JPH0160551U - - Google Patents
Info
- Publication number
- JPH0160551U JPH0160551U JP15526687U JP15526687U JPH0160551U JP H0160551 U JPH0160551 U JP H0160551U JP 15526687 U JP15526687 U JP 15526687U JP 15526687 U JP15526687 U JP 15526687U JP H0160551 U JPH0160551 U JP H0160551U
- Authority
- JP
- Japan
- Prior art keywords
- hole
- semiconductor device
- terminal pin
- narrowed
- brazing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
第１図はこの考案にかかる半導体装置の１実施
例を表す断面図、第２図はセラミツク基板の１例
を表す斜視図である。
２…セラミツク基板、５…端子ピン、５ａ…端
子ピンつば部、７…スルーホール、７ａ…狭まり
部、８…裏面側ランド、９…メツキ層、１０…ろ
う材、１１…半導体装置。
FIG. 1 is a sectional view showing one embodiment of a semiconductor device according to this invention, and FIG. 2 is a perspective view showing one example of a ceramic substrate. 2... Ceramic substrate, 5... Terminal pin, 5a... Terminal pin flange portion, 7... Through hole, 7a... Narrowed portion, 8... Back side land, 9... Plating layer, 10... Brazing material, 11... Semiconductor device.
Claims (1)
ーホール付近に形成された導体層とろう付により
電気的に接続されている端子ピンを備えた半導体
装置において、前記スルーホールがその内側に径
の狭まり部を有していて、前記端子ピンと接合し
ているろう材が、前記狭まり部よりも奥まで前記
スルーホール内に充填されていて、前記狭まり部
により抜け出るのを阻止されていることを特徴と
する半導体装置。 In a semiconductor device having a terminal pin electrically connected by brazing to a conductor layer formed near the through hole of a ceramic substrate having a through hole, the through hole has a narrowed diameter portion on the inside thereof. A semiconductor device characterized in that the brazing material bonded to the terminal pin is filled into the through hole to a depth deeper than the narrowed portion, and is prevented from coming out by the narrowed portion. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15526687U JPH0160551U (en) | 1987-10-09 | 1987-10-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15526687U JPH0160551U (en) | 1987-10-09 | 1987-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0160551U true JPH0160551U (en) | 1989-04-17 |
Family
ID=31432745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15526687U Pending JPH0160551U (en) | 1987-10-09 | 1987-10-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0160551U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992020097A1 (en) * | 1991-04-26 | 1992-11-12 | Citizen Watch Co., Ltd. | Semiconductor device and manufacturing method therefor |
-
1987
- 1987-10-09 JP JP15526687U patent/JPH0160551U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992020097A1 (en) * | 1991-04-26 | 1992-11-12 | Citizen Watch Co., Ltd. | Semiconductor device and manufacturing method therefor |