JPH02114530A - 薄膜形成装置 - Google Patents

薄膜形成装置

Info

Publication number
JPH02114530A
JPH02114530A JP88268746A JP26874688A JPH02114530A JP H02114530 A JPH02114530 A JP H02114530A JP 88268746 A JP88268746 A JP 88268746A JP 26874688 A JP26874688 A JP 26874688A JP H02114530 A JPH02114530 A JP H02114530A
Authority
JP
Japan
Prior art keywords
substrate
active species
reaction gas
thin film
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP88268746A
Other languages
English (en)
Inventor
Masao Oda
昌雄 織田
Yoshimi Kinoshita
儀美 木之下
Masahiro Hayama
羽山　昌宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP88268746A priority Critical patent/JPH02114530A/ja
Priority to US07/362,745 priority patent/US5010842A/en
Priority to GB8913546A priority patent/GB2226049B/en
Publication of JPH02114530A publication Critical patent/JPH02114530A/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄膜形成装置に関し、特にＣＶ　Ｄ　（Ｃｈｅ
ｉ＋１ｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ）法
により薄膜を形成する装置に関するものである。
〔従来の技術〕
近年、ＬＳ１．　　液晶デイスプレィを含む電子デバイ
スの製造プロセスの低温化に伴い、基板上に薄膜を形成
する方法として、プラズマ分離形マイクロ波プラズマＣ
ＶＤ法が注目されている。プラズマ分離形マイクロ波プ
ラズマＣＶＤ法は、反応室とは分離したプラズマ放電室
でマイクロ波プラズマ放電により反応ガスを励起し、生
成した活性種を反応室内の低温加熱された基板上に輸送
し薄膜を形成する技術である。この技術では基板が直接
プラズマにさらされないため、プラズマ中の荷電粒子が
基板および形成中の薄膜に損傷を与えることなく、シか
も３００°Ｃ以下の低い基板温度で薄膜を形成すること
ができる。
紋 第９図は例えば特潴昭５８−２７１ｉＳＧ号公報に示さ
れた従来のプラズマ分離形マイクロ波プラズマＣＶＤ法
に用いられる薄膜形成装置の構成を示す断面構成図であ
る。図において、１は反応室、２は第１の反応ガス供給
口、３は第１の反応ガス、４は第２の反応ガス、５はマ
イクロ波プラズマ放電管、６はマイクロ波エネルギー　
７は活性種導入口、８は活性種、９は基板、１０は基板
９が載置されるヒーター　１１はガス排気口、１２は反
応後のガスである。
このように構成された薄膜形成装置において、例えばシ
リコン酸化膜を形成する場合、反応ガス供給口２から第
１の反応ガスとしてシランガス３が反応室１内に供給さ
れ、また第２の反応ガスとして酸素原子を含むガス４が
マイクロ波プラズマ放電管５に供給され、これにより生
成される活性化酸素８が活性種導入ロアから反応室１内
に導入される。
この時、活性化酸素８はシランガス３と基板近傍の空間
で化学気相反応を起こし、シリコン原子。
水素原子、酸素原子を含む前駆体を形成する。この前駆
体が基板９表面で変化し、シリコン酸化膜が形成される
。
〔発明が解決しようとする課題〕
ところが、従来のこの種の薄膜形成装置においては、大
面積基板に均一な膜厚で膜を形成できないという問題点
があった。
この発明は上記のような問題点を解決するためになされ
たもので、プラズマ分離形マイクロ波プラズマＣＶＤ法
により大面積基板に均一な膜厚で薄膜を形成することが
できる薄膜形成装置を得ることを目的とする。
〔課題を解決するための手段〕
この発明にかかる薄膜形成装置は、基板を収容し、該基
板を保持し加熱するヒータ、第１の反応ガスを供給する
反応ガス供給部、及び第２の反応ガスを励起することに
より生成される活性種を供給する活性種供給部を何する
反応室を備え、上記基板上に第１の反応ガスと活性種の
反応により薄膜を形成するものにおいて、第１の反応ガ
ス及び活性種濃度が基板上でそれぞれ均一で、かつ第１
の反応ガス及び活性種が上記基板近傍で混合するように
、基板を覆う平板に活性種吹き出し口を多数設けてなる
活性種供給部と、該活性種供給部と基板間に配設した、
反応ガス吹き出し口を多数有する複数のパイプからなる
反応ガス供給部とを設けたものである。
