JPH0125054B2 - - Google Patents
Info
- Publication number
- JPH0125054B2 JPH0125054B2 JP4885281A JP4885281A JPH0125054B2 JP H0125054 B2 JPH0125054 B2 JP H0125054B2 JP 4885281 A JP4885281 A JP 4885281A JP 4885281 A JP4885281 A JP 4885281A JP H0125054 B2 JPH0125054 B2 JP H0125054B2
- Authority
- JP
- Japan
- Prior art keywords
- pmma
- positive
- sensitive material
- perchlorate
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 28
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 28
- 230000005855 radiation Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 claims description 17
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000001235 sensitizing effect Effects 0.000 description 4
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- -1 tetraalkylammonium perchlorates Chemical class 0.000 description 2
- GKWDZIJKKVIQDW-UHFFFAOYSA-N (3,4,4,4-tetrafluoro-2-methylbutan-2-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C(F)C(F)(F)F GKWDZIJKKVIQDW-UHFFFAOYSA-N 0.000 description 1
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OCTBSRAACWKZJN-UHFFFAOYSA-N ethyl acetate;3-methylbutyl acetate Chemical compound CCOC(C)=O.CC(C)CCOC(C)=O OCTBSRAACWKZJN-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- WGHUNMFFLAMBJD-UHFFFAOYSA-M tetraethylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CC[N+](CC)(CC)CC WGHUNMFFLAMBJD-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- 239000008207 working material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
Description
【発明の詳細な説明】
本発明はLSI，Ｖ―LSI等の製造に用いられる
微細パターン形成に適したポジ型放射線感応材料
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a positive radiation-sensitive material suitable for forming fine patterns used in manufacturing LSI, V-LSI, etc.
電子線、Ｘ線、γ線、α線その他イオン線等の
放射線をポジ型放射線感応材料に照射すると、照
射された部分が現像液に可溶となる為にLSIやＶ
―LSI等に於ける微細パターン形式に用いられて
いる事は周知の事である。 When a positive radiation-sensitive material is irradiated with radiation such as an electron beam,
-It is well known that it is used for fine patterning in LSI etc.
ポジ型放射線感応材料として現在知られている
ものは、
１ ポリメチルメタクリレート（PMMA）、
２ メチルメタクリレートとイソブチレンとの共
重合体、
３ メチルメタクリレートとメタクリル酸との共
重合体、
４ ポリエキサフルオロブチルメタクリレート
（FBM）、
５ ポリ１，１―ジメチルテトラフルオロプロピ
ルメタクリレート（FPM）、
６ ポリメチルメタクリルアミド、
７ MPR（商品名）、
８ ポリトリフルオロエチル―α―クロロアクリ
レート（EBR―９）、
９ メチルメタクリレートとｔ―ブチルメタクリ
レートとの共重合体、
10 ポリブデン―１―スルホン（PBS）、
11 ポリメチルイソプロペニルケトン
（PMIPK）、
であるが、何れも感度が不十分である為、放射線
放射量を大きくする必要があり、生産スピードを
制限する欠点を有している。 Currently known positive radiation-sensitive materials are: 1. polymethyl methacrylate (PMMA), 2. copolymer of methyl methacrylate and isobutylene, 3. copolymer of methyl methacrylate and methacrylic acid, 4. polyexafluorobutyl. methacrylate (FBM), 5 poly 1,1-dimethyltetrafluoropropyl methacrylate (FPM), 6 polymethylmethacrylamide, 7 MPR (trade name), 8 polytrifluoroethyl-α-chloroacrylate (EBR-9), 9 A copolymer of methyl methacrylate and t-butyl methacrylate, 10 polybutene-1-sulfone (PBS), and 11 polymethyl isopropenyl ketone (PMIPK). This has the disadvantage of limiting the production speed.
本発明はこのような欠点を改良する事を目的と
しており、感応素材に薬剤を添加配合することに
依り増感された高感度のポジ型放射線感応材料を
提供するものである。 The present invention aims to improve these drawbacks, and provides a highly sensitive positive radiation-sensitive material which is sensitized by adding and blending a drug to the sensitive material.
