２低抵抗―半導体領
    域上に第２導電型の不純物拡散層を設けたことを
    特徴とする―半導体装置。
JP1989057690U 1989-05-18 1989-05-18 Pending JPH01167059U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989057690U JPH01167059U (ja) 1989-05-18 1989-05-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989057690U JPH01167059U (ja) 1989-05-18 1989-05-18

Publications (1)

Publication Number Publication Date
JPH01167059U true JPH01167059U (ja) 1989-11-22

Family

ID=31283534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989057690U Pending JPH01167059U (ja) 1989-05-18 1989-05-18

Country Status (1)

Country Link
JP (1) JPH01167059U (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56112761A (en) * 1980-02-08 1981-09-05 Semiconductor Res Found Manufacture of 3-5 group element semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56112761A (en) * 1980-02-08 1981-09-05 Semiconductor Res Found Manufacture of 3-5 group element semiconductor device

Similar Documents

Publication Publication Date Title
JPH0365262U (ja)
JPH028152U (ja)
JPS62145348U (ja)
JPS61131857U (ja)
JPS6411557U (ja)
JPS62147363U (ja)
JPH02122455U (ja)
JPS61134057U (ja)
JPH01169048U (ja)
JPH0316328U (ja)
JPS6268252U (ja)
JPS64349U (ja)
JPS6113955U (ja) 集積回路に組込まれるツエナ−ダイオ−ド
JPH0292926U (ja)
JPH0345661U (ja)
JPH0365241U (ja)
JPS63131150U (ja)
JPH02725U (ja)
JPS6390867U (ja)
JPH0158961U (ja)
JPS6397249U (ja)
JPS6343455U (ja)
JPH029452U (ja)
JPS63102257U (ja)
JPS5860951U (ja) 半導体装置