〔作用〕
この発明の薄膜形成装置においては、第１の反応ガスと
活性種が基板上に均一に供給され混合されるため、第１
の反応ガス、活性種の混合によって生じる化学変化の結
果、薄膜が形成される反応領域内で薄膜形成速度が均一
になり、基板全体に均一に薄膜が形成される。
〔実施例〕
以下この発明の一実施例を図について説明する。
第１図はこの発明の一実施例による薄膜形成装置の内部
を示す斜視図であり、第２図はその第１図における入方
向から見た断面構成図、第３図はその第１図におけるＢ
方向から見た断面構成図である。第４図は活性種供給部
の内部を示す断面斜視図であり、第５図は反応ガス供給
部の斜視図である。第６図は活性種供給部の活性種吹き
出し口と反応ガス供給部の位置関係図である。
図において、活性種供給部は活性種吹き出し口１４が多
数設けられた２枚の石英板Ｌ３ａ、１３ｂ１　　この石
英板１３ａ、１３ｂを固定するテフロン製スペーサ１９
、及び活性種供給部の外壁１５から構成されている。ま
た、１８は活性化酸素８の反応室１内壁での失活を防止
するための石英製失活防止板である。１６は第１の反応
ガス３、この場合はシランガスを反応ガス吹き出しロア
７から吹き出し基板９上に供給する反応ガス供給部であ
る。
活性種供給部は石英板１３ａと１３ｂが基板全面を覆い
、かつ基板９と平行になるよう設けられている。反応ガ
ス供給部は第５図に示すように、第１の反応ガス供給口
２ａ、２ｂより供給される第１の反応ガス３を均等に分
配する貯気部２１ａ。
２１ｂと多数の反応ガス吹き出し口１７を有する複数の
両端開放のパイプ２０ａとが連結された構造となってお
り、複数のパイプ２０ａが基板全面を覆い、かつ基板９
と平行になるよう活性種供給部と基板間に配設される。
第６図に示すように複数のパイプ２０ａは石英板１３ｂ
の活性種吹き出し口１４間の下方位置に配設されており
、活性種の基板上への輸送を妨げるものではない。また
石英板１３ｂの活性種吹き出し口１４間の上方位置に活
性種吹き出し口１４を有する石英板１３ａを活性種導入
ロアと石英板１３ｂの間に設け、活性種の基板上への均
一な供給ができる構造となっている。また反応ガス吹き
出し口１７を十分小さくすることにより第１の反応ガス
３の基板上への均一な供給ができる。
この実施例の薄膜形成装置においては、基板９に対し膜
を形成するには従来装置と同様に反応ガス吹き出し口１
７から第１の反応ガスとしてシランガス３が基板９上に
供給され、また第２の反応ガスとして酸素原子を含むガ
ス４がマイクロ波プラズマ放電管５に供給され、これに
より生成される活性化酸素８が活性種吹き出し口１４か
ら基板９上に導入されて活性化酸素８とシランガス３が
基板近傍の空間で化学気相反応を起こし、基板９表面で
シリコン酸化膜の形成を行うのであるが、シランガス３
は貯気部２１ａと２１ｂで複数の両端開放のパイプ２０
ａに分配され、さらに多数の反応ガス吹き出し口１７か
ら均等に基板９上に供給され、また活性化酸素８は２枚
の石英板１３ａと１３ｂを通ることにより活性種吹き出
し口１４から均等に基板９上に供給される。したがって
基板上での反応ガス及び活性８１濃度が一様となり、基
板全面に均一に薄膜を形成することができる。
この薄膜形成装置においては、基板のサイズに応じて石
英板１３ａ、１３ｂを拡大し、パイプ２０ａの本数を増
やすことにより処理基板の大型化に対応できる。
なお、上記実施例では活性種供給部は円筒形のものにつ
いて示したが、これは第７図の本発明の他の実施例に示
すように直方体状としてもよく、互に逆向きに連結した
構造としてもよい。
〔発明の効果〕
以上のようにこの発明によれば、基板を収容し、該基板
を保持し加熱するヒータ、第１の反応ガスを供給する反
応ガス供給部、及び第２の反応ガスを励起することによ
り生成される活性種を供給する活性種供給部ををする反
応室を備え、上記基板上に第１反応ガスと活性種の反応
により薄膜を形成するものにおいて、第１の反応ガス及
び活性種濃度が基板上でそれぞれ均一となり、かつ第１
の反応ガス及び活性種が上記基板近傍で混合するように
、基板全体を覆う平板に活性種吹き出し口を多数設けて
活性種供給部を構成し、上記活性種供給部と基板間に反
応ガス吹き出し口を多数有する複数のパイプからなる反
応ガス供給部を配設するようにしたので、基板上での反
応ガス及び活性種濃度が一様となり、大型基板にも全面
に均一に薄膜を形成することができる効果がある。
【図面の簡単な説明】
第１図はこの発明の一実施例による薄膜形成装置の内部
を示す斜視図、第２図はその断面構成図、第３図は他の
方向から見た断面構成図、第４図は活性種供給部の内部
を示す断面斜視図、第５図は反応ガス供給部の斜視図、
第６図は活性種供給部の活性種吹き出し口と反応ガス供
給部の位置関係図、第７図は本発明の他の実施例の活性
種供給部の内部を示す断面斜視図、第８図は本発明の他
の実施例の反応ガス供給部の斜視図、第９図は従来の薄
膜形成装置を示す図である。 図において、１は反応室、３は第１の反応ガス、４は第
２の反応ガス、８は活性種、９は基板、１０は基板９が
載置されるヒータ、１４は活性種吹き出し口、１７は反
応ガス吹き出し口、２０はパイプである。