感応素材、例えばPMMAの電子線に対する感
度は一般に５×10-5c／cm2、又はＸ線に対する感
度は５×10-1J／cm2程度である。この低感度を改
善すべく検討を重ねた結果、テトラｎプロピルア
ンモニウムパークロレート又はテトラｎブチルア
ンモニウムパークロレートを添加すると、増感効
果が見られることを見い出し、高感度のポジ型放
射線感応材料を提供する事が出来た。 The sensitivity of sensitive materials such as PMMA to electron beams is generally about 5×10 −5 c/cm 2 , or the sensitivity to X-rays is about 5×10 −1 J/cm 2 . As a result of repeated studies to improve this low sensitivity, we discovered that a sensitizing effect can be seen when tetra-n-propylammonium perchlorate or tetra-n-butylammonium perchlorate is added, and we provide a highly sensitive positive radiation-sensitive material. I was able to do it.
PMMAとしては重量平均分子（ω）30万以
上、1000万以下のものが用いられる。その理由は
低分子量になると増感剤の効果が失われること、
一方高分子量になるとPMMAの粘度が高くなり、
均一塗布が困難になるからである。数平均分子量
（ｎ）と重量平均分子量（ω）との比、即ち
分子量の分散（ω／ｎ）に就いては、特に留
意の必要はない。 As PMMA, a weight average molecule (ω) of 300,000 or more and 10,000,000 or less is used. The reason is that the effect of the sensitizer is lost when the molecular weight becomes low,
On the other hand, as the molecular weight increases, the viscosity of PMMA increases,
This is because uniform application becomes difficult. There is no need to pay special attention to the ratio between the number average molecular weight (n) and the weight average molecular weight (ω), that is, the molecular weight dispersion (ω/n).
増感剤としてはテトラｎブチルアンモニウムパ
ークロレートが良く、またテトラｎプロピルアン
モニウムも用いられるであろう。この増感剤を
PMMAに対し、１〜25重量％添加する事に依り
PMMAの感度を向上させる事が出来る。PMMA
に対するテトラｎブチルアンモニウムパークロレ
ートの添加量と露光感度との関係を第１図に示
す。この図からも明らかな如く、テトラｎブチル
アンモニウムパークロレートの添加量を多くする
と増感効果が向上するが、30％以上添加すると、
現像液に対する耐性が劣化し、解像度が悪くなる
現象が見られ、実用的は25％以下が好適である。 Tetra-n-butylammonium perchlorate is a good sensitizer, and tetra-n-propylammonium may also be used. This sensitizer
By adding 1 to 25% by weight to PMMA,
The sensitivity of PMMA can be improved. PMMA
FIG. 1 shows the relationship between the amount of tetra-n-butylammonium perchlorate added and the exposure sensitivity. As is clear from this figure, increasing the amount of tetra-n-butylammonium perchlorate improves the sensitizing effect, but adding more than 30%
A phenomenon has been observed in which resistance to developer deteriorates and resolution deteriorates, so a practical value of 25% or less is preferred.
テトラｎブチルアンモニウムパークロレートの
他にテトラアルキルアンモニウムパークロレート
のうち容易に入手出来るテトラメチルアンモニウ
ムパークロレート及びテトラエチルアンモニウム
パークロレートについてはPMMAの溶媒に難溶
であつたり、或いは増感効果が殆ど見られず実用
不可であつた。 In addition to tetra-n-butylammonium perchlorate, among the tetraalkylammonium perchlorates, easily available tetramethylammonium perchlorate and tetraethylammonium perchlorate are poorly soluble in the PMMA solvent, or have little sensitizing effect. It was impractical.
然し乍ら本発明の内容からテトラｎペンチルア
ンモニウムパークロレート、テトラｉブチルアン
モニウムパークロレート、テトラｉプロピルアン
モニウムパークロレート等テトラアルキルアンモ
ニウムパークロレートの中にPMMAの増感剤と
なり得る化合物が存在する可能性は十分にある。 However, from the content of the present invention, there is a strong possibility that compounds that can act as sensitizers for PMMA exist among tetraalkylammonium perchlorates such as tetra-n-pentylammonium perchlorate, tetra-i-butylammonium perchlorate, and tetra-i-propylammonium perchlorate. It is in.
