JPH01201928A - Semiconductor device - Google Patents

Abstract

PURPOSE:To keep a pattern from being damaged and miniaturize the whole body of a device, by causing a semiconductor chip housed in a case to be composed of: a circuit pattern; electrodes which are mounted at the side opposite to the circuit pattern; and conductive parts which are connected to the circuit pattern, thereby mounting the conductive parts in through holes which penetrate into the semiconductor chip through an insulation layer. CONSTITUTION:Electrodes 12 and a circuit pattern hold each position at the side opposite each other on the faces of a chip and through holes 14 are provided by dry etching in a semiconductor chip 11 where transistors are formed in advance on the one side face of the chip. Then, an insulation layer 15 is formed by thermal oxidation and the like in the through holes 14 and further, conductive parts 13 are provided by a vaporization process or a spatter process on the insulation layer 15.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device including a semiconductor chip housed in a case.

[Conventional technology]

Conventionally, this type of semiconductor device has been constructed as shown in FIG. To explain this based on the same figure, in the same figure, what is indicated by reference numeral 1 is a semiconductor chip that is housed in a case 2 and has a circuit pattern (not shown) on one surface;
A lead 3 is connected to the electrode 4 of the semiconductor chip 1 via a wire 5, and a portion thereof is exposed outside the case 2. Further, 6 is a cap that closes the opening of the case 2.

To assemble the semiconductor device configured in this way, the semiconductor chip 1 is housed in the case 2 so that the electrodes 4 are positioned upward, the electrodes 4 of the semiconductor chip 1 are connected to the leads 3, and then the cap 6 is This is done by closing the opening of the case 2.

[Problem to be solved by the invention]

In conventional semiconductor devices, a circuit pattern (not shown) and electrodes 4 are provided on one side of the semiconductor knob 1, so the number of electrodes 4 has increased with the recent trend toward higher integration. Then, it becomes necessary to increase the external dimensions of the chip, resulting in a problem that the device becomes larger. Therefore, it is conceivable to reduce the external dimensions of the electrode 4, but in this case, the wire 5 would be connected across a predetermined connection position and the circuit pattern during wire bonding, which would cause damage to the circuit pattern. was there.

The present invention has been made in view of the above circumstances, and it is an object to provide a semiconductor device that can prevent pattern damage during wire bonding, and can also reduce the size of the entire device.

[Means to solve the problem]

In the semiconductor device according to the present invention, a semiconductor chip housed in a case is constituted by a chip having an electrode provided on the opposite side to the circuit back and a conductive part connected to the electrode and the circuit pattern, and this conductive part is It is provided in a through hole that penetrates a semiconductor chip with an insulating layer interposed therebetween.

[Function] In the present invention, even if the number of electrodes increases, there is no need to set the external dimensions of the semiconductor chip to large dimensions.
Furthermore, when performing wire bonding, wire connections can be made on the side opposite to the circuit pattern.

〔Example〕

EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure. FIG. 1 is a cross-sectional view showing a semiconductor device according to the present invention. In this figure, the same members as in FIG. 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the same figure,
11 is a semiconductor chip having a circuit pattern (not shown) on one side, a number of electrodes 12 provided on the opposite side to the circuit pattern (not shown), and a connection between these electrodes 12 and the circuit. It has a conductive part 13 made of aluminum or the like connected to a pattern (not shown), and is housed inside the case 2. The conductive portion 13 of this semiconductor chip 11 is provided in a through hole 14 penetrating the chip with an insulating layer 15 interposed therebetween.

In the semiconductor device configured in this manner, the electrodes 12 and the circuit pattern (not shown) are located on opposite sides of the chip, so even if the number of electrodes 12 increases, the semiconductor chip It is no longer necessary to set the external dimensions of the wire 11 to a large size, and when performing wire bonding, the wire 5 can be connected on the side opposite to the circuit pattern (not shown).

Next, a method of providing the conductive portion 13 on the semiconductor chip 11 according to the present invention will be explained.

First, a through hole 14 is formed by dry etching in the semiconductor chip 11 on which a transistor (not shown) has been previously formed on one surface. Next, an insulating layer 15 is formed in this through hole 14 by thermal oxidation or the like. Then, a conductive portion 13 is provided on this insulating layer 15 by a Fuji deposition method or a sputtering method.

In this way, the conductive portion 13 can be provided on the semiconductor chip II.

Although this embodiment shows the case where the semiconductor chip 11 has a single wiring layer, the present invention is also applicable to multilayer wiring layers.

Further, in this embodiment, an example is shown in which the present invention is applied to a wire bonding type semiconductor device, but the present invention is not limited thereto, and it goes without saying that the present invention can be applied to a face-down type semiconductor device.

〔Effect of the invention〕

As explained above, according to the present invention, a semiconductor chip housed in a case is constituted by a thousand knobs having an electrode provided on the opposite side to the circuit pattern and a conductive part connected to this electrode and the circuit pattern, Since this conductive part is provided in a through hole that penetrates the semiconductor chip via an insulating layer, there is no need to set the external dimensions of the semiconductor chip to large dimensions even if the number of electrodes increases. Miniaturization can be achieved. In addition, when wire bonding is performed, wires can be connected on the side opposite to the circuit pattern, so unlike conventional wire honting, the wires are connected across the predetermined connection position and the circuit pattern. Therefore, damage to the circuit pattern can be reliably prevented.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing a semiconductor device according to the present invention, and FIG. 2 is a perspective view showing a partial cross-section of a conventional semiconductor device. 2... Case, 3... Lead, 11... Semiconductor chip, 12... Electrode, 13... Conductive part,
14...Through hole, 15...Insulating layer.

Claims (1)

[Claims] In a semiconductor device including a semiconductor chip housed in a case and having a circuit pattern on one surface, and a lead connected to an electrode of the semiconductor chip and a part of which is exposed outside the case, the semiconductor chip is The chip includes an electrode provided on the opposite side of the circuit pattern and a conductive part connected to the electrode and the circuit pattern, and the conductive part is provided in a through hole penetrating the semiconductor chip via an insulating layer. A semiconductor device characterized by: