JPH0117249B2 - - Google Patents
Info
- Publication number
- JPH0117249B2 JPH0117249B2 JP54169158A JP16915879A JPH0117249B2 JP H0117249 B2 JPH0117249 B2 JP H0117249B2 JP 54169158 A JP54169158 A JP 54169158A JP 16915879 A JP16915879 A JP 16915879A JP H0117249 B2 JPH0117249 B2 JP H0117249B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- thermal oxide
- resist pattern
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16915879A JPS5693319A (en) | 1979-12-27 | 1979-12-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16915879A JPS5693319A (en) | 1979-12-27 | 1979-12-27 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5693319A JPS5693319A (en) | 1981-07-28 |
| JPH0117249B2 true JPH0117249B2 (2) | 1989-03-29 |
Family
ID=15881349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16915879A Granted JPS5693319A (en) | 1979-12-27 | 1979-12-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5693319A (2) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63124527A (ja) * | 1986-11-14 | 1988-05-28 | Nec Corp | 半導体装置の製造方法 |
| US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54105476A (en) * | 1978-02-06 | 1979-08-18 | Sony Corp | Manufacture of semiconductor device |
-
1979
- 1979-12-27 JP JP16915879A patent/JPS5693319A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5693319A (en) | 1981-07-28 |
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