本発明に係るポジ型高分子放射線感応材料が高
い感度を発揮する理由は明らかではないが、本発
明者等は次のように考察している。塗布された
PMMAの薄膜内にはテトラｎブチルアンモニウ
ムパークロレートが均一に分散しており、ここに
所望パターンに従つて放射線を照射すると
PMMAは分子量が低下し、そのパターンの潜像
が形成される。これを現像液に浸漬すると、先ず
テトラｎブチルアンモニウムパークロレートが抽
出溶解されて分子レベルに近い微細空孔を持つ
PMMA薄膜が形成される。次いで現像液に依つ
てPMMAが膨潤し、溶解が起るわけであるが、
放射線照射されて低分子化した潜像部は他の初期
分子量を保つたままの未照射部分に比してテトラ
ｎブチルアンモニウムパークロレートの抽出溶解
速度及びPMMAの膨潤溶解速度が早く、現像液
へのPMMAの溶解速度に大きな差異が生じ、高
感度化とγ値の改善が起るものと思われる。 Although the reason why the positive-working polymeric radiation-sensitive material according to the present invention exhibits high sensitivity is not clear, the present inventors have considered the following. coated
Tetra-n-butylammonium perchlorate is uniformly dispersed within the PMMA thin film, and when it is irradiated with radiation according to a desired pattern,
The molecular weight of PMMA decreases and a latent image of the pattern is formed. When this is immersed in a developer, the tetra-n-butylammonium perchlorate is first extracted and dissolved, creating micropores close to the molecular level.
A PMMA thin film is formed. Next, the PMMA swells and dissolves due to the developer.
The latent image area, which has been irradiated to have a lower molecular weight, has a higher rate of extraction and dissolution of tetra-n-butylammonium perchlorate and a faster rate of swelling and dissolution of PMMA than other unirradiated areas that maintain their initial molecular weight, and can be easily transferred to the developer. It is thought that a large difference occurs in the dissolution rate of PMMA, resulting in higher sensitivity and improvement in γ value.
これはテトラｎブチルアンモニウムパークロレ
ートを添加したPMMAと、無添加のPMMAとに
関し、同一放射線量を照射した後のPMMAの分
子量に殆ど有意差が認められないこと、即ち分子
間の橋絡を解くことを表わすＧ値に改善が見られ
ない事からも推測される。 This is because there is almost no significant difference in the molecular weight of PMMA added with tetra-n-butylammonium perchlorate and PMMA without the addition after being irradiated with the same radiation dose. This is also inferred from the fact that there is no improvement in the G value, which indicates this.
このような理由から、現像液に抽出された極微
細な空孔をPMMA等のポジ型放射線感応素材薄
膜に生じさせるものが増感効果を発揮するものと
考えられる。 For these reasons, it is thought that the sensitizing effect is produced by producing ultrafine pores extracted by the developer in a thin film of a positive radiation-sensitive material such as PMMA.
次に本発明の具体的実施例について説明する。
重量平均分子（ω）450万のPMMAと該
PMMAの15重量％に相当するテトラｎブチルア
ンモニウムパークロレートをメチルエチルケトン
に溶解してポジ型放射線感応材料溶液を調製し、
この溶液をクロム蒸着層を有するガラス板上に回
転塗布してから160〜200℃のプリベーク処理し膜
厚0.5μのポジ型放射線感応材料薄膜を設け、引き
続いてこの薄膜に所望形状の電子線を20KVで照
射し、酢酸エチル―酢酸イソアミル系の現像液で
現像したところ、照射量８×10-7C／cm2で鮮明な
ポジ像が得られた。この実施例に於ける電子線露
光量と規格化膜厚との関係は第２図の曲線Ａで示
されている。 Next, specific examples of the present invention will be described.