Claims (1)

  1. 【特許請求の範囲】 １）基板を収容し、上記基板を保持し加熱するヒータ、
    第１の反応ガスを供給する反応ガス供給部、及び第２の
    反応ガスを励起することにより生成される活性種を供給
    する活性種供給部を有する反応室を備え、 上記基板上に第１の反応ガスと上記活性種の反応により
    薄膜を形成する薄膜形成装置において、上記活性種供給
    部は、上記第１の反応ガス及び活性種の濃度が基板上で
    それぞれ均一となり、かつ第１の反応ガス及び活性種が
    上記基板近傍で混合するように、基板を覆う平板に活性
    種吹き出し口を多数設けてなり、 上記反応ガス供給部は、該活性種供給部と基板との間に
    配設した、反応ガス吹き出し口を多数有する複数のパイ
    プからなるものであることを特徴とする薄膜形成装置。
JP88268746A 1988-10-25 1988-10-24 薄膜形成装置 Pending JPH02114530A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP88268746A JPH02114530A (ja) 1988-10-25 1988-10-24 薄膜形成装置
US07/362,745 US5010842A (en) 1988-10-25 1989-06-07 Apparatus for forming thin film
GB8913546A GB2226049B (en) 1988-10-25 1989-06-13 Apparatus for forming thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP88268746A JPH02114530A (ja) 1988-10-25 1988-10-24 薄膜形成装置

Publications (1)

Publication Number Publication Date
JPH02114530A true JPH02114530A (ja) 1990-04-26

Family

ID=17462762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP88268746A Pending JPH02114530A (ja) 1988-10-25 1988-10-24 薄膜形成装置

Country Status (3)

Country Link
US (1) US5010842A (ja)
JP (1) JPH02114530A (ja)
GB (1) GB2226049B (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2691035A1 (fr) * 1992-05-07 1993-11-12 France Telecom Dispositif et machine à plasma de traitement chimique et procédé utilisant ce dispositif.
JPH07111248A (ja) * 1993-08-16 1995-04-25 Canon Sales Co Inc 成膜装置
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