JPH0158962U - - Google Patents

Info

Publication number
JPH0158962U
JPH0158962U JP15288187U JP15288187U JPH0158962U JP H0158962 U JPH0158962 U JP H0158962U JP 15288187 U JP15288187 U JP 15288187U JP 15288187 U JP15288187 U JP 15288187U JP H0158962 U JPH0158962 U JP H0158962U
Authority
JP
Japan
Prior art keywords
conductivity type
semiconductor portion
photovoltaic device
semiconductor
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15288187U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15288187U priority Critical patent/JPH0158962U/ja
Publication of JPH0158962U publication Critical patent/JPH0158962U/ja
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第1図は本考案光起電力装置の第1実施例を示
す模式的断面図、第2図は第2実施例を示す模式
的断面図、第3図は第1・第2実施例及び比較例
の入射光スペクトルに対する収集効率を示す特性
図である。 1,6…受光面電極、2…n型半導体部分、3
…p型結晶半導体部分、4,9…背面電極、7…
p型半導体部分、8…n型結晶半導体部分。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 一導電型の結晶半導体部分と、少なくとも
    1種類の成分薄層が逆導電型の非晶質半導体であ
    る組成の異なつた複数種類の成分薄層を周期的に
    多数回積層し、全体として逆導電型を呈する半導
    体部分と、を直接接触させると共に、逆導電型半
    導体部分を光入射側に配置したことを特徴とする
    光起電力装置。 (2) 上記一導電型の結晶半導体部分は多結晶半
    導体からなる実用新案登録請求の範囲第1項記載
    の光起電力装置。 (3) 上記逆導電型の結晶半導体部分は単結晶半
    導体からなる実用新案登録請求の範囲第1項記載
    の光起電力装置。
JP15288187U 1987-10-06 1987-10-06 Pending JPH0158962U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15288187U JPH0158962U (ja) 1987-10-06 1987-10-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15288187U JPH0158962U (ja) 1987-10-06 1987-10-06

Publications (1)

Publication Number Publication Date
JPH0158962U true JPH0158962U (ja) 1989-04-13

Family

ID=31428212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15288187U Pending JPH0158962U (ja) 1987-10-06 1987-10-06

Country Status (1)

Country Link
JP (1) JPH0158962U (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823114A (ja) * 1994-07-08 1996-01-23 Hitachi Ltd 太陽電池
JP2014027119A (ja) * 2012-07-27 2014-02-06 Nippon Telegr & Teleph Corp <Ntt> 太陽電池

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823114A (ja) * 1994-07-08 1996-01-23 Hitachi Ltd 太陽電池
JP2014027119A (ja) * 2012-07-27 2014-02-06 Nippon Telegr & Teleph Corp <Ntt> 太陽電池

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