PMMA with a weight average molecular (ω) of 4.5 million and
A positive radiation-sensitive material solution is prepared by dissolving tetra-n-butylammonium perchlorate corresponding to 15% by weight of PMMA in methyl ethyl ketone,
This solution is spin-coated onto a glass plate having a chromium vapor deposited layer, and then prebaked at 160-200°C to form a thin film of positive radiation-sensitive material with a thickness of 0.5 μm.Subsequently, this thin film is exposed to an electron beam in the desired shape. When irradiated at 20 KV and developed with an ethyl acetate-isoamyl acetate developer, a clear positive image was obtained at an irradiation dose of 8×10 -7 C/cm 2 . The relationship between the electron beam exposure amount and the normalized film thickness in this example is shown by curve A in FIG.
参考までに対比例を次に記す。重量平均分子量
（ω）450万のPMMAをメチルエチルケトンに
溶解して基板に回転塗布、プリベークし、0.5μの
薄膜を得、先の実施例と同様に電子線露光し現像
したところ、４×10-5C／cm2で鮮明なポジ像が得
られた。この時の感度曲線を第２図Ｂに示す。こ
の第２図からも明らかな如く、PMMAにテトラ
ｎブチルアンモニウムパークロレートを添加する
事に依つて感度が２桁近く良くなつており、また
γ値の改善もみられる。 A comparative example is shown below for reference. PMMA with a weight average molecular weight (ω) of 4.5 million was dissolved in methyl ethyl ketone, spin-coated onto a substrate, prebaked to obtain a 0.5μ thin film, exposed to electron beam and developed in the same manner as in the previous example, and found to be 4×10 - A clear positive image was obtained at 5 C/cm 2 . The sensitivity curve at this time is shown in FIG. 2B. As is clear from FIG. 2, the addition of tetra-n-butylammonium perchlorate to PMMA improves the sensitivity by nearly two orders of magnitude, and also improves the γ value.
本発明は以上の発明から明らかな如く、ポジ型
高分子放射線感応素材にテトラアルキルアンモニ
ウムパークロレートを増感剤として添加している
ので、高感度のポジ型感応材料が得られ、放射線
の露光量が少くて済み、従つて露光時間を短縮す
る事が可能となつて生産スピードを高める事が出
来る。 As is clear from the above invention, since the present invention adds tetraalkylammonium perchlorate as a sensitizer to a positive-working polymeric radiation-sensitive material, a highly sensitive positive-working material can be obtained, and the amount of radiation exposure Therefore, the exposure time can be shortened and the production speed can be increased.
尚、本発明はPMMAに限る事なくそれ以外の
ポジ型高分子放射線感応素材にも応用し得る事は
云うまでもない事であり、また電子線以外にも例
えばＸ線、γ線、イオン線等に対しても有効であ
る。 It goes without saying that the present invention is not limited to PMMA and can be applied to other positive-type polymer radiation-sensitive materials. It is also effective for
第１図はPMMAに対するテトラｎブチルアン
モニウムパークロレートの添加量と露光感度との
関係曲線図、第２図は電子線露光量と規格化膜厚
との関係曲線図、である。
FIG. 1 is a relationship curve between the amount of tetra-n-butylammonium perchlorate added to PMMA and exposure sensitivity, and FIG. 2 is a relationship curve between electron beam exposure and normalized film thickness.
