JPH01321656A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH01321656A
JPH01321656A JP63156225A JP15622588A JPH01321656A JP H01321656 A JPH01321656 A JP H01321656A JP 63156225 A JP63156225 A JP 63156225A JP 15622588 A JP15622588 A JP 15622588A JP H01321656 A JPH01321656 A JP H01321656A
Authority
JP
Japan
Prior art keywords
wiring
layer
dissolved
tisi2
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63156225A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587178B2 (2
Inventor
Hideo Takagi
英雄 高木
Noriyuki Suzuki
範之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63156225A priority Critical patent/JPH01321656A/ja
Priority to EP19890111073 priority patent/EP0347792A3/en
Priority to KR8908624A priority patent/KR930001543B1/ko
Publication of JPH01321656A publication Critical patent/JPH01321656A/ja
Priority to US07/565,866 priority patent/US5072282A/en
Publication of JPH0587178B2 publication Critical patent/JPH0587178B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP63156225A 1988-06-23 1988-06-23 半導体装置 Granted JPH01321656A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63156225A JPH01321656A (ja) 1988-06-23 1988-06-23 半導体装置
EP19890111073 EP0347792A3 (en) 1988-06-23 1989-06-19 Multi-layer wirings on a semiconductor device and fabrication method
KR8908624A KR930001543B1 (en) 1988-06-23 1989-06-22 Multilayer wiring and manufacturing method of semiconductor device
US07/565,866 US5072282A (en) 1988-06-23 1990-08-10 Multi-layer wirings on a semiconductor device and fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63156225A JPH01321656A (ja) 1988-06-23 1988-06-23 半導体装置

Publications (2)

Publication Number Publication Date
JPH01321656A true JPH01321656A (ja) 1989-12-27
JPH0587178B2 JPH0587178B2 (2) 1993-12-15

Family

ID=15623095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63156225A Granted JPH01321656A (ja) 1988-06-23 1988-06-23 半導体装置

Country Status (4)

Country Link
US (1) US5072282A (2)
EP (1) EP0347792A3 (2)
JP (1) JPH01321656A (2)
KR (1) KR930001543B1 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646070A (en) * 1990-12-19 1997-07-08 Philips Electronics North American Corporation Method of forming conductive region on silicon semiconductor material, and silicon semiconductor device with such region

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073835B2 (ja) * 1990-03-19 1995-01-18 日本プレシジョン・サーキッツ株式会社 半導体装置
KR940006689B1 (ko) * 1991-10-21 1994-07-25 삼성전자 주식회사 반도체장치의 접촉창 형성방법
GB2276491A (en) * 1993-03-26 1994-09-28 Lucas Ind Plc Multilayered connections for intergrated circuits
WO1997040528A1 (fr) * 1996-04-19 1997-10-30 Matsushita Electronics Corporation Dispositif pour semi-conducteur
KR100346843B1 (ko) * 2000-12-07 2002-08-03 삼성전자 주식회사 층간절연막 형성 방법 및 이를 이용한 반도체 소자의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3123348A1 (de) * 1980-06-19 1982-03-18 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleiterbaustein und verfahren zu dessen herstellung
JPS5745967A (en) * 1980-09-04 1982-03-16 Toshiba Corp Semiconductor device
US4436582A (en) * 1980-10-28 1984-03-13 Saxena Arjun N Multilevel metallization process for integrated circuits
JPS61166075A (ja) * 1985-01-17 1986-07-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS61206243A (ja) * 1985-03-08 1986-09-12 Mitsubishi Electric Corp 高融点金属電極・配線膜を用いた半導体装置
US4723197A (en) * 1985-12-16 1988-02-02 National Semiconductor Corporation Bonding pad interconnection structure
JPS6358943A (ja) * 1986-08-29 1988-03-14 Mitsubishi Electric Corp 電極・配線膜の構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646070A (en) * 1990-12-19 1997-07-08 Philips Electronics North American Corporation Method of forming conductive region on silicon semiconductor material, and silicon semiconductor device with such region

Also Published As

Publication number Publication date
EP0347792A3 (en) 1990-12-05
EP0347792A2 (en) 1989-12-27
KR930001543B1 (en) 1993-03-04
JPH0587178B2 (2) 1993-12-15
US5072282A (en) 1991-12-10

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