JPH0165867U - - Google Patents
Info
- Publication number
- JPH0165867U JPH0165867U JP1987159713U JP15971387U JPH0165867U JP H0165867 U JPH0165867 U JP H0165867U JP 1987159713 U JP1987159713 U JP 1987159713U JP 15971387 U JP15971387 U JP 15971387U JP H0165867 U JPH0165867 U JP H0165867U
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substrate
- liquid phase
- epitaxial growth
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 239000007791 liquid phase Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の液相エピタキシヤル成長装置
の一実施例を示す説明図、第２図は他の実施例を
示す説明図、第３図は従来装置の説明図である。
１……スライドボート、２……基板、４……ス
ライダー、５Ａ，５Ｂ……溶液、６……溶液溜り
、８……溶媒液、９……溶媒液溜り、１０……ダ
ミー基板。
FIG. 1 is an explanatory diagram showing one embodiment of the liquid phase epitaxial growth apparatus of the present invention, FIG. 2 is an explanatory diagram showing another embodiment, and FIG. 3 is an explanatory diagram of a conventional apparatus. 1... Slide boat, 2... Substrate, 4... Slider, 5A, 5B... Solution, 6... Solution pool, 8... Solvent liquid, 9... Solvent liquid pool, 10... Dummy substrate.
Claims (1)
原料の溶液とを入れて両者を接触させ、前記基板
に半導体の結晶を成長させる液相エピタキシヤル
成長装置において、前記溶液を複数個所に具え該
溶液と隣接する個所には前記基板と前記溶液との
接触時に前記基板上に残留する溶液を溶解させる
溶媒液が配置してあることを特徴とする液相エピ
タキシヤル成長装置。 (2) 前記基板の周囲に前記残留溶液を付着させ
るダミー基板を配置するようにした実用新案登録
請求の範囲第１項記載の液相エピタキシヤル成長
装置。[Claims for Utility Model Registration] (1) A liquid phase epitaxial growth device that grows semiconductor crystals on the substrate by placing a substrate and a raw material solution in a sliding liquid phase growth boat and bringing them into contact. In the liquid phase, the solution is provided in a plurality of locations, and a location adjacent to the solution is provided with a solvent solution that dissolves the solution remaining on the substrate when the substrate and the solution come into contact. Epitaxial growth equipment. (2) The liquid phase epitaxial growth apparatus according to claim 1, wherein a dummy substrate to which the residual solution is attached is arranged around the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987159713U JPH0165867U (en) | 1987-10-19 | 1987-10-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987159713U JPH0165867U (en) | 1987-10-19 | 1987-10-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0165867U true JPH0165867U (en) | 1989-04-27 |
Family
ID=31441151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987159713U Pending JPH0165867U (en) | 1987-10-19 | 1987-10-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0165867U (en) |
-
1987
- 1987-10-19 JP JP1987159713U patent/JPH0165867U/ja active Pending
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