Claims (1)
ルアンモニウムパークロレートを増感剤として添
加して成るポジ型高分子放射線感応材料。 ２ 上記ポジ型高分子放射線感応素材として
PMMAを用いる事を特徴とする特許請求の範囲
第１項記載のポジ型高分子放射線感応材料。 ３ 上記テトラアルキルアンモニウムパークロレ
ートとしてテトラブチルアンモニウムパークロレ
ートを用いる事を特徴とした特許請求の範囲第１
項記載のポジ型高分子放射線感応材料。 ４ 上記テトラブチルアンモニウムパークロレー
トとしてテトラｎブチルアンモニウムパークロレ
ートを用いる事を特徴とした特許請求の範囲第３
項記載のポジ型高分子放射線感応材料。 ５ 上記ポジ型高分子放射線感応素材として
PMMAを用い、また上記テトラアルキルアンモ
ニウムパークロレートとしてテトラブチルアンモ
ニウムパークロレートを用いると共にこのテトラ
ブチルアンモニウムパークロレートの添加量は
PMMAに対して重量比で略１％〜25％である事
を特徴とした特許請求の範囲第１項、第２項又は
第３項記載のポジ型高分子放射線感応材料。[Claims] 1. A positive-working polymeric radiation-sensitive material, which is obtained by adding tetraalkylammonium perchlorate as a sensitizer to a positive-working polymeric radiation-sensitive material. 2 As the above positive polymer radiation sensitive material
The positive-working polymeric radiation-sensitive material according to claim 1, characterized in that PMMA is used. 3 Claim 1, characterized in that tetrabutylammonium perchlorate is used as the tetraalkylammonium perchlorate.
Positive-type polymeric radiation-sensitive material described in . 4 Claim 3, characterized in that tetra-n-butylammonium perchlorate is used as the tetrabutylammonium perchlorate.
Positive-type polymeric radiation-sensitive material described in . 5 As the above positive polymer radiation sensitive material
PMMA is used, and tetrabutylammonium perchlorate is used as the above-mentioned tetraalkylammonium perchlorate, and the amount of tetrabutylammonium perchlorate added is
The positive-working polymeric radiation-sensitive material according to claim 1, 2, or 3, characterized in that the weight ratio of PMMA is approximately 1% to 25%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4885281A JPS57163233A (en) | 1981-03-31 | 1981-03-31 | Radiation sensitive positive type polymer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4885281A JPS57163233A (en) | 1981-03-31 | 1981-03-31 | Radiation sensitive positive type polymer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57163233A JPS57163233A (en) | 1982-10-07 |
| JPH0125054B2 true JPH0125054B2 (en) | 1989-05-16 |
Family
ID=12814790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4885281A Granted JPS57163233A (en) | 1981-03-31 | 1981-03-31 | Radiation sensitive positive type polymer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57163233A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0197950A (en) * | 1986-09-01 | 1989-04-17 | Sanyo Electric Co Ltd | Polymeric radiation sensitive material |
| JP2600897B2 (en) * | 1989-04-03 | 1997-04-16 | 凸版印刷株式会社 | Positive resist composition and pattern forming method |
-
1981
- 1981-03-31 JP JP4885281A patent/JPS57163233A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57163233A (en) | 1982-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2586692B2 (en) | Pattern forming material and pattern forming method | |
| JP2005514659A5 (en) | ||
| JP2000298345A5 (en) | ||
| JPS587054B2 (en) | Resist pattern formation method | |
| JPH0125055B2 (en) | ||
| TWI307451B (en) | Photoresist composition | |
| JPS6037548A (en) | Plasma developable negative resist compound for electron beam, x ray and optical lithography and manufacture thereof | |
| JPH0571605B2 (en) | ||
| JPS5882241A (en) | Positive type radiation sensitive material | |
| JPH09134015A (en) | Pattern forming material, pattern forming method and semiconductor element manufacturing method | |
| JPS58179836A (en) | Positive type photoresist | |
| JPS6314342B2 (en) | ||
| JPH0330852B2 (en) | ||
| JPH0547098B2 (en) | ||
| US3631514A (en) | Recording film having removable antistatic layer | |
| JPH0356469B2 (en) | ||
| JPH0377986B2 (en) | ||
| JPH08234434A (en) | Chemically amplified negative resist | |
| JPS60254041A (en) | Formation of pattern | |
| JPH0160812B2 (en) | ||
| DE2446108C2 (en) | Recording material with a radiation-sensitive layer which contains tellurium halide, a sensitizer and a matrix material which is solid at room temperature | |
| JPS60179737A (en) | Positive type resist material | |
| JPH052980B2 (en) | ||
| JPS63273856A (en) | Resist pattern forming method | |
| JPH054664B2 (en) |