JPH0140438B2 - - Google Patents

Info

Publication number
JPH0140438B2
JPH0140438B2 JP58119211A JP11921183A JPH0140438B2 JP H0140438 B2 JPH0140438 B2 JP H0140438B2 JP 58119211 A JP58119211 A JP 58119211A JP 11921183 A JP11921183 A JP 11921183A JP H0140438 B2 JPH0140438 B2 JP H0140438B2
Authority
JP
Japan
Prior art keywords
voltage
bit line
transistor
switch transistor
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58119211A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6010497A (ja
Inventor
Shuichi Ooya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58119211A priority Critical patent/JPS6010497A/ja
Publication of JPS6010497A publication Critical patent/JPS6010497A/ja
Publication of JPH0140438B2 publication Critical patent/JPH0140438B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP58119211A 1983-06-29 1983-06-29 不揮発性半導体メモリ装置 Granted JPS6010497A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119211A JPS6010497A (ja) 1983-06-29 1983-06-29 不揮発性半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119211A JPS6010497A (ja) 1983-06-29 1983-06-29 不揮発性半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS6010497A JPS6010497A (ja) 1985-01-19
JPH0140438B2 true JPH0140438B2 (da) 1989-08-29

Family

ID=14755684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119211A Granted JPS6010497A (ja) 1983-06-29 1983-06-29 不揮発性半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS6010497A (da)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2604555B1 (fr) * 1986-09-30 1988-11-10 Eurotechnique Sa Circuit integre du type circuit logique comportant une memoire non volatile programmable electriquement
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
EP0549795B1 (en) * 1990-09-17 1999-04-14 Kabushiki Kaisha Toshiba Semiconductor storing device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693A (en) * 1979-06-15 1981-01-06 Nec Corp Write-in circuit for non-volatile semiconductor memory

Also Published As

Publication number Publication date
JPS6010497A (ja) 1985-01-19

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